Standard

Formation of wurtzite sections in self-catalyzed GaP nanowires by droplet consumption. / Fedorov, V. V.; Dvoretckaia, L. N.; Kirilenko, D. A.; Mukhin, I. S.; Dubrovskii, V. G.

In: Nanotechnology, Vol. 32, No. 49, 495601, 03.12.2021.

Research output: Contribution to journal › Article › peer-review

Harvard

Fedorov, VV, Dvoretckaia, LN, Kirilenko, DA, Mukhin, IS & Dubrovskii, VG 2021, 'Formation of wurtzite sections in self-catalyzed GaP nanowires by droplet consumption', Nanotechnology, vol. 32, no. 49, 495601. https://doi.org/10.1088/1361-6528/ac20fe

APA

Fedorov, V. V., Dvoretckaia, L. N., Kirilenko, D. A., Mukhin, I. S., & Dubrovskii, V. G. (2021). Formation of wurtzite sections in self-catalyzed GaP nanowires by droplet consumption. Nanotechnology, 32(49), [495601]. https://doi.org/10.1088/1361-6528/ac20fe

Vancouver

Fedorov VV, Dvoretckaia LN, Kirilenko DA, Mukhin IS, Dubrovskii VG. Formation of wurtzite sections in self-catalyzed GaP nanowires by droplet consumption. Nanotechnology. 2021 Dec 3;32(49). 495601. https://doi.org/10.1088/1361-6528/ac20fe

Author

Fedorov, V. V. ; Dvoretckaia, L. N. ; Kirilenko, D. A. ; Mukhin, I. S. ; Dubrovskii, V. G. / Formation of wurtzite sections in self-catalyzed GaP nanowires by droplet consumption. In: Nanotechnology. 2021 ; Vol. 32, No. 49.

BibTeX

@article{311210a2bdf043c8a2c2cf11e6efd4d4,
title = "Formation of wurtzite sections in self-catalyzed GaP nanowires by droplet consumption",
abstract = "Wurtzite GaP nanowires are interesting for the direct bandgap engineering and can be used as templates for further growth of hexagonal Si shells. Most wurtzite GaP nanowires have previously been obtained with Au catalysts. Here, we show that long (similar to 500 nm) wurtzite sections are formed in the top parts of self-catalyzed GaP nanowires grown by molecular beam epitaxy on Si(111) substrates in the droplet consumption stage, which is achieved by abruptly increasing the atomic V/III flux ratio from 2 to 3. We investigate the temperature dependence of the length of wurtzite sections and show that the longest sections are obtained at 610 degrees C. A supporting model explains the observed trends using a phase diagram of GaP nanowires, where the wurtzite phase is formed within a certain range of the droplet contact angles. The optimal growth temperature for growing wurtzite nanowires corresponds to the largest diffusion length of Ga adatoms, which helps to maintain the required contact angle for the longest time.",
keywords = "contact angle, Ga diffusion, GaP nanowires, wurtzite phase, BEHAVIOR, CONTACT-ANGLE, GROWTH, SILICON",
author = "Fedorov, {V. V.} and Dvoretckaia, {L. N.} and Kirilenko, {D. A.} and Mukhin, {I. S.} and Dubrovskii, {V. G.}",
note = "{\textcopyright} 2021 IOP Publishing Ltd.",
year = "2021",
month = dec,
day = "3",
doi = "10.1088/1361-6528/ac20fe",
language = "English",
volume = "32",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "IOP Publishing Ltd.",
number = "49",

}

RIS

TY - JOUR

T1 - Formation of wurtzite sections in self-catalyzed GaP nanowires by droplet consumption

AU - Fedorov, V. V.

AU - Dvoretckaia, L. N.

AU - Kirilenko, D. A.

AU - Mukhin, I. S.

AU - Dubrovskii, V. G.

N1 - © 2021 IOP Publishing Ltd.

PY - 2021/12/3

Y1 - 2021/12/3

N2 - Wurtzite GaP nanowires are interesting for the direct bandgap engineering and can be used as templates for further growth of hexagonal Si shells. Most wurtzite GaP nanowires have previously been obtained with Au catalysts. Here, we show that long (similar to 500 nm) wurtzite sections are formed in the top parts of self-catalyzed GaP nanowires grown by molecular beam epitaxy on Si(111) substrates in the droplet consumption stage, which is achieved by abruptly increasing the atomic V/III flux ratio from 2 to 3. We investigate the temperature dependence of the length of wurtzite sections and show that the longest sections are obtained at 610 degrees C. A supporting model explains the observed trends using a phase diagram of GaP nanowires, where the wurtzite phase is formed within a certain range of the droplet contact angles. The optimal growth temperature for growing wurtzite nanowires corresponds to the largest diffusion length of Ga adatoms, which helps to maintain the required contact angle for the longest time.

AB - Wurtzite GaP nanowires are interesting for the direct bandgap engineering and can be used as templates for further growth of hexagonal Si shells. Most wurtzite GaP nanowires have previously been obtained with Au catalysts. Here, we show that long (similar to 500 nm) wurtzite sections are formed in the top parts of self-catalyzed GaP nanowires grown by molecular beam epitaxy on Si(111) substrates in the droplet consumption stage, which is achieved by abruptly increasing the atomic V/III flux ratio from 2 to 3. We investigate the temperature dependence of the length of wurtzite sections and show that the longest sections are obtained at 610 degrees C. A supporting model explains the observed trends using a phase diagram of GaP nanowires, where the wurtzite phase is formed within a certain range of the droplet contact angles. The optimal growth temperature for growing wurtzite nanowires corresponds to the largest diffusion length of Ga adatoms, which helps to maintain the required contact angle for the longest time.

KW - contact angle

KW - Ga diffusion

KW - GaP nanowires

KW - wurtzite phase

KW - BEHAVIOR

KW - CONTACT-ANGLE

KW - GROWTH

KW - SILICON

UR - http://www.scopus.com/inward/record.url?scp=85115239348&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/85c576d0-dd78-342e-8425-c9783a8c94d3/

U2 - 10.1088/1361-6528/ac20fe

DO - 10.1088/1361-6528/ac20fe

M3 - Article

C2 - 34433149

AN - SCOPUS:85115239348

VL - 32

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 49

M1 - 495601

ER -

ID: 88747870