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Exciton decay through plasmon modes in planar metal-semiconductor structures. / Durnev, M.; Kavokin, A.; Gil, B.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 87, No. 19, 2013, p. 195429_1-8.

Research output: Contribution to journalArticle

Harvard

Durnev, M, Kavokin, A & Gil, B 2013, 'Exciton decay through plasmon modes in planar metal-semiconductor structures', Physical Review B - Condensed Matter and Materials Physics, vol. 87, no. 19, pp. 195429_1-8. https://doi.org/10.1103/PhysRevB.87.195429

APA

Durnev, M., Kavokin, A., & Gil, B. (2013). Exciton decay through plasmon modes in planar metal-semiconductor structures. Physical Review B - Condensed Matter and Materials Physics, 87(19), 195429_1-8. https://doi.org/10.1103/PhysRevB.87.195429

Vancouver

Durnev M, Kavokin A, Gil B. Exciton decay through plasmon modes in planar metal-semiconductor structures. Physical Review B - Condensed Matter and Materials Physics. 2013;87(19):195429_1-8. https://doi.org/10.1103/PhysRevB.87.195429

Author

Durnev, M. ; Kavokin, A. ; Gil, B. / Exciton decay through plasmon modes in planar metal-semiconductor structures. In: Physical Review B - Condensed Matter and Materials Physics. 2013 ; Vol. 87, No. 19. pp. 195429_1-8.

BibTeX

@article{a96a93d397b84b24801887f05117825f,
title = "Exciton decay through plasmon modes in planar metal-semiconductor structures",
abstract = "We develop a nonlocal dielectric-response theory to describe the temperature dependence of exciton lifetime in metal-semiconductor heterostructures. Coupling between excitons and surface plasmons results in a strongly nonmonotonous behavior of exciton decay rate versus temperature, affected by surface plasmons on both sides of themetal layer. Unlike the photons, surface plasmons are not able to escape the sample; hence, the additional decay channel for excitons appears solely due to the plasmon scattering in metal and metal-dielectric interfaces. Tuning the plasmon frequency, one can control the exciton lifetime and under certain conditions emission efficiency.",
author = "M. Durnev and A. Kavokin and B. Gil",
year = "2013",
doi = "10.1103/PhysRevB.87.195429",
language = "English",
volume = "87",
pages = "195429_1--8",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "19",

}

RIS

TY - JOUR

T1 - Exciton decay through plasmon modes in planar metal-semiconductor structures

AU - Durnev, M.

AU - Kavokin, A.

AU - Gil, B.

PY - 2013

Y1 - 2013

N2 - We develop a nonlocal dielectric-response theory to describe the temperature dependence of exciton lifetime in metal-semiconductor heterostructures. Coupling between excitons and surface plasmons results in a strongly nonmonotonous behavior of exciton decay rate versus temperature, affected by surface plasmons on both sides of themetal layer. Unlike the photons, surface plasmons are not able to escape the sample; hence, the additional decay channel for excitons appears solely due to the plasmon scattering in metal and metal-dielectric interfaces. Tuning the plasmon frequency, one can control the exciton lifetime and under certain conditions emission efficiency.

AB - We develop a nonlocal dielectric-response theory to describe the temperature dependence of exciton lifetime in metal-semiconductor heterostructures. Coupling between excitons and surface plasmons results in a strongly nonmonotonous behavior of exciton decay rate versus temperature, affected by surface plasmons on both sides of themetal layer. Unlike the photons, surface plasmons are not able to escape the sample; hence, the additional decay channel for excitons appears solely due to the plasmon scattering in metal and metal-dielectric interfaces. Tuning the plasmon frequency, one can control the exciton lifetime and under certain conditions emission efficiency.

U2 - 10.1103/PhysRevB.87.195429

DO - 10.1103/PhysRevB.87.195429

M3 - Article

VL - 87

SP - 195429_1-8

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 19

ER -

ID: 5630859