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Generic picture of the emission properties of III-nitride polariton laser diodes: Steady state and current modulation response. / Iorsh, Ivan; Glauser, Marlene; Rossbach, Georg; Levrat, Jacques; Cobet, Munise; Butt e, Rapha el; Grandjean, Nicolas; Kaliteevski, Mikhail A.; Abram, Richard A.; Kavokin, Alexey V.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 86, No. 12, 2012, p. 125308_1-11.

Research output: Contribution to journalArticle

Harvard

Iorsh, I, Glauser, M, Rossbach, G, Levrat, J, Cobet, M, Butt e, RE, Grandjean, N, Kaliteevski, MA, Abram, RA & Kavokin, AV 2012, 'Generic picture of the emission properties of III-nitride polariton laser diodes: Steady state and current modulation response', Physical Review B - Condensed Matter and Materials Physics, vol. 86, no. 12, pp. 125308_1-11. https://doi.org/10.1103/PhysRevB.86.125308

APA

Iorsh, I., Glauser, M., Rossbach, G., Levrat, J., Cobet, M., Butt e, R. E., Grandjean, N., Kaliteevski, M. A., Abram, R. A., & Kavokin, A. V. (2012). Generic picture of the emission properties of III-nitride polariton laser diodes: Steady state and current modulation response. Physical Review B - Condensed Matter and Materials Physics, 86(12), 125308_1-11. https://doi.org/10.1103/PhysRevB.86.125308

Vancouver

Iorsh I, Glauser M, Rossbach G, Levrat J, Cobet M, Butt e RE et al. Generic picture of the emission properties of III-nitride polariton laser diodes: Steady state and current modulation response. Physical Review B - Condensed Matter and Materials Physics. 2012;86(12):125308_1-11. https://doi.org/10.1103/PhysRevB.86.125308

Author

Iorsh, Ivan ; Glauser, Marlene ; Rossbach, Georg ; Levrat, Jacques ; Cobet, Munise ; Butt e, Rapha el ; Grandjean, Nicolas ; Kaliteevski, Mikhail A. ; Abram, Richard A. ; Kavokin, Alexey V. / Generic picture of the emission properties of III-nitride polariton laser diodes: Steady state and current modulation response. In: Physical Review B - Condensed Matter and Materials Physics. 2012 ; Vol. 86, No. 12. pp. 125308_1-11.

BibTeX

@article{fdaa48a4cb4f42baabb2098cb3b049d6,
title = "Generic picture of the emission properties of III-nitride polariton laser diodes: Steady state and current modulation response",
abstract = "The main emission characteristics of electrically driven polariton lasers based on planar GaN microcavities with embedded InGaN quantum wells are studied theoretically. The polariton emission dependence on pump current density is first modeled using a set of semiclassical Boltzmann equations for the exciton polaritons that are coupled to the rate equation describing the electron-hole plasma population. Two experimentally relevant pumping geometries are considered, namely the direct injection of electrons and holes into the strongly coupled microcavity region and intracavity optical pumping via an embedded light-emitting diode. The theoretical framework allows the determination of the minimum threshold current density Jthr,min as a function of lattice temperature and exciton-cavity photon detuning for the two pumping schemes. A Jthr,min value of 5 and 6 A cm−2 is derived for the direct injection scheme and for the intracavity optical pumping one, respectively, at room temperature at the optimum detuning. Then",
author = "Ivan Iorsh and Marlene Glauser and Georg Rossbach and Jacques Levrat and Munise Cobet and {Butt e}, {Rapha el} and Nicolas Grandjean and Kaliteevski, {Mikhail A.} and Abram, {Richard A.} and Kavokin, {Alexey V.}",
year = "2012",
doi = "10.1103/PhysRevB.86.125308",
language = "English",
volume = "86",
pages = "125308_1--11",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "12",

}

RIS

TY - JOUR

T1 - Generic picture of the emission properties of III-nitride polariton laser diodes: Steady state and current modulation response

AU - Iorsh, Ivan

AU - Glauser, Marlene

AU - Rossbach, Georg

AU - Levrat, Jacques

AU - Cobet, Munise

AU - Butt e, Rapha el

AU - Grandjean, Nicolas

AU - Kaliteevski, Mikhail A.

AU - Abram, Richard A.

AU - Kavokin, Alexey V.

PY - 2012

Y1 - 2012

N2 - The main emission characteristics of electrically driven polariton lasers based on planar GaN microcavities with embedded InGaN quantum wells are studied theoretically. The polariton emission dependence on pump current density is first modeled using a set of semiclassical Boltzmann equations for the exciton polaritons that are coupled to the rate equation describing the electron-hole plasma population. Two experimentally relevant pumping geometries are considered, namely the direct injection of electrons and holes into the strongly coupled microcavity region and intracavity optical pumping via an embedded light-emitting diode. The theoretical framework allows the determination of the minimum threshold current density Jthr,min as a function of lattice temperature and exciton-cavity photon detuning for the two pumping schemes. A Jthr,min value of 5 and 6 A cm−2 is derived for the direct injection scheme and for the intracavity optical pumping one, respectively, at room temperature at the optimum detuning. Then

AB - The main emission characteristics of electrically driven polariton lasers based on planar GaN microcavities with embedded InGaN quantum wells are studied theoretically. The polariton emission dependence on pump current density is first modeled using a set of semiclassical Boltzmann equations for the exciton polaritons that are coupled to the rate equation describing the electron-hole plasma population. Two experimentally relevant pumping geometries are considered, namely the direct injection of electrons and holes into the strongly coupled microcavity region and intracavity optical pumping via an embedded light-emitting diode. The theoretical framework allows the determination of the minimum threshold current density Jthr,min as a function of lattice temperature and exciton-cavity photon detuning for the two pumping schemes. A Jthr,min value of 5 and 6 A cm−2 is derived for the direct injection scheme and for the intracavity optical pumping one, respectively, at room temperature at the optimum detuning. Then

U2 - 10.1103/PhysRevB.86.125308

DO - 10.1103/PhysRevB.86.125308

M3 - Article

VL - 86

SP - 125308_1-11

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 12

ER -

ID: 5546814