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Impact of modal gain and waveguide design on two-state lasing in quantum well-dot lasers. / Maximov, M. V.; Shernyakov, Yu. M.; Kornyshov, G. O.; Beckman, A. A.; Zubov, F. I.; Kharchenko, A. A.; Payusov, A. S.; Mintairov, S. A.; Kalyuzhnyy, N. A.; Dubrovskii, V. G.; Gordeev, N. Yu.

In: Optics Letters, Vol. 49, No. 21, 6213, 28.10.2024.

Research output: Contribution to journal › Article › peer-review

Harvard

Maximov, MV, Shernyakov, YM, Kornyshov, GO, Beckman, AA, Zubov, FI, Kharchenko, AA, Payusov, AS, Mintairov, SA, Kalyuzhnyy, NA, Dubrovskii, VG & Gordeev, NY 2024, 'Impact of modal gain and waveguide design on two-state lasing in quantum well-dot lasers', Optics Letters, vol. 49, no. 21, 6213. https://doi.org/10.1364/ol.532606

APA

Maximov, M. V., Shernyakov, Y. M., Kornyshov, G. O., Beckman, A. A., Zubov, F. I., Kharchenko, A. A., Payusov, A. S., Mintairov, S. A., Kalyuzhnyy, N. A., Dubrovskii, V. G., & Gordeev, N. Y. (2024). Impact of modal gain and waveguide design on two-state lasing in quantum well-dot lasers. Optics Letters, 49(21), [6213]. https://doi.org/10.1364/ol.532606

Vancouver

Maximov MV, Shernyakov YM, Kornyshov GO, Beckman AA, Zubov FI, Kharchenko AA et al. Impact of modal gain and waveguide design on two-state lasing in quantum well-dot lasers. Optics Letters. 2024 Oct 28;49(21). 6213. https://doi.org/10.1364/ol.532606

Author

Maximov, M. V. ; Shernyakov, Yu. M. ; Kornyshov, G. O. ; Beckman, A. A. ; Zubov, F. I. ; Kharchenko, A. A. ; Payusov, A. S. ; Mintairov, S. A. ; Kalyuzhnyy, N. A. ; Dubrovskii, V. G. ; Gordeev, N. Yu. / Impact of modal gain and waveguide design on two-state lasing in quantum well-dot lasers. In: Optics Letters. 2024 ; Vol. 49, No. 21.

BibTeX

@article{107efb1b9ade4444aa0ffa48c308634a,
title = "Impact of modal gain and waveguide design on two-state lasing in quantum well-dot lasers",
abstract = "We study the current-controlled lasing switching from the ground state (GS) to the excited state (ES) transition in broad-area (stripe width 100 µm) InGaAs/GaAs quantum well-dot (QWD) and quantum well (QW) lasers. In the lasers with one QWD layer and a 0.45 µm-thick GaAs waveguide, pure GS lasing takes place up to an injection current as high as 8 A (40 kA/cm 2 ). In contrast, in QW lasers with a similar design, ES lasing emerges already at 3 A (15 kA/cm 2 ). The ES lasing in the QWD lasers is observed only in the devices with a waveguide thickness of 0.78 µm that supports a 2nd order transverse mode at the wavelength of the ES transition. Increasing the modal gain in the lasers with 0.78 µm-thick waveguide by using two QWD layers in the active region suppresses the ES lasing.",
author = "Maximov, {M. V.} and Shernyakov, {Yu. M.} and Kornyshov, {G. O.} and Beckman, {A. A.} and Zubov, {F. I.} and Kharchenko, {A. A.} and Payusov, {A. S.} and Mintairov, {S. A.} and Kalyuzhnyy, {N. A.} and Dubrovskii, {V. G.} and Gordeev, {N. Yu.}",
year = "2024",
month = oct,
day = "28",
doi = "10.1364/ol.532606",
language = "English",
volume = "49",
journal = "Optics Letters",
issn = "0146-9592",
publisher = "American Institute of Physics",
number = "21",

}

RIS

TY - JOUR

T1 - Impact of modal gain and waveguide design on two-state lasing in quantum well-dot lasers

AU - Maximov, M. V.

AU - Shernyakov, Yu. M.

AU - Kornyshov, G. O.

AU - Beckman, A. A.

AU - Zubov, F. I.

AU - Kharchenko, A. A.

AU - Payusov, A. S.

AU - Mintairov, S. A.

AU - Kalyuzhnyy, N. A.

AU - Dubrovskii, V. G.

AU - Gordeev, N. Yu.

PY - 2024/10/28

Y1 - 2024/10/28

N2 - We study the current-controlled lasing switching from the ground state (GS) to the excited state (ES) transition in broad-area (stripe width 100 µm) InGaAs/GaAs quantum well-dot (QWD) and quantum well (QW) lasers. In the lasers with one QWD layer and a 0.45 µm-thick GaAs waveguide, pure GS lasing takes place up to an injection current as high as 8 A (40 kA/cm 2 ). In contrast, in QW lasers with a similar design, ES lasing emerges already at 3 A (15 kA/cm 2 ). The ES lasing in the QWD lasers is observed only in the devices with a waveguide thickness of 0.78 µm that supports a 2nd order transverse mode at the wavelength of the ES transition. Increasing the modal gain in the lasers with 0.78 µm-thick waveguide by using two QWD layers in the active region suppresses the ES lasing.

AB - We study the current-controlled lasing switching from the ground state (GS) to the excited state (ES) transition in broad-area (stripe width 100 µm) InGaAs/GaAs quantum well-dot (QWD) and quantum well (QW) lasers. In the lasers with one QWD layer and a 0.45 µm-thick GaAs waveguide, pure GS lasing takes place up to an injection current as high as 8 A (40 kA/cm 2 ). In contrast, in QW lasers with a similar design, ES lasing emerges already at 3 A (15 kA/cm 2 ). The ES lasing in the QWD lasers is observed only in the devices with a waveguide thickness of 0.78 µm that supports a 2nd order transverse mode at the wavelength of the ES transition. Increasing the modal gain in the lasers with 0.78 µm-thick waveguide by using two QWD layers in the active region suppresses the ES lasing.

UR - https://opg.optica.org/abstract.cfm?URI=ol-49-21-6213

UR - https://www.mendeley.com/catalogue/bfc35fae-49a7-36bc-8966-4529891d3ea3/

U2 - 10.1364/ol.532606

DO - 10.1364/ol.532606

M3 - Article

VL - 49

JO - Optics Letters

JF - Optics Letters

SN - 0146-9592

IS - 21

M1 - 6213

ER -

ID: 127402175