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Growth and optical properties of filamentary GaN nanocrystals grown on a hybrid SiC/Si(111) substrate by molecular beam epitaxy. / Reznik, R. R.; Kotlyar, K. P.; Il’kiv, I. V.; Soshnikov, I. P.; Kukushkin, S. A.; Osipov, A. V.; Nikitina, E. V.; Cirlin, G. E.

In: Physics of the Solid State, Vol. 58, No. 10, 01.10.2016, p. 1952-1955.

Research output: Contribution to journal › Article › peer-review

Harvard

Reznik, RR, Kotlyar, KP, Il’kiv, IV, Soshnikov, IP, Kukushkin, SA, Osipov, AV, Nikitina, EV & Cirlin, GE 2016, 'Growth and optical properties of filamentary GaN nanocrystals grown on a hybrid SiC/Si(111) substrate by molecular beam epitaxy', Physics of the Solid State, vol. 58, no. 10, pp. 1952-1955. https://doi.org/10.1134/S1063783416100292

APA

Reznik, R. R., Kotlyar, K. P., Il’kiv, I. V., Soshnikov, I. P., Kukushkin, S. A., Osipov, A. V., Nikitina, E. V., & Cirlin, G. E. (2016). Growth and optical properties of filamentary GaN nanocrystals grown on a hybrid SiC/Si(111) substrate by molecular beam epitaxy. Physics of the Solid State, 58(10), 1952-1955. https://doi.org/10.1134/S1063783416100292

Vancouver

Reznik RR, Kotlyar KP, Il’kiv IV, Soshnikov IP, Kukushkin SA, Osipov AV et al. Growth and optical properties of filamentary GaN nanocrystals grown on a hybrid SiC/Si(111) substrate by molecular beam epitaxy. Physics of the Solid State. 2016 Oct 1;58(10):1952-1955. https://doi.org/10.1134/S1063783416100292

Author

Reznik, R. R. ; Kotlyar, K. P. ; Il’kiv, I. V. ; Soshnikov, I. P. ; Kukushkin, S. A. ; Osipov, A. V. ; Nikitina, E. V. ; Cirlin, G. E. / Growth and optical properties of filamentary GaN nanocrystals grown on a hybrid SiC/Si(111) substrate by molecular beam epitaxy. In: Physics of the Solid State. 2016 ; Vol. 58, No. 10. pp. 1952-1955.

BibTeX

@article{e7803d9e1fc94b05838236c6a20b8c76,
title = "Growth and optical properties of filamentary GaN nanocrystals grown on a hybrid SiC/Si(111) substrate by molecular beam epitaxy",
abstract = "The potential to grow filamentary GaN nanocrystals by molecular beam epitaxy on a silicon substrate with a nanosized buffer layer of silicon carbide has been demonstrated. Morphological and optical properties of the obtained system have been studied. It has been shown that the intensity of the photoluminescence spectrum peak of such structures is higher than that of the best filamentary GaN nanocrystals without the buffer silicon carbide layer by a factor of more than two.",
author = "Reznik, {R. R.} and Kotlyar, {K. P.} and Il{\textquoteright}kiv, {I. V.} and Soshnikov, {I. P.} and Kukushkin, {S. A.} and Osipov, {A. V.} and Nikitina, {E. V.} and Cirlin, {G. E.}",
note = "Publisher Copyright: {\textcopyright} 2016, Pleiades Publishing, Ltd.",
year = "2016",
month = oct,
day = "1",
doi = "10.1134/S1063783416100292",
language = "English",
volume = "58",
pages = "1952--1955",
journal = "Physics of the Solid State",
issn = "1063-7834",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "10",

}

RIS

TY - JOUR

T1 - Growth and optical properties of filamentary GaN nanocrystals grown on a hybrid SiC/Si(111) substrate by molecular beam epitaxy

AU - Reznik, R. R.

AU - Kotlyar, K. P.

AU - Il’kiv, I. V.

AU - Soshnikov, I. P.

AU - Kukushkin, S. A.

AU - Osipov, A. V.

AU - Nikitina, E. V.

AU - Cirlin, G. E.

N1 - Publisher Copyright: © 2016, Pleiades Publishing, Ltd.

PY - 2016/10/1

Y1 - 2016/10/1

N2 - The potential to grow filamentary GaN nanocrystals by molecular beam epitaxy on a silicon substrate with a nanosized buffer layer of silicon carbide has been demonstrated. Morphological and optical properties of the obtained system have been studied. It has been shown that the intensity of the photoluminescence spectrum peak of such structures is higher than that of the best filamentary GaN nanocrystals without the buffer silicon carbide layer by a factor of more than two.

AB - The potential to grow filamentary GaN nanocrystals by molecular beam epitaxy on a silicon substrate with a nanosized buffer layer of silicon carbide has been demonstrated. Morphological and optical properties of the obtained system have been studied. It has been shown that the intensity of the photoluminescence spectrum peak of such structures is higher than that of the best filamentary GaN nanocrystals without the buffer silicon carbide layer by a factor of more than two.

UR - http://www.scopus.com/inward/record.url?scp=84991660182&partnerID=8YFLogxK

U2 - 10.1134/S1063783416100292

DO - 10.1134/S1063783416100292

M3 - Article

AN - SCOPUS:84991660182

VL - 58

SP - 1952

EP - 1955

JO - Physics of the Solid State

JF - Physics of the Solid State

SN - 1063-7834

IS - 10

ER -

ID: 99724165