TY - JOUR

T1 - High-Speed Performance Self-Powered Shortwave Ultraviolet Radiation Detectors Based on κ(ε)-Ga2O3

AU - Almaev, A.V.

AU - Tsymbalov, Alexander

AU - Kushnarev, Bogdan O.

AU - Nikolaev, Vladimir

AU - Pechnikov, Alexei

AU - Scheglov, Mikhail

AU - Chikiryaka, A. V.

AU - Корусенко, Петр Михайлович

PY - 2024/4/1

Y1 - 2024/4/1

N2 - High-speed solar-blind short wavelength ultraviolet radiation detectors based on κ(ϵ)-Ga2O3 layers with Pt contacts were demonstrated and their properties were studied in detail. The κ(ϵ)-Ga2O3 layers were deposited by the halide vapor phase epitaxy on patterned GaN templates with sapphire substrates. The spectral dependencies of the photoelectric properties of structures were analyzed in the wavelength interval 200-370 nm. The maximum photo to dark current ratio, responsivity, detectivity and external quantum efficiency of structures were determined as: 180.86 arb. un., 3.57 A/W, 1.78 × 1012 Hz0.5∙cm∙W−1 and 2193.6%, respectively, at a wavelength of 200 nm and an applied voltage of 1 V. The enhancement of the photoresponse was caused by the decrease in the Schottky barrier at the Pt/κ(ϵ)−Ga2O3 interface under ultraviolet exposure. The detectors demonstrated could functionalize in self-powered mode due to built-in electric field at the Pt/κ(ϵ)-Ga2O3 interface. The responsivity and external quantum efficiency of the structures at a wavelength of 254 nm and zero applied voltage were 0.9 mA/W and 0.46%, respectively. The rise and decay times in self-powered mode did not exceed 100 ms.

AB - High-speed solar-blind short wavelength ultraviolet radiation detectors based on κ(ϵ)-Ga2O3 layers with Pt contacts were demonstrated and their properties were studied in detail. The κ(ϵ)-Ga2O3 layers were deposited by the halide vapor phase epitaxy on patterned GaN templates with sapphire substrates. The spectral dependencies of the photoelectric properties of structures were analyzed in the wavelength interval 200-370 nm. The maximum photo to dark current ratio, responsivity, detectivity and external quantum efficiency of structures were determined as: 180.86 arb. un., 3.57 A/W, 1.78 × 1012 Hz0.5∙cm∙W−1 and 2193.6%, respectively, at a wavelength of 200 nm and an applied voltage of 1 V. The enhancement of the photoresponse was caused by the decrease in the Schottky barrier at the Pt/κ(ϵ)−Ga2O3 interface under ultraviolet exposure. The detectors demonstrated could functionalize in self-powered mode due to built-in electric field at the Pt/κ(ϵ)-Ga2O3 interface. The responsivity and external quantum efficiency of the structures at a wavelength of 254 nm and zero applied voltage were 0.9 mA/W and 0.46%, respectively. The rise and decay times in self-powered mode did not exceed 100 ms.

KW - κ(ε)-gallium oxide

KW - solar-blind shortwave ultraviolet radiation detectors

KW - self-powered operation mode

KW - self-powered operation mode

KW - solar-blind shortwave ultraviolet radiation detectors

KW - κ(ϵ)-gallium oxide

UR - https://www.mendeley.com/catalogue/117dddc2-9c45-384c-8f95-27aba2dddab3/

U2 - 10.1088/1674-4926/45/4/042502

DO - 10.1088/1674-4926/45/4/042502

M3 - Article

VL - 45

JO - Journal of Semiconductors

JF - Journal of Semiconductors

SN - 1674-4926

IS - 4

M1 - 042502

ER -