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Fine core structure and spectral luminescence features of freshly introduced dislocations in Fe-doped GaN. / Shapenkov, S.; Vyvenko, O.; Ubyivovk, E.; Mikhailovskii, V.

In: Journal of Applied Physics, Vol. 131, No. 12, 125707, 28.03.2022.

Research output: Contribution to journal › Article › peer-review

Harvard

Shapenkov, S, Vyvenko, O, Ubyivovk, E & Mikhailovskii, V 2022, 'Fine core structure and spectral luminescence features of freshly introduced dislocations in Fe-doped GaN', Journal of Applied Physics, vol. 131, no. 12, 125707. https://doi.org/10.1063/5.0080381

APA

Shapenkov, S., Vyvenko, O., Ubyivovk, E., & Mikhailovskii, V. (2022). Fine core structure and spectral luminescence features of freshly introduced dislocations in Fe-doped GaN. Journal of Applied Physics, 131(12), [125707]. https://doi.org/10.1063/5.0080381

Vancouver

Shapenkov S, Vyvenko O, Ubyivovk E, Mikhailovskii V. Fine core structure and spectral luminescence features of freshly introduced dislocations in Fe-doped GaN. Journal of Applied Physics. 2022 Mar 28;131(12). 125707. https://doi.org/10.1063/5.0080381

Author

Shapenkov, S. ; Vyvenko, O. ; Ubyivovk, E. ; Mikhailovskii, V. / Fine core structure and spectral luminescence features of freshly introduced dislocations in Fe-doped GaN. In: Journal of Applied Physics. 2022 ; Vol. 131, No. 12.

BibTeX

@article{ae536726c7144b20b6736d3abc791982,
title = "Fine core structure and spectral luminescence features of freshly introduced dislocations in Fe-doped GaN",
abstract = "Dislocations introduced by Vickers tip microindentation of an a-plane free-standing semi-insulating Fe-doped GaN halide vapor phase epitaxy (HVPE) crystal were investigated by means of cathodoluminescence and scanning transmission electron microscopy techniques. Detailed combined analyses of both spectral properties and the core structure of the introduced a-screw dislocations revealed that Fe-doped GaN exhibit not only dislocation-bound emission at ∼3.35 eV of perfect a-screw dislocations previously found in such kind of samples but also luminescent bands at 3.1-3.2 and 3.3 eV due to dissociated a-screw dislocations and extended dislocation nodes previously observed only in low-resistance n-GaN. For the first time, all these luminescent bands were observed together in the same sample. Structural studies revealed the coexistence of the dislocations with the dissociated and the perfect core as well as with extended dislocation nodes, thus establishing a correlation between previously observed luminescence bands and a fine dislocation core structure.",
keywords = "SCREW DISLOCATIONS, WURTZITE, DEFORMATION",
author = "S. Shapenkov and O. Vyvenko and E. Ubyivovk and V. Mikhailovskii",
note = "Publisher Copyright: {\textcopyright} 2022 Author(s).",
year = "2022",
month = mar,
day = "28",
doi = "10.1063/5.0080381",
language = "English",
volume = "131",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics",
number = "12",

}

RIS

TY - JOUR

T1 - Fine core structure and spectral luminescence features of freshly introduced dislocations in Fe-doped GaN

AU - Shapenkov, S.

AU - Vyvenko, O.

AU - Ubyivovk, E.

AU - Mikhailovskii, V.

N1 - Publisher Copyright: © 2022 Author(s).

PY - 2022/3/28

Y1 - 2022/3/28

N2 - Dislocations introduced by Vickers tip microindentation of an a-plane free-standing semi-insulating Fe-doped GaN halide vapor phase epitaxy (HVPE) crystal were investigated by means of cathodoluminescence and scanning transmission electron microscopy techniques. Detailed combined analyses of both spectral properties and the core structure of the introduced a-screw dislocations revealed that Fe-doped GaN exhibit not only dislocation-bound emission at ∼3.35 eV of perfect a-screw dislocations previously found in such kind of samples but also luminescent bands at 3.1-3.2 and 3.3 eV due to dissociated a-screw dislocations and extended dislocation nodes previously observed only in low-resistance n-GaN. For the first time, all these luminescent bands were observed together in the same sample. Structural studies revealed the coexistence of the dislocations with the dissociated and the perfect core as well as with extended dislocation nodes, thus establishing a correlation between previously observed luminescence bands and a fine dislocation core structure.

AB - Dislocations introduced by Vickers tip microindentation of an a-plane free-standing semi-insulating Fe-doped GaN halide vapor phase epitaxy (HVPE) crystal were investigated by means of cathodoluminescence and scanning transmission electron microscopy techniques. Detailed combined analyses of both spectral properties and the core structure of the introduced a-screw dislocations revealed that Fe-doped GaN exhibit not only dislocation-bound emission at ∼3.35 eV of perfect a-screw dislocations previously found in such kind of samples but also luminescent bands at 3.1-3.2 and 3.3 eV due to dissociated a-screw dislocations and extended dislocation nodes previously observed only in low-resistance n-GaN. For the first time, all these luminescent bands were observed together in the same sample. Structural studies revealed the coexistence of the dislocations with the dissociated and the perfect core as well as with extended dislocation nodes, thus establishing a correlation between previously observed luminescence bands and a fine dislocation core structure.

KW - SCREW DISLOCATIONS

KW - WURTZITE

KW - DEFORMATION

UR - http://www.scopus.com/inward/record.url?scp=85127641658&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/a82ce21e-5c40-3d0e-9b66-824c07d8c1fc/

U2 - 10.1063/5.0080381

DO - 10.1063/5.0080381

M3 - Article

AN - SCOPUS:85127641658

VL - 131

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 12

M1 - 125707

ER -

ID: 94440180