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Extended core structure and luminescence of a-screw dislocations in GaN. / Medvedev, O. S.; Vyvenko, O. F.; Ubyivovk, E. V.; Shapenkov, S. V.; Seibt, M.

In: Journal of Physics: Conference Series, Vol. 1190, No. 1, 012006, 23.05.2019.

Research output: Contribution to journal › Conference article › peer-review

Harvard

Medvedev, OS, Vyvenko, OF, Ubyivovk, EV, Shapenkov, SV & Seibt, M 2019, 'Extended core structure and luminescence of a-screw dislocations in GaN', Journal of Physics: Conference Series, vol. 1190, no. 1, 012006. https://doi.org/10.1088/1742-6596/1190/1/012006

APA

Medvedev, O. S., Vyvenko, O. F., Ubyivovk, E. V., Shapenkov, S. V., & Seibt, M. (2019). Extended core structure and luminescence of a-screw dislocations in GaN. Journal of Physics: Conference Series, 1190(1), [012006]. https://doi.org/10.1088/1742-6596/1190/1/012006

Vancouver

Medvedev OS, Vyvenko OF, Ubyivovk EV, Shapenkov SV, Seibt M. Extended core structure and luminescence of a-screw dislocations in GaN. Journal of Physics: Conference Series. 2019 May 23;1190(1). 012006. https://doi.org/10.1088/1742-6596/1190/1/012006

Author

Medvedev, O. S. ; Vyvenko, O. F. ; Ubyivovk, E. V. ; Shapenkov, S. V. ; Seibt, M. / Extended core structure and luminescence of a-screw dislocations in GaN. In: Journal of Physics: Conference Series. 2019 ; Vol. 1190, No. 1.

BibTeX

@article{2813a2ec842a4b9e8b87d91c9c8c9275,
title = "Extended core structure and luminescence of a-screw dislocations in GaN",
abstract = "Straight segments of a-screw dislocations introduced by scratching of basal (0001) of intentionally undoped low-ohmic GaN radiate a doublet of narrow luminescent lines in the spectral region at about 3.1-3.2 eV while the dislocation intersection points possess luminescence band at about 3.3 eV. Transmission electron microscopy reveals that the dislocation cores are dissociated into two 300 partials separated by stacking fault (SF) ribbon with the width of 4-6 nm width and that the dislocation nodes contain extended SF of sizes of 25-30 nm. Dislocation-related luminescence (DRL) is ascribed to exciton bound by the states of partial dislocation cores and of SF quantum well. The increase of the SF lateral sizes is assumed to cause the DRL spectral shift between straight dislocations and their nodes due to the system dimensionality transition from 1D to 2D respectively.",
author = "Medvedev, {O. S.} and Vyvenko, {O. F.} and Ubyivovk, {E. V.} and Shapenkov, {S. V.} and M. Seibt",
year = "2019",
month = may,
day = "23",
doi = "10.1088/1742-6596/1190/1/012006",
language = "English",
volume = "1190",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",
note = "19th International Conference on Extended Defects in Semiconductors, EDS 2018 ; Conference date: 24-06-2018 Through 29-06-2018",

}

RIS

TY - JOUR

T1 - Extended core structure and luminescence of a-screw dislocations in GaN

AU - Medvedev, O. S.

AU - Vyvenko, O. F.

AU - Ubyivovk, E. V.

AU - Shapenkov, S. V.

AU - Seibt, M.

PY - 2019/5/23

Y1 - 2019/5/23

N2 - Straight segments of a-screw dislocations introduced by scratching of basal (0001) of intentionally undoped low-ohmic GaN radiate a doublet of narrow luminescent lines in the spectral region at about 3.1-3.2 eV while the dislocation intersection points possess luminescence band at about 3.3 eV. Transmission electron microscopy reveals that the dislocation cores are dissociated into two 300 partials separated by stacking fault (SF) ribbon with the width of 4-6 nm width and that the dislocation nodes contain extended SF of sizes of 25-30 nm. Dislocation-related luminescence (DRL) is ascribed to exciton bound by the states of partial dislocation cores and of SF quantum well. The increase of the SF lateral sizes is assumed to cause the DRL spectral shift between straight dislocations and their nodes due to the system dimensionality transition from 1D to 2D respectively.

AB - Straight segments of a-screw dislocations introduced by scratching of basal (0001) of intentionally undoped low-ohmic GaN radiate a doublet of narrow luminescent lines in the spectral region at about 3.1-3.2 eV while the dislocation intersection points possess luminescence band at about 3.3 eV. Transmission electron microscopy reveals that the dislocation cores are dissociated into two 300 partials separated by stacking fault (SF) ribbon with the width of 4-6 nm width and that the dislocation nodes contain extended SF of sizes of 25-30 nm. Dislocation-related luminescence (DRL) is ascribed to exciton bound by the states of partial dislocation cores and of SF quantum well. The increase of the SF lateral sizes is assumed to cause the DRL spectral shift between straight dislocations and their nodes due to the system dimensionality transition from 1D to 2D respectively.

UR - http://www.scopus.com/inward/record.url?scp=85067058923&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/1190/1/012006

DO - 10.1088/1742-6596/1190/1/012006

M3 - Conference article

AN - SCOPUS:85067058923

VL - 1190

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012006

T2 - 19th International Conference on Extended Defects in Semiconductors, EDS 2018

Y2 - 24 June 2018 through 29 June 2018

ER -

ID: 43319904