Research output: Contribution to journal › Article › peer-review
Ga2Se3 Nanowires via Au-Assisted Heterovalent Exchange Reaction on GaAs. / Berto, Federico; Haghighian, Niloofar; Ferfolja, Katja ; Gardonio, Sandra ; Fanetti, Mattia; Mussi, Valentina ; Dubrovskii, Vladimir G. ; Shtrom, Igor V. ; Franciosi, Alfonso ; Rubini, Silvia.
In: Journal of Physical Chemistry C, Vol. 124, No. 32, 13.08.2020, p. 17783-17794.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Ga2Se3 Nanowires via Au-Assisted Heterovalent Exchange Reaction on GaAs
AU - Berto, Federico
AU - Haghighian, Niloofar
AU - Ferfolja, Katja
AU - Gardonio, Sandra
AU - Fanetti, Mattia
AU - Mussi, Valentina
AU - Dubrovskii, Vladimir G.
AU - Shtrom, Igor V.
AU - Franciosi, Alfonso
AU - Rubini, Silvia
N1 - Publisher Copyright: Copyright © 2020 American Chemical Society.
PY - 2020/8/13
Y1 - 2020/8/13
N2 - Out-of-plane Ga2Se3 nanowires are grown by molecular beam epitaxy via Au-assisted heterovalent exchange reaction on GaAs substrates in the absence of Ga deposition. It is shown that at a suitable temperature around 560 °C the Au-decorated GaAs substrate releases Ga atoms, which react with the incoming Se and feed the nanowire growth. The nanowire composition, crystal structure, and morphology are characterized by Raman spectroscopy and electron microscopy. The growth mechanism is investigated by X-ray photoelectron spectroscopy. We explore the growth parameter window and find an interesting effect of shortening of the nanowires after a certain maximum length. The nanowire growth is described within a diffusion transport model, which explains the nonmonotonic behavior of the nanowire length versus the growth parameters. Nanowire shortening is explained by the blocking of Ga supply from the GaAs substrate by thick, in-plane worm-like Ga2Se3 structures, which grow concomitantly with the nanowires, followed by backward diffusion of Ga atoms from the nanowires down to the substrate surface.
AB - Out-of-plane Ga2Se3 nanowires are grown by molecular beam epitaxy via Au-assisted heterovalent exchange reaction on GaAs substrates in the absence of Ga deposition. It is shown that at a suitable temperature around 560 °C the Au-decorated GaAs substrate releases Ga atoms, which react with the incoming Se and feed the nanowire growth. The nanowire composition, crystal structure, and morphology are characterized by Raman spectroscopy and electron microscopy. The growth mechanism is investigated by X-ray photoelectron spectroscopy. We explore the growth parameter window and find an interesting effect of shortening of the nanowires after a certain maximum length. The nanowire growth is described within a diffusion transport model, which explains the nonmonotonic behavior of the nanowire length versus the growth parameters. Nanowire shortening is explained by the blocking of Ga supply from the GaAs substrate by thick, in-plane worm-like Ga2Se3 structures, which grow concomitantly with the nanowires, followed by backward diffusion of Ga atoms from the nanowires down to the substrate surface.
KW - RAY PHOTOELECTRON-SPECTROSCOPY; EPITAXIAL-GROWTH; VACANCY; IN2SE3; GOLD; NANOSTRUCTURES; SEMICONDUCTORS; PHOTOEMISSION; ANISOTROPY; INTERFACE
KW - ANISOTROPY
KW - EPITAXIAL-GROWTH
KW - GOLD
KW - IN2SE3
KW - INTERFACE
KW - NANOSTRUCTURES
KW - PHOTOEMISSION
KW - RAY PHOTOELECTRON-SPECTROSCOPY
KW - SEMICONDUCTORS
KW - VACANCY
UR - http://www.scopus.com/inward/record.url?scp=85091027342&partnerID=8YFLogxK
UR - https://www.mendeley.com/catalogue/42eaae60-1d55-30ed-84f4-823554e76298/
U2 - 10.1021/acs.jpcc.0c03216
DO - 10.1021/acs.jpcc.0c03216
M3 - Article
VL - 124
SP - 17783
EP - 17794
JO - Journal of Physical Chemistry C
JF - Journal of Physical Chemistry C
SN - 1932-7447
IS - 32
ER -
ID: 70923638