Heavy fullerene for semi-conducting infrared photo diodes (1.5-5.0 μm)

Standard

Heavy fullerene for semi-conducting infrared photo diodes (1.5-5.0 μm). / Sherstnev, V. V.; Charykov, N. A.; Semenov, K. N.; Alekseyev, N. I.; Keskinov, V. A.; Krochina, O. A.

In: Fullerenes Nanotubes and Carbon Nanostructures, Vol. 20, No. 8, 01.11.2012, p. 648-655.

Research output: Contribution to journal › Article › peer-review

Harvard

Sherstnev, VV, Charykov, NA, Semenov, KN, Alekseyev, NI, Keskinov, VA & Krochina, OA 2012, 'Heavy fullerene for semi-conducting infrared photo diodes (1.5-5.0 μm)', Fullerenes Nanotubes and Carbon Nanostructures, vol. 20, no. 8, pp. 648-655. https://doi.org/10.1080/1536383X.2011.552995

APA

Sherstnev, V. V., Charykov, N. A., Semenov, K. N., Alekseyev, N. I., Keskinov, V. A., & Krochina, O. A. (2012). Heavy fullerene for semi-conducting infrared photo diodes (1.5-5.0 μm). Fullerenes Nanotubes and Carbon Nanostructures, 20(8), 648-655. https://doi.org/10.1080/1536383X.2011.552995

Vancouver

Sherstnev VV, Charykov NA, Semenov KN, Alekseyev NI, Keskinov VA, Krochina OA. Heavy fullerene for semi-conducting infrared photo diodes (1.5-5.0 μm). Fullerenes Nanotubes and Carbon Nanostructures. 2012 Nov 1;20(8):648-655. https://doi.org/10.1080/1536383X.2011.552995

Author

Sherstnev, V. V. ; Charykov, N. A. ; Semenov, K. N. ; Alekseyev, N. I. ; Keskinov, V. A. ; Krochina, O. A. / Heavy fullerene for semi-conducting infrared photo diodes (1.5-5.0 μm). In: Fullerenes Nanotubes and Carbon Nanostructures. 2012 ; Vol. 20, No. 8. pp. 648-655.

BibTeX

@article{9b322f396fdb40b08c8c6fbeedb587e1,

title = "Heavy fullerene for semi-conducting infrared photo diodes (1.5-5.0 μm)",

abstract = "A new method for the passivation of IR (1.5 - 5.0 μm) photo diode surfaces is offered using a mix of heavy fullerenes (HFull-mix):C 76 + C 78 + C 84 + C 90 + ⋯Principal operational characteristics of the diodes are researched. It is shown that with such passivation the dark current of the photo diodes decreases 14 %. The Peltier effect on heterojunction semiconductor A 3B 5/HFull-mix is found.",

author = "Sherstnev, {V. V.} and Charykov, {N. A.} and Semenov, {K. N.} and Alekseyev, {N. I.} and Keskinov, {V. A.} and Krochina, {O. A.}",

year = "2012",

month = nov,

day = "1",

doi = "10.1080/1536383X.2011.552995",

language = "English",

volume = "20",

pages = "648--655",

journal = "Fullerenes Nanotubes and Carbon Nanostructures",

issn = "1536-383X",

publisher = "Taylor & Francis",

number = "8",

}

RIS

TY - JOUR

T1 - Heavy fullerene for semi-conducting infrared photo diodes (1.5-5.0 μm)

AU - Sherstnev, V. V.

AU - Charykov, N. A.

AU - Semenov, K. N.

AU - Alekseyev, N. I.

AU - Keskinov, V. A.

AU - Krochina, O. A.

PY - 2012/11/1

Y1 - 2012/11/1

N2 - A new method for the passivation of IR (1.5 - 5.0 μm) photo diode surfaces is offered using a mix of heavy fullerenes (HFull-mix):C 76 + C 78 + C 84 + C 90 + ⋯Principal operational characteristics of the diodes are researched. It is shown that with such passivation the dark current of the photo diodes decreases 14 %. The Peltier effect on heterojunction semiconductor A 3B 5/HFull-mix is found.

AB - A new method for the passivation of IR (1.5 - 5.0 μm) photo diode surfaces is offered using a mix of heavy fullerenes (HFull-mix):C 76 + C 78 + C 84 + C 90 + ⋯Principal operational characteristics of the diodes are researched. It is shown that with such passivation the dark current of the photo diodes decreases 14 %. The Peltier effect on heterojunction semiconductor A 3B 5/HFull-mix is found.

UR - http://www.scopus.com/inward/record.url?scp=84861494665&partnerID=8YFLogxK

U2 - 10.1080/1536383X.2011.552995

DO - 10.1080/1536383X.2011.552995

M3 - Article

VL - 20

SP - 648

EP - 655

JO - Fullerenes Nanotubes and Carbon Nanostructures

JF - Fullerenes Nanotubes and Carbon Nanostructures

SN - 1536-383X

IS - 8

ER -

ID: 5407478