Exciton spin decay modified by strong electron-hole exchange interaction

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Exciton spin decay modified by strong electron-hole exchange interaction. / Astakhov, G. V.; Koudinov, A. V.; Kavokin, K. V.; Gagis, I. S.; Kusrayev, Yu G.; Ossau, W.; Molenkamp, L. W.

In: Physical Review Letters, Vol. 99, No. 1, 016601, 03.07.2007.

Research output: Contribution to journal › Article › peer-review

Author

Astakhov, G. V. ; Koudinov, A. V. ; Kavokin, K. V. ; Gagis, I. S. ; Kusrayev, Yu G. ; Ossau, W. ; Molenkamp, L. W. / Exciton spin decay modified by strong electron-hole exchange interaction. In: Physical Review Letters. 2007 ; Vol. 99, No. 1.

BibTeX

@article{d3f3a2f00e1e424292fa5b24cc774758,

title = "Exciton spin decay modified by strong electron-hole exchange interaction",

abstract = "We study exciton spin decay in the regime of strong electron-hole exchange interaction, which occurs in a wide variety of semiconductor nanostructures. In this regime the electron spin precession is restricted within a sector formed by the external magnetic field and the effective exchange fields triggered by random spin flips of the hole. Using Hanle effect measurements, we demonstrate that this mechanism dominates our experiments in CdTe/(Cd,Mg)Te quantum wells. We present calculations that provide a consistent description of the experimental results, which is supported by independent measurements of the parameters entering the model.",

author = "Astakhov, {G. V.} and Koudinov, {A. V.} and Kavokin, {K. V.} and Gagis, {I. S.} and Kusrayev, {Yu G.} and W. Ossau and Molenkamp, {L. W.}",

year = "2007",

month = jul,

day = "3",

doi = "10.1103/PhysRevLett.99.016601",

language = "English",

volume = "99",

journal = "Physical Review Letters",

issn = "0031-9007",

publisher = "American Physical Society",

number = "1",

}

RIS

TY - JOUR

T1 - Exciton spin decay modified by strong electron-hole exchange interaction

AU - Astakhov, G. V.

AU - Koudinov, A. V.

AU - Kavokin, K. V.

AU - Gagis, I. S.

AU - Kusrayev, Yu G.

AU - Ossau, W.

AU - Molenkamp, L. W.

PY - 2007/7/3

Y1 - 2007/7/3

N2 - We study exciton spin decay in the regime of strong electron-hole exchange interaction, which occurs in a wide variety of semiconductor nanostructures. In this regime the electron spin precession is restricted within a sector formed by the external magnetic field and the effective exchange fields triggered by random spin flips of the hole. Using Hanle effect measurements, we demonstrate that this mechanism dominates our experiments in CdTe/(Cd,Mg)Te quantum wells. We present calculations that provide a consistent description of the experimental results, which is supported by independent measurements of the parameters entering the model.

AB - We study exciton spin decay in the regime of strong electron-hole exchange interaction, which occurs in a wide variety of semiconductor nanostructures. In this regime the electron spin precession is restricted within a sector formed by the external magnetic field and the effective exchange fields triggered by random spin flips of the hole. Using Hanle effect measurements, we demonstrate that this mechanism dominates our experiments in CdTe/(Cd,Mg)Te quantum wells. We present calculations that provide a consistent description of the experimental results, which is supported by independent measurements of the parameters entering the model.

UR - http://www.scopus.com/inward/record.url?scp=34547257224&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.99.016601

DO - 10.1103/PhysRevLett.99.016601

M3 - Article

AN - SCOPUS:34547257224

VL - 99

JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

IS - 1

M1 - 016601

ER -

ID: 39909715