Standard

Growth of GaN Nanotubes and Nanowires on Au–Ni Catalysts. / Sibirev, N. V.; Huang, H.; Ubyivovk, E. V.; Lv, R.; Zhao, D.; Guang, Q.; Berdnikov, Yu S.; Yan, X.; Koryakin, A. A.; Shtrom, I. V.

In: Technical Physics Letters, Vol. 45, No. 2, 01.02.2019, p. 159-162.

Research output: Contribution to journalArticlepeer-review

Harvard

Sibirev, NV, Huang, H, Ubyivovk, EV, Lv, R, Zhao, D, Guang, Q, Berdnikov, YS, Yan, X, Koryakin, AA & Shtrom, IV 2019, 'Growth of GaN Nanotubes and Nanowires on Au–Ni Catalysts', Technical Physics Letters, vol. 45, no. 2, pp. 159-162. https://doi.org/10.1134/S1063785019020329

APA

Sibirev, N. V., Huang, H., Ubyivovk, E. V., Lv, R., Zhao, D., Guang, Q., Berdnikov, Y. S., Yan, X., Koryakin, A. A., & Shtrom, I. V. (2019). Growth of GaN Nanotubes and Nanowires on Au–Ni Catalysts. Technical Physics Letters, 45(2), 159-162. https://doi.org/10.1134/S1063785019020329

Vancouver

Author

Sibirev, N. V. ; Huang, H. ; Ubyivovk, E. V. ; Lv, R. ; Zhao, D. ; Guang, Q. ; Berdnikov, Yu S. ; Yan, X. ; Koryakin, A. A. ; Shtrom, I. V. / Growth of GaN Nanotubes and Nanowires on Au–Ni Catalysts. In: Technical Physics Letters. 2019 ; Vol. 45, No. 2. pp. 159-162.

BibTeX

@article{f98b9dc0bf914ba9b23c7e994d5fffdd,
title = "Growth of GaN Nanotubes and Nanowires on Au–Ni Catalysts",
abstract = "Abstract: Arrays of GaN nanowires (NWs) and nanotubes (NTs) have been grown by metalorganic vapor phase epitaxy using a gold–nickel film as the catalyst. The simultaneous formation of both NTs and NWs in one process in the presence of various Au–Ni catalyst compositions is explained. It is established that NTs grow on solid catalyst particles, while NWs grow according to the classical vapor–liquid–solid mechanism. The optoelectronic properties of obtained NTs and NWs have been studied using photo- and cathodoluminescence techniques.",
keywords = "NANOSTRUCTURES",
author = "Sibirev, {N. V.} and H. Huang and Ubyivovk, {E. V.} and R. Lv and D. Zhao and Q. Guang and Berdnikov, {Yu S.} and X. Yan and Koryakin, {A. A.} and Shtrom, {I. V.}",
year = "2019",
month = feb,
day = "1",
doi = "10.1134/S1063785019020329",
language = "English",
volume = "45",
pages = "159--162",
journal = "Technical Physics Letters",
issn = "1063-7850",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "2",

}

RIS

TY - JOUR

T1 - Growth of GaN Nanotubes and Nanowires on Au–Ni Catalysts

AU - Sibirev, N. V.

AU - Huang, H.

AU - Ubyivovk, E. V.

AU - Lv, R.

AU - Zhao, D.

AU - Guang, Q.

AU - Berdnikov, Yu S.

AU - Yan, X.

AU - Koryakin, A. A.

AU - Shtrom, I. V.

PY - 2019/2/1

Y1 - 2019/2/1

N2 - Abstract: Arrays of GaN nanowires (NWs) and nanotubes (NTs) have been grown by metalorganic vapor phase epitaxy using a gold–nickel film as the catalyst. The simultaneous formation of both NTs and NWs in one process in the presence of various Au–Ni catalyst compositions is explained. It is established that NTs grow on solid catalyst particles, while NWs grow according to the classical vapor–liquid–solid mechanism. The optoelectronic properties of obtained NTs and NWs have been studied using photo- and cathodoluminescence techniques.

AB - Abstract: Arrays of GaN nanowires (NWs) and nanotubes (NTs) have been grown by metalorganic vapor phase epitaxy using a gold–nickel film as the catalyst. The simultaneous formation of both NTs and NWs in one process in the presence of various Au–Ni catalyst compositions is explained. It is established that NTs grow on solid catalyst particles, while NWs grow according to the classical vapor–liquid–solid mechanism. The optoelectronic properties of obtained NTs and NWs have been studied using photo- and cathodoluminescence techniques.

KW - NANOSTRUCTURES

UR - http://www.scopus.com/inward/record.url?scp=85065304790&partnerID=8YFLogxK

UR - http://www.mendeley.com/research/growth-gan-nanotubes-nanowires-auni-catalysts

U2 - 10.1134/S1063785019020329

DO - 10.1134/S1063785019020329

M3 - Article

AN - SCOPUS:85065304790

VL - 45

SP - 159

EP - 162

JO - Technical Physics Letters

JF - Technical Physics Letters

SN - 1063-7850

IS - 2

ER -

ID: 41892308