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Forming of thin layers on a basis of narrow-gap CdHgTe in the semiconductor-electrolyte systems. / Яфясов, Адиль Абдул Меликович.

2000.

Research output: Contribution to conference › Abstract › peer-review

Harvard

Яфясов, ААМ 2000, 'Forming of thin layers on a basis of narrow-gap CdHgTe in the semiconductor-electrolyte systems.'.

APA

Яфясов, А. А. М. (2000). Forming of thin layers on a basis of narrow-gap CdHgTe in the semiconductor-electrolyte systems..

Vancouver

Яфясов ААМ. Forming of thin layers on a basis of narrow-gap CdHgTe in the semiconductor-electrolyte systems.. 2000.

Author

Яфясов, Адиль Абдул Меликович. / Forming of thin layers on a basis of narrow-gap CdHgTe in the semiconductor-electrolyte systems.

BibTeX

@conference{c4b7b283370a4103819e862d7da39c22,
title = "Forming of thin layers on a basis of narrow-gap CdHgTe in the semiconductor-electrolyte systems.",
author = "Яфясов, {Адиль Абдул Меликович}",
year = "2000",
language = "English",

}

RIS

TY - CONF

T1 - Forming of thin layers on a basis of narrow-gap CdHgTe in the semiconductor-electrolyte systems.

AU - Яфясов, Адиль Абдул Меликович

PY - 2000

Y1 - 2000

M3 - Abstract

ER -

ID: 73308787