Research output: Contribution to journal › Article › peer-review
Formation of Cu2O and ZnO Crystal Layers by Magnetron Assisted Sputtering and Their Optical Characterization. / Агекян, Вадим Фадеевич; Борисов, Евгений Вадимович; Гудовских, Александр; Кудряшов, Дмитрий; Монастыренко, Анатолий; Серов, Алексей Юрьевич; Философов, Николай Глебович.
In: Semiconductors, Vol. 52, No. 3, 03.2018, p. 383-389.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Formation of Cu2O and ZnO Crystal Layers by Magnetron Assisted Sputtering and Their Optical Characterization
AU - Агекян, Вадим Фадеевич
AU - Борисов, Евгений Вадимович
AU - Гудовских, Александр
AU - Кудряшов, Дмитрий
AU - Монастыренко, Анатолий
AU - Серов, Алексей Юрьевич
AU - Философов, Николай Глебович
N1 - Funding Information: The study was supported by the Russian Foundation for Basic Research, project no. 15-08-06645A, and St. Petersburg State University, research subject no. 11.52.454.2016. When performing optical measurements, equipment of Center for Optical and Laser Material Research in SPbU was used.
PY - 2018/3
Y1 - 2018/3
N2 - Copper (I) oxide and zinc oxide films are formed on silicon and glassy quartz substrates by magnetron assisted sputtering. The thickness of the films is tens and hundreds of nanometers. The films are grown at different substrate temperatures and different oxygen pressures in the working chamber. The film samples are studied by the X-ray diffraction technique, scanning electron microscopy, and optical methods. It is established that an increase in the substrate temperature yields a change in the surface morphology of copper (I) oxide films towards the formation of well-pronounced crystallites. The reflectance and Raman spectra suggest that the quality of such films is close to that of bulk Cu2O crystals produced by the oxidation of copper. As concerns ZnO films, an increase in the substrate temperature and an increase in the partial oxygen pressure make it possible to produce films, for which a sharp exciton structure is observed in the reflectance spectra and the emission of excitons bound at donors is observed in the luminescence spectra.
AB - Copper (I) oxide and zinc oxide films are formed on silicon and glassy quartz substrates by magnetron assisted sputtering. The thickness of the films is tens and hundreds of nanometers. The films are grown at different substrate temperatures and different oxygen pressures in the working chamber. The film samples are studied by the X-ray diffraction technique, scanning electron microscopy, and optical methods. It is established that an increase in the substrate temperature yields a change in the surface morphology of copper (I) oxide films towards the formation of well-pronounced crystallites. The reflectance and Raman spectra suggest that the quality of such films is close to that of bulk Cu2O crystals produced by the oxidation of copper. As concerns ZnO films, an increase in the substrate temperature and an increase in the partial oxygen pressure make it possible to produce films, for which a sharp exciton structure is observed in the reflectance spectra and the emission of excitons bound at donors is observed in the luminescence spectra.
KW - EXCITON
KW - FILMS
KW - TEMPERATURE
UR - http://www.scopus.com/inward/record.url?scp=85043483168&partnerID=8YFLogxK
U2 - 10.1134/S1063782618030028
DO - 10.1134/S1063782618030028
M3 - Article
VL - 52
SP - 383
EP - 389
JO - Semiconductors
JF - Semiconductors
SN - 1063-7826
IS - 3
ER -
ID: 19212370