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Helium ion beam induced electron emission from insulating silicon nitride films under charging conditions. / Petrov, Yu.V.; Anikeva, A.E.; Vyvenko, O.F.

In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol. 425, 01.04.2018, p. 11–17.

Research output: Contribution to journal › Article › peer-review

Harvard

Petrov, YV, Anikeva, AE & Vyvenko, OF 2018, 'Helium ion beam induced electron emission from insulating silicon nitride films under charging conditions', NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, vol. 425, pp. 11–17. https://doi.org/10.1016/j.nimb.2018.04.001

APA

Petrov, Y. V., Anikeva, A. E., & Vyvenko, O. F. (2018). Helium ion beam induced electron emission from insulating silicon nitride films under charging conditions. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 425, 11–17. https://doi.org/10.1016/j.nimb.2018.04.001

Vancouver

Petrov YV, Anikeva AE, Vyvenko OF. Helium ion beam induced electron emission from insulating silicon nitride films under charging conditions. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS. 2018 Apr 1;425:11–17. https://doi.org/10.1016/j.nimb.2018.04.001

Author

Petrov, Yu.V. ; Anikeva, A.E. ; Vyvenko, O.F. / Helium ion beam induced electron emission from insulating silicon nitride films under charging conditions. In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS. 2018 ; Vol. 425. pp. 11–17.

BibTeX

@article{cce1d2c95da54339ab2ed9e04314ebfb,
title = "Helium ion beam induced electron emission from insulating silicon nitride films under charging conditions",
abstract = "Secondary electron emission from thin silicon nitride films of different thicknesses on silicon excited by helium ions with energies from 15 to 35 keV was investigated in the helium ion microscope. Secondary electron yield measured with Everhart-Thornley detector decreased with the irradiation time because of the charging of insulating films tending to zero or reaching a non-zero value for relatively thick or thin films, respectively. The finiteness of secondary electron yield value, which was found to be proportional to electronic energy losses of the helium ion in silicon substrate, can be explained by the electron emission excited from the substrate by the helium ions. The method of measurement of secondary electron energy distribution from insulators was suggested, and secondary electron energy distribution from silicon nitride was obtained.",
keywords = "Dielectrics, Helium ion microscopy, Secondary electron emission, Thin films, MICROSCOPE",
author = "Yu.V. Petrov and A.E. Anikeva and O.F. Vyvenko",
year = "2018",
month = apr,
day = "1",
doi = "10.1016/j.nimb.2018.04.001",
language = "English",
volume = "425",
pages = "11–17",
journal = "NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS",
issn = "0168-583X",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Helium ion beam induced electron emission from insulating silicon nitride films under charging conditions

AU - Petrov, Yu.V.

AU - Anikeva, A.E.

AU - Vyvenko, O.F.

PY - 2018/4/1

Y1 - 2018/4/1

N2 - Secondary electron emission from thin silicon nitride films of different thicknesses on silicon excited by helium ions with energies from 15 to 35 keV was investigated in the helium ion microscope. Secondary electron yield measured with Everhart-Thornley detector decreased with the irradiation time because of the charging of insulating films tending to zero or reaching a non-zero value for relatively thick or thin films, respectively. The finiteness of secondary electron yield value, which was found to be proportional to electronic energy losses of the helium ion in silicon substrate, can be explained by the electron emission excited from the substrate by the helium ions. The method of measurement of secondary electron energy distribution from insulators was suggested, and secondary electron energy distribution from silicon nitride was obtained.

AB - Secondary electron emission from thin silicon nitride films of different thicknesses on silicon excited by helium ions with energies from 15 to 35 keV was investigated in the helium ion microscope. Secondary electron yield measured with Everhart-Thornley detector decreased with the irradiation time because of the charging of insulating films tending to zero or reaching a non-zero value for relatively thick or thin films, respectively. The finiteness of secondary electron yield value, which was found to be proportional to electronic energy losses of the helium ion in silicon substrate, can be explained by the electron emission excited from the substrate by the helium ions. The method of measurement of secondary electron energy distribution from insulators was suggested, and secondary electron energy distribution from silicon nitride was obtained.

KW - Dielectrics

KW - Helium ion microscopy

KW - Secondary electron emission

KW - Thin films

KW - MICROSCOPE

UR - http://www.scopus.com/inward/record.url?scp=85056335235&partnerID=8YFLogxK

U2 - 10.1016/j.nimb.2018.04.001

DO - 10.1016/j.nimb.2018.04.001

M3 - Article

VL - 425

SP - 11

EP - 17

JO - NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

JF - NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

SN - 0168-583X

ER -

ID: 33285717