Free Energy of Nucleus Formation during Growth of III-V Semiconductor Nanowires

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Free Energy of Nucleus Formation during Growth of III-V Semiconductor Nanowires. / Dubrovskii, V. G.; Sokolovskii, A. S. ; Shtrom, I. V. .

In: Technical Physics Letters, Vol. 46, No. 9, 01.09.2020, p. 889-892.

Research output: Contribution to journal › Article › peer-review

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Dubrovskii, V. G. ; Sokolovskii, A. S. ; Shtrom, I. V. . / Free Energy of Nucleus Formation during Growth of III-V Semiconductor Nanowires. In: Technical Physics Letters. 2020 ; Vol. 46, No. 9. pp. 889-892.

BibTeX

@article{b54133131c3e4ddebb8d0701ceb64a47,

title = "Free Energy of Nucleus Formation during Growth of III-V Semiconductor Nanowires",

abstract = "An expression for the free energy of nucleus formation from liquid phase of a catalyst during growth of III–V semiconductor nanowires (NWs) via the vapor–liquid–solid (VLS) mechanism has been derived with allowance for depletion of the number of atoms of the group V element (As) in the drop as a result of the island growth during As deposition from the gas–vapor phase. Various regimes of island formation, including a regime with growth arrest at small As concentrations in the drop have been theoretically studied. It is established that the growth arrest takes place when the As concentration decreases to an equilibrium level. The obtained results can be used in simulations of the growth kinetics of III–V semiconductor NWs, statistics of their nucleation, and NW length distribution functions, as well as for modeling of the crystalline phase growth and doping processes.",

keywords = "III–V nanowires, nucleus, monocentric nucleation, free energy, PHASE, III-V nanowires, MECHANISM",

author = "Dubrovskii, {V. G.} and Sokolovskii, {A. S.} and Shtrom, {I. V.}",

note = "Publisher Copyright: {\textcopyright} 2020, Pleiades Publishing, Ltd.",

year = "2020",

month = sep,

day = "1",

doi = "10.1134/S1063785020090187",

language = "English",

volume = "46",

pages = "889--892",

journal = "Technical Physics Letters",

issn = "1063-7850",

publisher = "МАИК {"}Наука/Интерпериодика{"}",

number = "9",

}

RIS

TY - JOUR

T1 - Free Energy of Nucleus Formation during Growth of III-V Semiconductor Nanowires

AU - Dubrovskii, V. G.

AU - Sokolovskii, A. S.

AU - Shtrom, I. V.

PY - 2020/9/1

Y1 - 2020/9/1

N2 - An expression for the free energy of nucleus formation from liquid phase of a catalyst during growth of III–V semiconductor nanowires (NWs) via the vapor–liquid–solid (VLS) mechanism has been derived with allowance for depletion of the number of atoms of the group V element (As) in the drop as a result of the island growth during As deposition from the gas–vapor phase. Various regimes of island formation, including a regime with growth arrest at small As concentrations in the drop have been theoretically studied. It is established that the growth arrest takes place when the As concentration decreases to an equilibrium level. The obtained results can be used in simulations of the growth kinetics of III–V semiconductor NWs, statistics of their nucleation, and NW length distribution functions, as well as for modeling of the crystalline phase growth and doping processes.

AB - An expression for the free energy of nucleus formation from liquid phase of a catalyst during growth of III–V semiconductor nanowires (NWs) via the vapor–liquid–solid (VLS) mechanism has been derived with allowance for depletion of the number of atoms of the group V element (As) in the drop as a result of the island growth during As deposition from the gas–vapor phase. Various regimes of island formation, including a regime with growth arrest at small As concentrations in the drop have been theoretically studied. It is established that the growth arrest takes place when the As concentration decreases to an equilibrium level. The obtained results can be used in simulations of the growth kinetics of III–V semiconductor NWs, statistics of their nucleation, and NW length distribution functions, as well as for modeling of the crystalline phase growth and doping processes.

KW - III–V nanowires

KW - nucleus

KW - monocentric nucleation

KW - free energy

KW - PHASE

KW - III-V nanowires

KW - MECHANISM

UR - http://www.scopus.com/inward/record.url?scp=85092378846&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/fb4040b0-6f82-3ff1-9683-511de075a70f/

U2 - 10.1134/S1063785020090187

DO - 10.1134/S1063785020090187

M3 - Article

VL - 46

SP - 889

EP - 892

JO - Technical Physics Letters

JF - Technical Physics Letters

SN - 1063-7850

IS - 9

ER -

ID: 70923714