TY - JOUR

T1 - HfS2thin films deposited at room temperature by an emerging technique, solution atomic layer deposition

AU - Cao, Yuanyuan

AU - Zhu, Sha

AU - Bachmann, Julien

N1 - Publisher Copyright: © The Royal Society of Chemistry.

PY - 2021/10/7

Y1 - 2021/10/7

N2 - As a member of the two-dimensional metal dichalcogenide family, HfS2 has emerged as a promising material for various optoelectronic applications. Atomic layer deposition is widely used in microelectronics manufacturing with unique properties in terms of accurate thickness control and high conformality. In this work, a simple and versatile method based on the atomic layer deposition principles is presented to generate hafnium disulfide from the solution phase ('solution ALD' or sALD). For ease of comparison with the traditional gaseous atomic layer deposition (gALD) method, the same precursors are used, namely tetrakis-(dimethylamido) hafnium(iv) and H2S. The deposit is characterized on several different oxide substrates by spectroscopic ellipsometry, scanning electron microscopy, and X-ray photoelectron spectroscopy. In the saturated regime, the growth rate depends on the substrate nature and is between 0.4 and 0.6 Å per sALD cycle. This growth rate determined at room temperature is lower than with the gALD process reported at 100 °C recently. At those low deposition temperatures, the films remain in an amorphous state. This success in sALD expands the range of material classes available by the new method, adding transition metal dichalcogenides to the list containing oxides, cubic sulfides, hydrides, and organics so far. It promises to overcome the precursor constraints associated with the traditional gALD method, in particular the volatility requirement.

AB - As a member of the two-dimensional metal dichalcogenide family, HfS2 has emerged as a promising material for various optoelectronic applications. Atomic layer deposition is widely used in microelectronics manufacturing with unique properties in terms of accurate thickness control and high conformality. In this work, a simple and versatile method based on the atomic layer deposition principles is presented to generate hafnium disulfide from the solution phase ('solution ALD' or sALD). For ease of comparison with the traditional gaseous atomic layer deposition (gALD) method, the same precursors are used, namely tetrakis-(dimethylamido) hafnium(iv) and H2S. The deposit is characterized on several different oxide substrates by spectroscopic ellipsometry, scanning electron microscopy, and X-ray photoelectron spectroscopy. In the saturated regime, the growth rate depends on the substrate nature and is between 0.4 and 0.6 Å per sALD cycle. This growth rate determined at room temperature is lower than with the gALD process reported at 100 °C recently. At those low deposition temperatures, the films remain in an amorphous state. This success in sALD expands the range of material classes available by the new method, adding transition metal dichalcogenides to the list containing oxides, cubic sulfides, hydrides, and organics so far. It promises to overcome the precursor constraints associated with the traditional gALD method, in particular the volatility requirement.

KW - ADSORPTION

KW - GROWTH

KW - SURFACES

KW - ALD

UR - http://www.scopus.com/inward/record.url?scp=85116514627&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/b5e7b50d-222a-3696-b448-85502384c79e/

U2 - 10.1039/d1dt01232k

DO - 10.1039/d1dt01232k

M3 - Article

C2 - 34581330

AN - SCOPUS:85116514627

VL - 50

SP - 13066

EP - 13072

JO - Dalton Transactions

JF - Dalton Transactions

SN - 1477-9226

IS - 37

ER -