Growth of Self-Catalyzed InAs/InSb Axial Heterostructured Nanowires: Experiment and Theory

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Growth of Self-Catalyzed InAs/InSb Axial Heterostructured Nanowires: Experiment and Theory. / Arif, Omer ; Zannier, Valentina ; Dubrovskii, Vladimir G. ; Shtrom, Igor V. ; Rossi, Francesca; Beltram, Fabio ; Sorba, Lucia .

In: Nanomaterials, Vol. 10, No. 3, 494, 03.2020.

Research output: Contribution to journal › Article › peer-review

BibTeX

@article{ee82f180fd894612b73a8b64caf99781,

title = "Growth of Self-Catalyzed InAs/InSb Axial Heterostructured Nanowires: Experiment and Theory",

abstract = "The growth mechanisms of self-catalyzed InAs/InSb axial nanowire heterostructures are thoroughly investigated as a function of the In and Sb line pressures and growth time. Some interesting phenomena are observed and analyzed. In particular, the presence of In droplet on top of InSb segment is shown to be essential for forming axial heterostructures in the self-catalyzed vapor-liquid-solid mode. Axial versus radial growth rates of InSb segment are investigated under different growth conditions and described within a dedicated model containing no free parameters. It is shown that widening of InSb segment with respect to InAs stem is controlled by the vapor-solid growth on the nanowire sidewalls rather than by the droplet swelling. The In droplet can even shrink smaller than the nanowire facet under Sb-rich conditions. These results shed more light on the growth mechanisms of self-catalyzed heterostructures and give clear route for engineering the morphology of InAs/InSb axial nanowire heterostructures for different applications.",

keywords = "нитевидные нанокристаллы, Химическая пучковая эпитаксия, автокаталитический рост, InSb ННК, InSb nanowires, axial heterostructures, self-catalyzed growth, modelling, Self-catalyzed growth, Modelling, Axial heterostructures, CONTACT-ANGLE, GAAS",

author = "Omer Arif and Valentina Zannier and Dubrovskii, {Vladimir G.} and Shtrom, {Igor V.} and Francesca Rossi and Fabio Beltram and Lucia Sorba",

note = "Publisher Copyright: {\textcopyright} 2020 by the authors. Licensee MDPI, Basel, Switzerland.",

year = "2020",

month = mar,

doi = "10.3390/nano10030494",

language = "English",

volume = "10",

journal = "Nanomaterials",

issn = "2079-4991",

publisher = "MDPI AG",

number = "3",

}

RIS

TY - JOUR

T1 - Growth of Self-Catalyzed InAs/InSb Axial Heterostructured Nanowires: Experiment and Theory

AU - Arif, Omer

AU - Zannier, Valentina

AU - Dubrovskii, Vladimir G.

AU - Shtrom, Igor V.

AU - Rossi, Francesca

AU - Beltram, Fabio

AU - Sorba, Lucia

PY - 2020/3

Y1 - 2020/3

N2 - The growth mechanisms of self-catalyzed InAs/InSb axial nanowire heterostructures are thoroughly investigated as a function of the In and Sb line pressures and growth time. Some interesting phenomena are observed and analyzed. In particular, the presence of In droplet on top of InSb segment is shown to be essential for forming axial heterostructures in the self-catalyzed vapor-liquid-solid mode. Axial versus radial growth rates of InSb segment are investigated under different growth conditions and described within a dedicated model containing no free parameters. It is shown that widening of InSb segment with respect to InAs stem is controlled by the vapor-solid growth on the nanowire sidewalls rather than by the droplet swelling. The In droplet can even shrink smaller than the nanowire facet under Sb-rich conditions. These results shed more light on the growth mechanisms of self-catalyzed heterostructures and give clear route for engineering the morphology of InAs/InSb axial nanowire heterostructures for different applications.

AB - The growth mechanisms of self-catalyzed InAs/InSb axial nanowire heterostructures are thoroughly investigated as a function of the In and Sb line pressures and growth time. Some interesting phenomena are observed and analyzed. In particular, the presence of In droplet on top of InSb segment is shown to be essential for forming axial heterostructures in the self-catalyzed vapor-liquid-solid mode. Axial versus radial growth rates of InSb segment are investigated under different growth conditions and described within a dedicated model containing no free parameters. It is shown that widening of InSb segment with respect to InAs stem is controlled by the vapor-solid growth on the nanowire sidewalls rather than by the droplet swelling. The In droplet can even shrink smaller than the nanowire facet under Sb-rich conditions. These results shed more light on the growth mechanisms of self-catalyzed heterostructures and give clear route for engineering the morphology of InAs/InSb axial nanowire heterostructures for different applications.

KW - нитевидные нанокристаллы

KW - Химическая пучковая эпитаксия

KW - автокаталитический рост

KW - InSb ННК

KW - InSb nanowires

KW - axial heterostructures

KW - self-catalyzed growth

KW - modelling

KW - Self-catalyzed growth

KW - Modelling

KW - Axial heterostructures

KW - CONTACT-ANGLE

KW - GAAS

UR - http://www.scopus.com/inward/record.url?scp=85081199406&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/07b9265a-a48f-378d-be6d-15e10c3fb688/

U2 - 10.3390/nano10030494

DO - 10.3390/nano10030494

M3 - Article

VL - 10

JO - Nanomaterials

JF - Nanomaterials

SN - 2079-4991

IS - 3

M1 - 494

ER -

ID: 70923522