Heterogeneous nucleation of catalyst-free InAs nanowires on silicon

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Heterogeneous nucleation of catalyst-free InAs nanowires on silicon. / Gomes, U.P.; Ercolani, D.; Zannier, V.; Battiato, S.; Ubyivovk, E.; Mikhailovskii, V.; Murata, Y.; Heun, S.; Beltram, F.; Sorba, L.

In: Nanotechnology, Vol. 28, No. 6, 10.02.2017.

Research output: Contribution to journal › Article › peer-review

Author

Gomes, U.P. ; Ercolani, D. ; Zannier, V. ; Battiato, S. ; Ubyivovk, E. ; Mikhailovskii, V. ; Murata, Y. ; Heun, S. ; Beltram, F. ; Sorba, L. / Heterogeneous nucleation of catalyst-free InAs nanowires on silicon. In: Nanotechnology. 2017 ; Vol. 28, No. 6.

BibTeX

@article{22cf0ba4437b4455bb1cc4cd21cb10be,

title = "Heterogeneous nucleation of catalyst-free InAs nanowires on silicon",

abstract = "We report on the heterogeneous nucleation of catalyst-free InAs\nnanowires on Si(111) substrates by chemical beam epitaxy. We show that\nnanowire nucleation is enhanced by sputtering the silicon substrate with\nenergetic particles. We argue that particle bombardment introduces\nlattice defects on the silicon surface that serve as preferential\nnucleation sites. The formation of these nucleation sites can be\ncontrolled by the sputtering parameters, allowing the control of\nnanowire density in a wide range. Nanowire nucleation is accompanied by\nunwanted parasitic islands, but careful choice of annealing and growth\ntemperature allows us to strongly reduce the relative density of these\nislands and to realize samples with high nanowire yield.",

keywords = "InAs, catalyst free, nanowire, silicon",

author = "U.P. Gomes and D. Ercolani and V. Zannier and S. Battiato and E. Ubyivovk and V. Mikhailovskii and Y. Murata and S. Heun and F. Beltram and L. Sorba",

year = "2017",

month = feb,

day = "10",

doi = "10.1088/1361-6528/aa5252",

language = "English",

volume = "28",

journal = "Nanotechnology",

issn = "0957-4484",

publisher = "IOP Publishing Ltd.",

number = "6",

}

RIS

TY - JOUR

T1 - Heterogeneous nucleation of catalyst-free InAs nanowires on silicon

AU - Gomes, U.P.

AU - Ercolani, D.

AU - Zannier, V.

AU - Battiato, S.

AU - Ubyivovk, E.

AU - Mikhailovskii, V.

AU - Murata, Y.

AU - Heun, S.

AU - Beltram, F.

AU - Sorba, L.

PY - 2017/2/10

Y1 - 2017/2/10

N2 - We report on the heterogeneous nucleation of catalyst-free InAs\nnanowires on Si(111) substrates by chemical beam epitaxy. We show that\nnanowire nucleation is enhanced by sputtering the silicon substrate with\nenergetic particles. We argue that particle bombardment introduces\nlattice defects on the silicon surface that serve as preferential\nnucleation sites. The formation of these nucleation sites can be\ncontrolled by the sputtering parameters, allowing the control of\nnanowire density in a wide range. Nanowire nucleation is accompanied by\nunwanted parasitic islands, but careful choice of annealing and growth\ntemperature allows us to strongly reduce the relative density of these\nislands and to realize samples with high nanowire yield.

AB - We report on the heterogeneous nucleation of catalyst-free InAs\nnanowires on Si(111) substrates by chemical beam epitaxy. We show that\nnanowire nucleation is enhanced by sputtering the silicon substrate with\nenergetic particles. We argue that particle bombardment introduces\nlattice defects on the silicon surface that serve as preferential\nnucleation sites. The formation of these nucleation sites can be\ncontrolled by the sputtering parameters, allowing the control of\nnanowire density in a wide range. Nanowire nucleation is accompanied by\nunwanted parasitic islands, but careful choice of annealing and growth\ntemperature allows us to strongly reduce the relative density of these\nislands and to realize samples with high nanowire yield.

KW - InAs

KW - catalyst free

KW - nanowire

KW - silicon

U2 - 10.1088/1361-6528/aa5252

DO - 10.1088/1361-6528/aa5252

M3 - Article

VL - 28

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 6

ER -

ID: 7909452