Research output: Contribution to journal › Article › peer-review
Halide Vapor Phase Epitaxy α- and ε-Ga2O3 Epitaxial Films Grown on Patterned Sapphire Substrates. / Shapenkov, Sevastian; Vyvenko, Oleg; Ubyivovk, Evgeny; Medvedev, Oleg; Varygin, Georgiy; Chikiryaka, Andrey; Pechnikov, Alexei; Scheglov, Mikhail; Stepanov, Sergei; Nikolaev, Vladimir.
In: Physica Status Solidi (A) Applications and Materials Science, Vol. 217, No. 14, 1900892, 07.2020.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Halide Vapor Phase Epitaxy α- and ε-Ga2O3 Epitaxial Films Grown on Patterned Sapphire Substrates
AU - Shapenkov, Sevastian
AU - Vyvenko, Oleg
AU - Ubyivovk, Evgeny
AU - Medvedev, Oleg
AU - Varygin, Georgiy
AU - Chikiryaka, Andrey
AU - Pechnikov, Alexei
AU - Scheglov, Mikhail
AU - Stepanov, Sergei
AU - Nikolaev, Vladimir
N1 - Funding Information: SEM and TEM studies were conducted using facilities of Interdisciplinary Resource Center for Nanotechnology at Saint-Petersburg State University.
PY - 2020/7
Y1 - 2020/7
N2 - The growth of Ga2O3 films by halide vapor phase epitaxy on plain and cone-shaped patterned sapphire substrates (PSS) is reported. The obtained specimens are characterized by X-ray diffraction, transmission electron microscopy, cathodoluminescence, optical transmission spectroscopy, and current–voltage measurements. Both types of Ga2O3 layers are of reasonably high crystal qualities; their physical properties, however, are very different. Under the same conditions, the growth on plain substrates results in a continuous α-Ga2O3 layer, whereas the growth on PSS produces a regular array of α-Ga2O3 columns on top of the sapphire cones with the space between them filled with ε-Ga2O3. Ga2O3 films grown on plain sapphire are insulating; in contrast, Ga2O3 films grown on PSS are conducting. It is found that the conductivity of Ga2O3 on PSS follows the Arrhenius law with the activation energy of 0.33 eV. New luminescent bands for α- and ε-phases are found. Spectral components of the defect-related luminescence for α- and ε- phases are identified.
AB - The growth of Ga2O3 films by halide vapor phase epitaxy on plain and cone-shaped patterned sapphire substrates (PSS) is reported. The obtained specimens are characterized by X-ray diffraction, transmission electron microscopy, cathodoluminescence, optical transmission spectroscopy, and current–voltage measurements. Both types of Ga2O3 layers are of reasonably high crystal qualities; their physical properties, however, are very different. Under the same conditions, the growth on plain substrates results in a continuous α-Ga2O3 layer, whereas the growth on PSS produces a regular array of α-Ga2O3 columns on top of the sapphire cones with the space between them filled with ε-Ga2O3. Ga2O3 films grown on plain sapphire are insulating; in contrast, Ga2O3 films grown on PSS are conducting. It is found that the conductivity of Ga2O3 on PSS follows the Arrhenius law with the activation energy of 0.33 eV. New luminescent bands for α- and ε-phases are found. Spectral components of the defect-related luminescence for α- and ε- phases are identified.
KW - cathodoluminescence
KW - gallium oxide
KW - halide vapor phase epitaxy
KW - patterned sapphire substrates
KW - scanning electron microscopy
KW - transmission electron microscopy
KW - GALLIUM OXIDE
KW - DIFFRACTION BASED ANALYSIS
KW - EPSILON-GA2O3
KW - MOCVD
KW - LAYERS
KW - TEXTURE
KW - FRACTIONS
KW - NANOCRYSTALLINE THIN-FILMS
UR - http://www.scopus.com/inward/record.url?scp=85080875172&partnerID=8YFLogxK
UR - https://www.mendeley.com/catalogue/6d0b47b3-29ab-3ca5-b0f2-f8375b331a4f/
U2 - 10.1002/pssa.201900892
DO - 10.1002/pssa.201900892
M3 - Article
AN - SCOPUS:85080875172
VL - 217
JO - Physica Status Solidi (A) Applications and Materials Science
JF - Physica Status Solidi (A) Applications and Materials Science
SN - 1862-6300
IS - 14
M1 - 1900892
ER -
ID: 52427648