In the article, we demonstrate the growth of AlGaAs nanowires on silicon substrates. It is shown that a controlled growth of short GaAs insertions inside AlGaAs nanowires is possible. Optically, such segments shows sharp and intense quantum dot - like emission lines. Our work opens new prospects for integration of direct bandgap semiconductors and single-photon sources on silicon platform for various applications in the fields of silicon photonics and quantum information technology.