Standard

Formation of defects in the oxide layer of ion-irradiated Si/SiO2 structures. / Baraban, A. P.; Miloglyadova, L. V.

In: Technical Physics, Vol. 47, No. 5, 01.05.2002, p. 569-573.

Research output: Contribution to journal › Article › peer-review

Harvard

Baraban, AP & Miloglyadova, LV 2002, 'Formation of defects in the oxide layer of ion-irradiated Si/SiO2 structures', Technical Physics, vol. 47, no. 5, pp. 569-573. https://doi.org/10.1134/1.1479984

APA

Baraban, A. P., & Miloglyadova, L. V. (2002). Formation of defects in the oxide layer of ion-irradiated Si/SiO2 structures. Technical Physics, 47(5), 569-573. https://doi.org/10.1134/1.1479984

Vancouver

Baraban AP, Miloglyadova LV. Formation of defects in the oxide layer of ion-irradiated Si/SiO2 structures. Technical Physics. 2002 May 1;47(5):569-573. https://doi.org/10.1134/1.1479984

Author

Baraban, A. P. ; Miloglyadova, L. V. / Formation of defects in the oxide layer of ion-irradiated Si/SiO2 structures. In: Technical Physics. 2002 ; Vol. 47, No. 5. pp. 569-573.

BibTeX

@article{a75de56f6c574113b5c95413ec58414d,
title = "Formation of defects in the oxide layer of ion-irradiated Si/SiO2 structures",
abstract = "Electroluminescence and high-frequency voltage-capacitance methods are used to study Si/SiO2 structures obtained by thermal oxidation of K{\'E}F-5 (100)Si wafers at 950°C in wet oxygen (oxide thickness 250 nm). The structures are irradiated by 130-keV argon ions with doses in the range of 1013-3.2 × 1017 cm-2. A correlation between the origin, properties, and formation mechanism of implantation-induced defects in the oxide layer is established, and a model of defect formation is proposed.",
author = "Baraban, {A. P.} and Miloglyadova, {L. V.}",
year = "2002",
month = may,
day = "1",
doi = "10.1134/1.1479984",
language = "English",
volume = "47",
pages = "569--573",
journal = "Technical Physics",
issn = "1063-7842",
publisher = "Pleiades Publishing",
number = "5",

}

RIS

TY - JOUR

T1 - Formation of defects in the oxide layer of ion-irradiated Si/SiO2 structures

AU - Baraban, A. P.

AU - Miloglyadova, L. V.

PY - 2002/5/1

Y1 - 2002/5/1

N2 - Electroluminescence and high-frequency voltage-capacitance methods are used to study Si/SiO2 structures obtained by thermal oxidation of KÉF-5 (100)Si wafers at 950°C in wet oxygen (oxide thickness 250 nm). The structures are irradiated by 130-keV argon ions with doses in the range of 1013-3.2 × 1017 cm-2. A correlation between the origin, properties, and formation mechanism of implantation-induced defects in the oxide layer is established, and a model of defect formation is proposed.

AB - Electroluminescence and high-frequency voltage-capacitance methods are used to study Si/SiO2 structures obtained by thermal oxidation of KÉF-5 (100)Si wafers at 950°C in wet oxygen (oxide thickness 250 nm). The structures are irradiated by 130-keV argon ions with doses in the range of 1013-3.2 × 1017 cm-2. A correlation between the origin, properties, and formation mechanism of implantation-induced defects in the oxide layer is established, and a model of defect formation is proposed.

UR - http://www.scopus.com/inward/record.url?scp=0036015872&partnerID=8YFLogxK

U2 - 10.1134/1.1479984

DO - 10.1134/1.1479984

M3 - Article

AN - SCOPUS:0036015872

VL - 47

SP - 569

EP - 573

JO - Technical Physics

JF - Technical Physics

SN - 1063-7842

IS - 5

ER -

ID: 41086325