Research output: Contribution to journal › Article › peer-review
GaAsPN core–shell nanowire-based red microLEDs overcoming the efficiency cliff problem. / Novikova, Kristina; Goltaev, Alexandr; Maksimova, Alina; Kaveev, Andrey; Fedorov, Vladimir; Kirilenko, Demid; Volosatova, Viktoria; Zubov, Fedor; Moiseev, Eduard; Pavlov, Alexander; Smirnov, Aliaksandr; Sharov, Vladislav; Mozharov, Alexey; Mukhin, Ivan.
In: Journal of Materials Chemistry C, Vol. 13, No. 45, 12.2025, p. 22741-22749.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - GaAsPN core–shell nanowire-based red microLEDs overcoming the efficiency cliff problem
AU - Novikova, Kristina
AU - Goltaev, Alexandr
AU - Maksimova, Alina
AU - Kaveev, Andrey
AU - Fedorov, Vladimir
AU - Kirilenko, Demid
AU - Volosatova, Viktoria
AU - Zubov, Fedor
AU - Moiseev, Eduard
AU - Pavlov, Alexander
AU - Smirnov, Aliaksandr
AU - Sharov, Vladislav
AU - Mozharov, Alexey
AU - Mukhin, Ivan
PY - 2025/12
Y1 - 2025/12
N2 - Light emitting diodes (LEDs) based on III-V semiconductors are in a great demand for many appli cations and tend to be miniaturized. However, with downscaling of planar LEDs, the surface... Light emitting diodes (LEDs) based on III-V semiconductors are in a great demand for many appli cations and tend to be miniaturized. However, with downscaling of planar LEDs, the surface states on the structure sidewalls, acting as nonradiative recombination centers, begin to play a significant role and deteriorate the device performance. The transition from planar to nanowire-based geometry helps to overcome this limitation. Here, we introduce a bottom-up microLED structure based on epitaxial GaP/GaAsPN/GaP nanowire arrays grown on low-cost Si(111) wafers. The active region demonstrates bright photoluminescence in the red spectral region while the radial p-i-n structure allows for electrical pumping. The opto-electrical characteristics and performance of the suggested microLEDs remain with the miniaturization of devices down to microscale equivalent lateral size. Moreover, we didn’t observe an efficiency cliff even for current density exceeding 300 A/cm 2 . The proposed architecture paves the way to a new generation of nanowire-based microLEDs.
AB - Light emitting diodes (LEDs) based on III-V semiconductors are in a great demand for many appli cations and tend to be miniaturized. However, with downscaling of planar LEDs, the surface... Light emitting diodes (LEDs) based on III-V semiconductors are in a great demand for many appli cations and tend to be miniaturized. However, with downscaling of planar LEDs, the surface states on the structure sidewalls, acting as nonradiative recombination centers, begin to play a significant role and deteriorate the device performance. The transition from planar to nanowire-based geometry helps to overcome this limitation. Here, we introduce a bottom-up microLED structure based on epitaxial GaP/GaAsPN/GaP nanowire arrays grown on low-cost Si(111) wafers. The active region demonstrates bright photoluminescence in the red spectral region while the radial p-i-n structure allows for electrical pumping. The opto-electrical characteristics and performance of the suggested microLEDs remain with the miniaturization of devices down to microscale equivalent lateral size. Moreover, we didn’t observe an efficiency cliff even for current density exceeding 300 A/cm 2 . The proposed architecture paves the way to a new generation of nanowire-based microLEDs.
UR - https://www.mendeley.com/catalogue/753509ab-98e1-30db-b622-061c2e321bf6/
U2 - 10.1039/d5tc01725d
DO - 10.1039/d5tc01725d
M3 - Article
VL - 13
SP - 22741
EP - 22749
JO - Journal of Materials Chemistry C
JF - Journal of Materials Chemistry C
SN - 2050-7526
IS - 45
ER -
ID: 144586449