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Growth of III-V nanowires by molecular beam epitaxy : the role of material exchange with the substrate. / Sibirev, N. V.; Dubrovskii, V. G.

2022 International Conference Laser Optics, ICLO 2022 - Proceedingss. Institute of Electrical and Electronics Engineers Inc., 2022. (2022 International Conference Laser Optics (ICLO)).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Harvard

Sibirev, NV & Dubrovskii, VG 2022, Growth of III-V nanowires by molecular beam epitaxy: the role of material exchange with the substrate. in 2022 International Conference Laser Optics, ICLO 2022 - Proceedingss. 2022 International Conference Laser Optics (ICLO), Institute of Electrical and Electronics Engineers Inc., 2022 International Conference Laser Optics, ICLO 2022, St. Petersburg, Russian Federation, 20/06/22. https://doi.org/10.1109/iclo54117.2022.9840332

APA

Sibirev, N. V., & Dubrovskii, V. G. (2022). Growth of III-V nanowires by molecular beam epitaxy: the role of material exchange with the substrate. In 2022 International Conference Laser Optics, ICLO 2022 - Proceedingss (2022 International Conference Laser Optics (ICLO)). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/iclo54117.2022.9840332

Vancouver

Sibirev NV, Dubrovskii VG. Growth of III-V nanowires by molecular beam epitaxy: the role of material exchange with the substrate. In 2022 International Conference Laser Optics, ICLO 2022 - Proceedingss. Institute of Electrical and Electronics Engineers Inc. 2022. (2022 International Conference Laser Optics (ICLO)). https://doi.org/10.1109/iclo54117.2022.9840332

Author

Sibirev, N. V. ; Dubrovskii, V. G. / Growth of III-V nanowires by molecular beam epitaxy : the role of material exchange with the substrate. 2022 International Conference Laser Optics, ICLO 2022 - Proceedingss. Institute of Electrical and Electronics Engineers Inc., 2022. (2022 International Conference Laser Optics (ICLO)).

BibTeX

@inproceedings{d8ddfc74d09a4bfc9b63d83717e44a33,
title = "Growth of III-V nanowires by molecular beam epitaxy: the role of material exchange with the substrate",
abstract = "Growth theory of III-V nanowires fabricated by molecular beam epitaxy is developed to reveal the role of the substrate which can be either unpatterned or masked with an inert SiOx, layer. Axial and radial growths of nanowires are described in both cases, converging to the asymptotic stage which is independent of the substrate due to the shadowing effect. The nanowire lengths and radii are calculated as functions of time and the growth parameters. Good fits are obtained with the data on the growth kinetics of GaAs, GaP, InAs and InP nanowires. ",
keywords = "growth modeling, molecular beam epitaxy, shadowing effect",
author = "Sibirev, {N. V.} and Dubrovskii, {V. G.}",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 International Conference Laser Optics, ICLO 2022 ; Conference date: 20-06-2022 Through 24-06-2022",
year = "2022",
month = jun,
day = "20",
doi = "10.1109/iclo54117.2022.9840332",
language = "English",
isbn = "9781665466646",
series = "2022 International Conference Laser Optics (ICLO)",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2022 International Conference Laser Optics, ICLO 2022 - Proceedingss",
address = "United States",

}

RIS

TY - GEN

T1 - Growth of III-V nanowires by molecular beam epitaxy

T2 - 2022 International Conference Laser Optics, ICLO 2022

AU - Sibirev, N. V.

AU - Dubrovskii, V. G.

N1 - Conference code: 20

PY - 2022/6/20

Y1 - 2022/6/20

N2 - Growth theory of III-V nanowires fabricated by molecular beam epitaxy is developed to reveal the role of the substrate which can be either unpatterned or masked with an inert SiOx, layer. Axial and radial growths of nanowires are described in both cases, converging to the asymptotic stage which is independent of the substrate due to the shadowing effect. The nanowire lengths and radii are calculated as functions of time and the growth parameters. Good fits are obtained with the data on the growth kinetics of GaAs, GaP, InAs and InP nanowires.

AB - Growth theory of III-V nanowires fabricated by molecular beam epitaxy is developed to reveal the role of the substrate which can be either unpatterned or masked with an inert SiOx, layer. Axial and radial growths of nanowires are described in both cases, converging to the asymptotic stage which is independent of the substrate due to the shadowing effect. The nanowire lengths and radii are calculated as functions of time and the growth parameters. Good fits are obtained with the data on the growth kinetics of GaAs, GaP, InAs and InP nanowires.

KW - growth modeling

KW - molecular beam epitaxy

KW - shadowing effect

UR - http://www.scopus.com/inward/record.url?scp=85136395053&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/5fc9189d-2b57-30cf-abea-d7052a255845/

U2 - 10.1109/iclo54117.2022.9840332

DO - 10.1109/iclo54117.2022.9840332

M3 - Conference contribution

AN - SCOPUS:85136395053

SN - 9781665466646

T3 - 2022 International Conference Laser Optics (ICLO)

BT - 2022 International Conference Laser Optics, ICLO 2022 - Proceedingss

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 20 June 2022 through 24 June 2022

ER -

ID: 100346645