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Excitons in nitride heterostructures: From zero- to one-dimensional behavior. / Rosales, D.; Bretagnon, T.; Gil, B.; Kahouli, A.; Brault, J.; Damilano, B.; Massies, J.; Durnev, M.V.; Kavokin, A.V.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 88, No. 12, 2013, p. 125437_1-7.

Research output: Contribution to journal › Article

Harvard

Rosales, D, Bretagnon, T, Gil, B, Kahouli, A, Brault, J, Damilano, B, Massies, J, Durnev, MV & Kavokin, AV 2013, 'Excitons in nitride heterostructures: From zero- to one-dimensional behavior', Physical Review B - Condensed Matter and Materials Physics, vol. 88, no. 12, pp. 125437_1-7. https://doi.org/10.1103/PhysRevB.88.125437

APA

Rosales, D., Bretagnon, T., Gil, B., Kahouli, A., Brault, J., Damilano, B., Massies, J., Durnev, M. V., & Kavokin, A. V. (2013). Excitons in nitride heterostructures: From zero- to one-dimensional behavior. Physical Review B - Condensed Matter and Materials Physics, 88(12), 125437_1-7. https://doi.org/10.1103/PhysRevB.88.125437

Vancouver

Rosales D, Bretagnon T, Gil B, Kahouli A, Brault J, Damilano B et al. Excitons in nitride heterostructures: From zero- to one-dimensional behavior. Physical Review B - Condensed Matter and Materials Physics. 2013;88(12):125437_1-7. https://doi.org/10.1103/PhysRevB.88.125437

Author

Rosales, D. ; Bretagnon, T. ; Gil, B. ; Kahouli, A. ; Brault, J. ; Damilano, B. ; Massies, J. ; Durnev, M.V. ; Kavokin, A.V. / Excitons in nitride heterostructures: From zero- to one-dimensional behavior. In: Physical Review B - Condensed Matter and Materials Physics. 2013 ; Vol. 88, No. 12. pp. 125437_1-7.

BibTeX

@article{4f917e8a6b514e2abf4ad2c349e0bf70,
title = "Excitons in nitride heterostructures: From zero- to one-dimensional behavior",
abstract = "We report an unusual temperature dependence of exciton lifetimes in arrays of GaN nanostructures grown on semipolar (11-22) oriented Al0.5Ga0.5N alloy by molecular beam epitaxy. Atomic force microscopy measurements revealed: (i) a one-dimensional ordering tendency along the [1-100] crystallographic direction together with (ii) an in-plane anisotropy of the nanostructure lateral shape with respect to [1-100] and [11-23] crystallographic axes. As a consequence, a morphological transition from dot-shaped islands forming an array of nanochains to wire-shaped objects elongated along the [1-100] direction was evidenced with the increase of the GaN deposited amount. Nanostructures of different dimensionality were fabricated including quantum dots (QDs), quantum wires (QWRs), and quantum wells (QWs), and the excitonic behavior was investigated as a function of the nanostructure shape. The measured temperature dependencies of the exciton radiative decay revealed its direct correlation with a spatial confinement, result",
author = "D. Rosales and T. Bretagnon and B. Gil and A. Kahouli and J. Brault and B. Damilano and J. Massies and M.V. Durnev and A.V. Kavokin",
year = "2013",
doi = "10.1103/PhysRevB.88.125437",
language = "English",
volume = "88",
pages = "125437_1--7",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "12",

}

RIS

TY - JOUR

T1 - Excitons in nitride heterostructures: From zero- to one-dimensional behavior

AU - Rosales, D.

AU - Bretagnon, T.

AU - Gil, B.

AU - Kahouli, A.

AU - Brault, J.

AU - Damilano, B.

AU - Massies, J.

AU - Durnev, M.V.

AU - Kavokin, A.V.

PY - 2013

Y1 - 2013

N2 - We report an unusual temperature dependence of exciton lifetimes in arrays of GaN nanostructures grown on semipolar (11-22) oriented Al0.5Ga0.5N alloy by molecular beam epitaxy. Atomic force microscopy measurements revealed: (i) a one-dimensional ordering tendency along the [1-100] crystallographic direction together with (ii) an in-plane anisotropy of the nanostructure lateral shape with respect to [1-100] and [11-23] crystallographic axes. As a consequence, a morphological transition from dot-shaped islands forming an array of nanochains to wire-shaped objects elongated along the [1-100] direction was evidenced with the increase of the GaN deposited amount. Nanostructures of different dimensionality were fabricated including quantum dots (QDs), quantum wires (QWRs), and quantum wells (QWs), and the excitonic behavior was investigated as a function of the nanostructure shape. The measured temperature dependencies of the exciton radiative decay revealed its direct correlation with a spatial confinement, result

AB - We report an unusual temperature dependence of exciton lifetimes in arrays of GaN nanostructures grown on semipolar (11-22) oriented Al0.5Ga0.5N alloy by molecular beam epitaxy. Atomic force microscopy measurements revealed: (i) a one-dimensional ordering tendency along the [1-100] crystallographic direction together with (ii) an in-plane anisotropy of the nanostructure lateral shape with respect to [1-100] and [11-23] crystallographic axes. As a consequence, a morphological transition from dot-shaped islands forming an array of nanochains to wire-shaped objects elongated along the [1-100] direction was evidenced with the increase of the GaN deposited amount. Nanostructures of different dimensionality were fabricated including quantum dots (QDs), quantum wires (QWRs), and quantum wells (QWs), and the excitonic behavior was investigated as a function of the nanostructure shape. The measured temperature dependencies of the exciton radiative decay revealed its direct correlation with a spatial confinement, result

U2 - 10.1103/PhysRevB.88.125437

DO - 10.1103/PhysRevB.88.125437

M3 - Article

VL - 88

SP - 125437_1-7

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 12

ER -

ID: 5685476