Fullerenes as Passivating Agents of the Surfaces of Semiconductor Photo- and Light-Emmiting Diodes

In: Russian Journal of Physical Chemistry A, Vol. 85, No. 8, 2011, p. 1411-1415.

Research output: Contribution to journal › Article

Sherstnev, VV, Charykov, NA, Semenov, KN & Keskinov, VA 2011, 'Fullerenes as Passivating Agents of the Surfaces of Semiconductor Photo- and Light-Emmiting Diodes', Russian Journal of Physical Chemistry A, vol. 85, no. 8, pp. 1411-1415.

Sherstnev, V. V., Charykov, N. A., Semenov, K. N., & Keskinov, V. A. (2011). Fullerenes as Passivating Agents of the Surfaces of Semiconductor Photo- and Light-Emmiting Diodes. Russian Journal of Physical Chemistry A, 85(8), 1411-1415.

Sherstnev, V.V. ; Charykov, N.A. ; Semenov, K.N. ; Keskinov, V.A. / Fullerenes as Passivating Agents of the Surfaces of Semiconductor Photo- and Light-Emmiting Diodes. In: Russian Journal of Physical Chemistry A. 2011 ; Vol. 85, No. 8. pp. 1411-1415.

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title = "Fullerenes as Passivating Agents of the Surfaces of Semiconductor Photo- and Light-Emmiting Diodes",

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