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GeTe2 Phase Change Material for Terahertz Devices with Reconfigurable Functionalities Using Optical Activation. / Konnikova, Maria R.; Khomenko, Maxim D.; Tverjanovich, Andrey S.; Bereznev, Sergei; Mankova, Anna A.; Parashchuk, Olga D.; Vasilevsky, Ivan S.; Ozheredov, Ilya A.; Shkurinov, Alexander P.; Bychkov, Eugene A.

In: ACS applied materials & interfaces, Vol. 15, No. 7, 13.02.2023, p. 9638-9648.

Research output: Contribution to journalArticlepeer-review

Harvard

Konnikova, MR, Khomenko, MD, Tverjanovich, AS, Bereznev, S, Mankova, AA, Parashchuk, OD, Vasilevsky, IS, Ozheredov, IA, Shkurinov, AP & Bychkov, EA 2023, 'GeTe2 Phase Change Material for Terahertz Devices with Reconfigurable Functionalities Using Optical Activation', ACS applied materials & interfaces, vol. 15, no. 7, pp. 9638-9648. https://doi.org/10.1021/acsami.2c21678

APA

Konnikova, M. R., Khomenko, M. D., Tverjanovich, A. S., Bereznev, S., Mankova, A. A., Parashchuk, O. D., Vasilevsky, I. S., Ozheredov, I. A., Shkurinov, A. P., & Bychkov, E. A. (2023). GeTe2 Phase Change Material for Terahertz Devices with Reconfigurable Functionalities Using Optical Activation. ACS applied materials & interfaces, 15(7), 9638-9648. https://doi.org/10.1021/acsami.2c21678

Vancouver

Konnikova MR, Khomenko MD, Tverjanovich AS, Bereznev S, Mankova AA, Parashchuk OD et al. GeTe2 Phase Change Material for Terahertz Devices with Reconfigurable Functionalities Using Optical Activation. ACS applied materials & interfaces. 2023 Feb 13;15(7):9638-9648. https://doi.org/10.1021/acsami.2c21678

Author

Konnikova, Maria R. ; Khomenko, Maxim D. ; Tverjanovich, Andrey S. ; Bereznev, Sergei ; Mankova, Anna A. ; Parashchuk, Olga D. ; Vasilevsky, Ivan S. ; Ozheredov, Ilya A. ; Shkurinov, Alexander P. ; Bychkov, Eugene A. / GeTe2 Phase Change Material for Terahertz Devices with Reconfigurable Functionalities Using Optical Activation. In: ACS applied materials & interfaces. 2023 ; Vol. 15, No. 7. pp. 9638-9648.

BibTeX

@article{38e1d4d6053c49248242129e24e35f89,
title = "GeTe2 Phase Change Material for Terahertz Devices with Reconfigurable Functionalities Using Optical Activation",
abstract = "The phenomenon of phase change transition has been a fascinating research subject over decades due to a possibility of dynamically controlled materials properties, allowing the creation of optical devices with unique features. The present paper unravels the optical characteristics and terahertz (THz) dielectric permittivity of a novel phase change material (PCM), GeTe2, prepared by pulsed laser deposition (PLD) and their remarkable contrast in crystalline and amorphous states, in particular, a difference of 7 orders of magnitude in conductivity. The THz spectra were analyzed using the harmonic oscillator and Drude term. Using GeTe2 PLD films, we designed and prepared a THz metasurface in the form of periodic structure and revealed a possibility of tuning the THz resonance either by a thermal control or light-induced crystallization response, thus achieving the dynamic and tunable functionality of the metastructure. We propose controlling the state of metasurface by observing the intensity characteristics of the Raman peak of 155 cm-1. Density functional theory (DFT) modeling demonstrates that in the process of crystallization the mode intensity of 155 cm-1 assigned to Te-Te stretching in amorphous chain fragments decreases and disappears at full crystallization.",
keywords = "germanium ditelluride, terahertz radiation, phase change material, metamaterials, optically active materials, tunable photonics",
author = "Konnikova, {Maria R.} and Khomenko, {Maxim D.} and Tverjanovich, {Andrey S.} and Sergei Bereznev and Mankova, {Anna A.} and Parashchuk, {Olga D.} and Vasilevsky, {Ivan S.} and Ozheredov, {Ilya A.} and Shkurinov, {Alexander P.} and Bychkov, {Eugene A.}",
year = "2023",
month = feb,
day = "13",
doi = "10.1021/acsami.2c21678",
language = "English",
volume = "15",
pages = "9638--9648",
journal = "ACS applied materials & interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "7",

