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Excitonic Probe for Characterization of High-Quality Quantum-Well Heterostructures. / Shapochkin, P. Yu.; Eliseev, S. A.; Lovtcius, V. A.; Efimov, Yu. P.; Grigoryev, P. S.; Khramtsov, E. S.; Ignatiev, I. V.

In: Physical Review Applied, Vol. 12, No. 3, 034034, 17.09.2019.

Research output: Contribution to journalArticlepeer-review

Harvard

Shapochkin, PY, Eliseev, SA, Lovtcius, VA, Efimov, YP, Grigoryev, PS, Khramtsov, ES & Ignatiev, IV 2019, 'Excitonic Probe for Characterization of High-Quality Quantum-Well Heterostructures', Physical Review Applied, vol. 12, no. 3, 034034. https://doi.org/10.1103/PhysRevApplied.12.034034

APA

Shapochkin, P. Y., Eliseev, S. A., Lovtcius, V. A., Efimov, Y. P., Grigoryev, P. S., Khramtsov, E. S., & Ignatiev, I. V. (2019). Excitonic Probe for Characterization of High-Quality Quantum-Well Heterostructures. Physical Review Applied, 12(3), [034034]. https://doi.org/10.1103/PhysRevApplied.12.034034

Vancouver

Shapochkin PY, Eliseev SA, Lovtcius VA, Efimov YP, Grigoryev PS, Khramtsov ES et al. Excitonic Probe for Characterization of High-Quality Quantum-Well Heterostructures. Physical Review Applied. 2019 Sep 17;12(3). 034034. https://doi.org/10.1103/PhysRevApplied.12.034034

Author

Shapochkin, P. Yu. ; Eliseev, S. A. ; Lovtcius, V. A. ; Efimov, Yu. P. ; Grigoryev, P. S. ; Khramtsov, E. S. ; Ignatiev, I. V. / Excitonic Probe for Characterization of High-Quality Quantum-Well Heterostructures. In: Physical Review Applied. 2019 ; Vol. 12, No. 3.

BibTeX

@article{6c46028f95ac4ad4a6b511385d7275b8,
title = "Excitonic Probe for Characterization of High-Quality Quantum-Well Heterostructures",
abstract = "High-quality GaAs/(Al,Ga)As heterostructures with quantum wells grown by molecular-beam-epitaxy technology are experimentally studied by means of optical spectroscopy of exciton states. The exciton resonances observed in the reflectance spectra are analyzed in the framework of phenomenological and microscopic models. The exciton energies, the radiative ({\^a}.,Γ0) and nonradiative ({\^a}.,Γ) broadening, and the phases of resonant reflection are obtained from the modeling for each exciton resonance. These parameters are used for careful analysis of the parameters and quality of the structures. Particular attention is paid to the exciton energies and phases, which are used to determine the quantum-well and barrier-layer thicknesses with high accuracy.",
keywords = "BINDING-ENERGY, SPECTROSCOPY, SHALLOW",
author = "Shapochkin, {P. Yu.} and Eliseev, {S. A.} and Lovtcius, {V. A.} and Efimov, {Yu. P.} and Grigoryev, {P. S.} and Khramtsov, {E. S.} and Ignatiev, {I. V.}",
year = "2019",
month = sep,
day = "17",
doi = "10.1103/PhysRevApplied.12.034034",
language = "English",
volume = "12",
journal = "Physical Review Applied",
issn = "2331-7019",
publisher = "American Physical Society",
number = "3",

}

RIS

TY - JOUR

T1 - Excitonic Probe for Characterization of High-Quality Quantum-Well Heterostructures

AU - Shapochkin, P. Yu.

AU - Eliseev, S. A.

AU - Lovtcius, V. A.

AU - Efimov, Yu. P.

AU - Grigoryev, P. S.

AU - Khramtsov, E. S.

AU - Ignatiev, I. V.

PY - 2019/9/17

Y1 - 2019/9/17

N2 - High-quality GaAs/(Al,Ga)As heterostructures with quantum wells grown by molecular-beam-epitaxy technology are experimentally studied by means of optical spectroscopy of exciton states. The exciton resonances observed in the reflectance spectra are analyzed in the framework of phenomenological and microscopic models. The exciton energies, the radiative (â.,Γ0) and nonradiative (â.,Γ) broadening, and the phases of resonant reflection are obtained from the modeling for each exciton resonance. These parameters are used for careful analysis of the parameters and quality of the structures. Particular attention is paid to the exciton energies and phases, which are used to determine the quantum-well and barrier-layer thicknesses with high accuracy.

AB - High-quality GaAs/(Al,Ga)As heterostructures with quantum wells grown by molecular-beam-epitaxy technology are experimentally studied by means of optical spectroscopy of exciton states. The exciton resonances observed in the reflectance spectra are analyzed in the framework of phenomenological and microscopic models. The exciton energies, the radiative (â.,Γ0) and nonradiative (â.,Γ) broadening, and the phases of resonant reflection are obtained from the modeling for each exciton resonance. These parameters are used for careful analysis of the parameters and quality of the structures. Particular attention is paid to the exciton energies and phases, which are used to determine the quantum-well and barrier-layer thicknesses with high accuracy.

KW - BINDING-ENERGY

KW - SPECTROSCOPY

KW - SHALLOW

UR - http://www.scopus.com/inward/record.url?scp=85072796480&partnerID=8YFLogxK

U2 - 10.1103/PhysRevApplied.12.034034

DO - 10.1103/PhysRevApplied.12.034034

M3 - Article

AN - SCOPUS:85072796480

VL - 12

JO - Physical Review Applied

JF - Physical Review Applied

SN - 2331-7019

IS - 3

M1 - 034034

ER -

ID: 49355921