Standard

Heteroepitaxial growth of SiC films by carbonization of polyimide Langmuir-Blodgett films on Si. / Goloudina, S. I.; Luchinin, V. V.; Pasyuta, V. M.; Panov, M. F.; Smirnov, A. N.; Kirilenko, D. A.; Semenova, T. F.; Sklizkova, V. P.; Gofman, I. V.; Svetlychnyi, V. M.; Kudryavtsev, V. V.

In: MATEC Web of Conferences, Vol. 98, 04002, 08.02.2017.

Research output: Contribution to journal › Conference article › peer-review

Harvard

Goloudina, SI, Luchinin, VV, Pasyuta, VM, Panov, MF, Smirnov, AN, Kirilenko, DA, Semenova, TF, Sklizkova, VP, Gofman, IV, Svetlychnyi, VM & Kudryavtsev, VV 2017, 'Heteroepitaxial growth of SiC films by carbonization of polyimide Langmuir-Blodgett films on Si', MATEC Web of Conferences, vol. 98, 04002. https://doi.org/10.1051/matecconf/20179804002

APA

Goloudina, S. I., Luchinin, V. V., Pasyuta, V. M., Panov, M. F., Smirnov, A. N., Kirilenko, D. A., Semenova, T. F., Sklizkova, V. P., Gofman, I. V., Svetlychnyi, V. M., & Kudryavtsev, V. V. (2017). Heteroepitaxial growth of SiC films by carbonization of polyimide Langmuir-Blodgett films on Si. MATEC Web of Conferences, 98, [04002]. https://doi.org/10.1051/matecconf/20179804002

Vancouver

Goloudina SI, Luchinin VV, Pasyuta VM, Panov MF, Smirnov AN, Kirilenko DA et al. Heteroepitaxial growth of SiC films by carbonization of polyimide Langmuir-Blodgett films on Si. MATEC Web of Conferences. 2017 Feb 8;98. 04002. https://doi.org/10.1051/matecconf/20179804002

Author

Goloudina, S. I. ; Luchinin, V. V. ; Pasyuta, V. M. ; Panov, M. F. ; Smirnov, A. N. ; Kirilenko, D. A. ; Semenova, T. F. ; Sklizkova, V. P. ; Gofman, I. V. ; Svetlychnyi, V. M. ; Kudryavtsev, V. V. / Heteroepitaxial growth of SiC films by carbonization of polyimide Langmuir-Blodgett films on Si. In: MATEC Web of Conferences. 2017 ; Vol. 98.

BibTeX

@article{bf8329051128440998301292ff694c0c,
title = "Heteroepitaxial growth of SiC films by carbonization of polyimide Langmuir-Blodgett films on Si",
abstract = "High quality single crystal SiC films were prepared by carbonization of polyimide Langmuir-Blodgett films on Si substrate. The films formed after annealing of the polyimide films at 1000°C, 1100°C, 1200°C were studied by Fourier transform-infrared (FTIR) spectroscopy, X-ray diffraction (XRD), Raman spectroscopy, transmission electon microscopy (TEM), transmission electron diffraction (TED), and scanning electron microscopy (SEM). XRD study and HRTEM cross-section revealed that the crystalline SiC film begins to grow on Si (111) substrate at 1000°C. According to the HRTEM cross-section image five planes in 3C-SiC (111) film are aligned with four Si(111) planes at the SiC/Si interface. It was shown the SiC films (35 nm) grown on Si(111) at 1200°C have mainly cubic 3C-SiC structure with a little presence of hexagonal polytypes. Only 3C-SiC films (30 nm) were formed on Si (100) substrate at the same temperature. It was shown the SiC films (30-35 nm) are able to cover the voids in Si substrate with size up to 10 μm.",
author = "Goloudina, {S. I.} and Luchinin, {V. V.} and Pasyuta, {V. M.} and Panov, {M. F.} and Smirnov, {A. N.} and Kirilenko, {D. A.} and Semenova, {T. F.} and Sklizkova, {V. P.} and Gofman, {I. V.} and Svetlychnyi, {V. M.} and Kudryavtsev, {V. V.}",
year = "2017",
month = feb,
day = "8",
doi = "10.1051/matecconf/20179804002",
language = "English",
volume = "98",
journal = "MATEC Web of Conferences",
issn = "2261-236X",
publisher = "EDP Sciences",
note = "16th International Conference on Organized Molecular Films, ICOMF-LB 2016 ; Conference date: 25-07-2016 Through 29-07-2016",