}

RIS

TY - JOUR

T1 - GeTe2 Phase Change Material for Terahertz Devices with Reconfigurable Functionalities Using Optical Activation

AU - Konnikova, Maria R.

AU - Khomenko, Maxim D.

AU - Tverjanovich, Andrey S.

AU - Bereznev, Sergei

AU - Mankova, Anna A.

AU - Parashchuk, Olga D.

AU - Vasilevsky, Ivan S.

AU - Ozheredov, Ilya A.

AU - Shkurinov, Alexander P.

AU - Bychkov, Eugene A.

PY - 2023/2/13

Y1 - 2023/2/13

N2 - The phenomenon of phase change transition has been a fascinating research subject over decades due to a possibility of dynamically controlled materials properties, allowing the creation of optical devices with unique features. The present paper unravels the optical characteristics and terahertz (THz) dielectric permittivity of a novel phase change material (PCM), GeTe2, prepared by pulsed laser deposition (PLD) and their remarkable contrast in crystalline and amorphous states, in particular, a difference of 7 orders of magnitude in conductivity. The THz spectra were analyzed using the harmonic oscillator and Drude term. Using GeTe2 PLD films, we designed and prepared a THz metasurface in the form of periodic structure and revealed a possibility of tuning the THz resonance either by a thermal control or light-induced crystallization response, thus achieving the dynamic and tunable functionality of the metastructure. We propose controlling the state of metasurface by observing the intensity characteristics of the Raman peak of 155 cm-1. Density functional theory (DFT) modeling demonstrates that in the process of crystallization the mode intensity of 155 cm-1 assigned to Te-Te stretching in amorphous chain fragments decreases and disappears at full crystallization.

AB - The phenomenon of phase change transition has been a fascinating research subject over decades due to a possibility of dynamically controlled materials properties, allowing the creation of optical devices with unique features. The present paper unravels the optical characteristics and terahertz (THz) dielectric permittivity of a novel phase change material (PCM), GeTe2, prepared by pulsed laser deposition (PLD) and their remarkable contrast in crystalline and amorphous states, in particular, a difference of 7 orders of magnitude in conductivity. The THz spectra were analyzed using the harmonic oscillator and Drude term. Using GeTe2 PLD films, we designed and prepared a THz metasurface in the form of periodic structure and revealed a possibility of tuning the THz resonance either by a thermal control or light-induced crystallization response, thus achieving the dynamic and tunable functionality of the metastructure. We propose controlling the state of metasurface by observing the intensity characteristics of the Raman peak of 155 cm-1. Density functional theory (DFT) modeling demonstrates that in the process of crystallization the mode intensity of 155 cm-1 assigned to Te-Te stretching in amorphous chain fragments decreases and disappears at full crystallization.

KW - germanium ditelluride

KW - terahertz radiation

KW - phase change material

KW - metamaterials

KW - optically active materials

KW - tunable photonics

UR - https://www.mendeley.com/catalogue/eeca62a1-0159-3af9-a7b1-5ea04ad79e99/

U2 - 10.1021/acsami.2c21678

DO - 10.1021/acsami.2c21678

M3 - Article

VL - 15

SP - 9638

EP - 9648

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

IS - 7

ER -

ID: 104731299