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Field Ion Sources for Research and Modification of the Structure of Amorphous and Crystalline Materials. / Петров, Юрий Владимирович; Вывенко, Олег Федорович.

In: Crystallography Reports, Vol. 69, No. 1, 16.04.2024, p. 2-15.

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@article{5613fed578dc44d48c584bd915366abc,
title = "Field Ion Sources for Research and Modification of the Structure of Amorphous and Crystalline Materials",
abstract = "Abstract: Systems with a focused ion beam, using gas field ion sources, are described. The principles of operation and ways of formation of these sources, in which the effective ionization region is determined by sizes of a single atom, are considered in the historical context. The described systems have a wide range of applications, both in the field of scanning ion microscopy in combination with various analytical methods and in the field of high-resolution modification of electrical, optical, magnetic, and other properties of materials. This modification, based on ion-induced changes in the structure of material, is most pronounced in crystalline semiconductors, superconductors, and magnets.",
author = "Петров, {Юрий Владимирович} and Вывенко, {Олег Федорович}",
year = "2024",
month = apr,
day = "16",
doi = "10.1134/s1063774523601193",
language = "English",
volume = "69",
pages = "2--15",
journal = "Crystallography Reports",
issn = "1063-7745",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "1",

}

RIS

TY - JOUR

T1 - Field Ion Sources for Research and Modification of the Structure of Amorphous and Crystalline Materials

AU - Петров, Юрий Владимирович

AU - Вывенко, Олег Федорович

PY - 2024/4/16

Y1 - 2024/4/16

N2 - Abstract: Systems with a focused ion beam, using gas field ion sources, are described. The principles of operation and ways of formation of these sources, in which the effective ionization region is determined by sizes of a single atom, are considered in the historical context. The described systems have a wide range of applications, both in the field of scanning ion microscopy in combination with various analytical methods and in the field of high-resolution modification of electrical, optical, magnetic, and other properties of materials. This modification, based on ion-induced changes in the structure of material, is most pronounced in crystalline semiconductors, superconductors, and magnets.

AB - Abstract: Systems with a focused ion beam, using gas field ion sources, are described. The principles of operation and ways of formation of these sources, in which the effective ionization region is determined by sizes of a single atom, are considered in the historical context. The described systems have a wide range of applications, both in the field of scanning ion microscopy in combination with various analytical methods and in the field of high-resolution modification of electrical, optical, magnetic, and other properties of materials. This modification, based on ion-induced changes in the structure of material, is most pronounced in crystalline semiconductors, superconductors, and magnets.

UR - https://www.mendeley.com/catalogue/be51bcce-9fe0-3668-8531-9f9769ff54f9/

U2 - 10.1134/s1063774523601193

DO - 10.1134/s1063774523601193

M3 - Article

VL - 69

SP - 2

EP - 15

JO - Crystallography Reports

JF - Crystallography Reports

SN - 1063-7745

IS - 1

ER -

ID: 118853652