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Giant Zeeman splitting of light holes in GaAs/AlGaAs quantum wells. / Durnev, M. V.; Glazov, M. M.; Ivchenko, E. L.

In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 44, No. 4, 01.01.2012, p. 797-802.

Research output: Contribution to journal › Article › peer-review

Harvard

Durnev, MV, Glazov, MM & Ivchenko, EL 2012, 'Giant Zeeman splitting of light holes in GaAs/AlGaAs quantum wells', Physica E: Low-Dimensional Systems and Nanostructures, vol. 44, no. 4, pp. 797-802. https://doi.org/10.1016/j.physe.2011.12.003

APA

Durnev, M. V., Glazov, M. M., & Ivchenko, E. L. (2012). Giant Zeeman splitting of light holes in GaAs/AlGaAs quantum wells. Physica E: Low-Dimensional Systems and Nanostructures, 44(4), 797-802. https://doi.org/10.1016/j.physe.2011.12.003

Vancouver

Durnev MV, Glazov MM, Ivchenko EL. Giant Zeeman splitting of light holes in GaAs/AlGaAs quantum wells. Physica E: Low-Dimensional Systems and Nanostructures. 2012 Jan 1;44(4):797-802. https://doi.org/10.1016/j.physe.2011.12.003

Author

Durnev, M. V. ; Glazov, M. M. ; Ivchenko, E. L. / Giant Zeeman splitting of light holes in GaAs/AlGaAs quantum wells. In: Physica E: Low-Dimensional Systems and Nanostructures. 2012 ; Vol. 44, No. 4. pp. 797-802.

BibTeX

@article{d9514551194c407f9ca11c990734b4aa,
title = "Giant Zeeman splitting of light holes in GaAs/AlGaAs quantum wells",
abstract = "We have developed a theory of the longitudinal g-factor of light holes in semiconductor quantum wells. It is shown that the absolute value of the light-hole g-factor can strongly exceed its value in the bulk and, moreover, the dependence of the Zeeman splitting on magnetic field becomes non-linear in relatively low fields. These effects are determined by the proximity of the ground light-hole subband, lh1, to the first excited heavy-hole subband, hh2, in GaAs/AlGaAs-type structures. The particular calculations are performed in the framework of Luttinger Hamiltonian taking into account both the magnetic field-induced mixing of lh1 and hh2 states and the mixing of these states at heterointerfaces, the latter caused by chemical bonds anisotropy. A theory of magneto-induced reflection and transmission of light through the quantum wells for the light-hole-to-electron absorption edge is also presented.",
author = "Durnev, {M. V.} and Glazov, {M. M.} and Ivchenko, {E. L.}",
year = "2012",
month = jan,
day = "1",
doi = "10.1016/j.physe.2011.12.003",
language = "English",
volume = "44",
pages = "797--802",
journal = "Physica E: Low-Dimensional Systems and Nanostructures",
issn = "1386-9477",
publisher = "Elsevier",
number = "4",

}

RIS

TY - JOUR

T1 - Giant Zeeman splitting of light holes in GaAs/AlGaAs quantum wells

AU - Durnev, M. V.

AU - Glazov, M. M.

AU - Ivchenko, E. L.

PY - 2012/1/1

Y1 - 2012/1/1

N2 - We have developed a theory of the longitudinal g-factor of light holes in semiconductor quantum wells. It is shown that the absolute value of the light-hole g-factor can strongly exceed its value in the bulk and, moreover, the dependence of the Zeeman splitting on magnetic field becomes non-linear in relatively low fields. These effects are determined by the proximity of the ground light-hole subband, lh1, to the first excited heavy-hole subband, hh2, in GaAs/AlGaAs-type structures. The particular calculations are performed in the framework of Luttinger Hamiltonian taking into account both the magnetic field-induced mixing of lh1 and hh2 states and the mixing of these states at heterointerfaces, the latter caused by chemical bonds anisotropy. A theory of magneto-induced reflection and transmission of light through the quantum wells for the light-hole-to-electron absorption edge is also presented.

AB - We have developed a theory of the longitudinal g-factor of light holes in semiconductor quantum wells. It is shown that the absolute value of the light-hole g-factor can strongly exceed its value in the bulk and, moreover, the dependence of the Zeeman splitting on magnetic field becomes non-linear in relatively low fields. These effects are determined by the proximity of the ground light-hole subband, lh1, to the first excited heavy-hole subband, hh2, in GaAs/AlGaAs-type structures. The particular calculations are performed in the framework of Luttinger Hamiltonian taking into account both the magnetic field-induced mixing of lh1 and hh2 states and the mixing of these states at heterointerfaces, the latter caused by chemical bonds anisotropy. A theory of magneto-induced reflection and transmission of light through the quantum wells for the light-hole-to-electron absorption edge is also presented.

UR - http://www.scopus.com/inward/record.url?scp=84855906690&partnerID=8YFLogxK

U2 - 10.1016/j.physe.2011.12.003

DO - 10.1016/j.physe.2011.12.003

M3 - Article

AN - SCOPUS:84855906690

VL - 44

SP - 797

EP - 802

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

IS - 4

ER -

ID: 36375224