Search
Front page
Activities
Projects
Research output
Persons
Data sets
Organizational units
Press/Media
About
Identification of dislocation-related luminescence participating levels in silicon by DLTS and Pulsed-CL profiling
Research output
:
Contribution to journal
›
Article
›
peer-review
Department of Solid State Electronics
Overview
Cite this
DOI
https://doi.org/DOI: 10.1088/1742-6596/281/1/012008
Other version
A. Bondarenko
O. Vyvenko
I. Isakov
Original language
Undefined
Pages (from-to)
012008
Journal
Journal of Physics: Conference Series
Volume
281
Issue number
1
DOIs
https://doi.org/DOI: 10.1088/1742-6596/281/1/012008
State
Published -
2011
ID: 5297829