}

RIS

TY - JOUR

T1 - Heteroepitaxial growth of SiC films by carbonization of polyimide Langmuir-Blodgett films on Si

AU - Goloudina, S. I.

AU - Luchinin, V. V.

AU - Pasyuta, V. M.

AU - Panov, M. F.

AU - Smirnov, A. N.

AU - Kirilenko, D. A.

AU - Semenova, T. F.

AU - Sklizkova, V. P.

AU - Gofman, I. V.

AU - Svetlychnyi, V. M.

AU - Kudryavtsev, V. V.

PY - 2017/2/8

Y1 - 2017/2/8

N2 - High quality single crystal SiC films were prepared by carbonization of polyimide Langmuir-Blodgett films on Si substrate. The films formed after annealing of the polyimide films at 1000°C, 1100°C, 1200°C were studied by Fourier transform-infrared (FTIR) spectroscopy, X-ray diffraction (XRD), Raman spectroscopy, transmission electon microscopy (TEM), transmission electron diffraction (TED), and scanning electron microscopy (SEM). XRD study and HRTEM cross-section revealed that the crystalline SiC film begins to grow on Si (111) substrate at 1000°C. According to the HRTEM cross-section image five planes in 3C-SiC (111) film are aligned with four Si(111) planes at the SiC/Si interface. It was shown the SiC films (35 nm) grown on Si(111) at 1200°C have mainly cubic 3C-SiC structure with a little presence of hexagonal polytypes. Only 3C-SiC films (30 nm) were formed on Si (100) substrate at the same temperature. It was shown the SiC films (30-35 nm) are able to cover the voids in Si substrate with size up to 10 μm.

AB - High quality single crystal SiC films were prepared by carbonization of polyimide Langmuir-Blodgett films on Si substrate. The films formed after annealing of the polyimide films at 1000°C, 1100°C, 1200°C were studied by Fourier transform-infrared (FTIR) spectroscopy, X-ray diffraction (XRD), Raman spectroscopy, transmission electon microscopy (TEM), transmission electron diffraction (TED), and scanning electron microscopy (SEM). XRD study and HRTEM cross-section revealed that the crystalline SiC film begins to grow on Si (111) substrate at 1000°C. According to the HRTEM cross-section image five planes in 3C-SiC (111) film are aligned with four Si(111) planes at the SiC/Si interface. It was shown the SiC films (35 nm) grown on Si(111) at 1200°C have mainly cubic 3C-SiC structure with a little presence of hexagonal polytypes. Only 3C-SiC films (30 nm) were formed on Si (100) substrate at the same temperature. It was shown the SiC films (30-35 nm) are able to cover the voids in Si substrate with size up to 10 μm.

UR - http://www.scopus.com/inward/record.url?scp=85013377947&partnerID=8YFLogxK

U2 - 10.1051/matecconf/20179804002

DO - 10.1051/matecconf/20179804002

M3 - Conference article

AN - SCOPUS:85013377947

VL - 98

JO - MATEC Web of Conferences

JF - MATEC Web of Conferences

SN - 2261-236X

M1 - 04002

T2 - 16th International Conference on Organized Molecular Films, ICOMF-LB 2016

Y2 - 25 July 2016 through 29 July 2016

ER -

ID: 50023251