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Etching of GaN layers at electrolysis under UV-irradiation. / Zubenko, T. K.; Puzyk, M. V.; Stozharov, V. M.; Ermakov, I. A.; Kovalev, D. S.; Ivanova, S. A.; Usikov, A. S.; Medvedev, O. S.; Papchenko, B. P.; Kurin, S. Yu; Antipov, A. A.; Chernyakov, A. E.

In: Journal of Physics: Conference Series, Vol. 741, No. 1, 012050, 15.09.2016.

Research output: Contribution to journal › Conference article › peer-review

Harvard

Zubenko, TK, Puzyk, MV, Stozharov, VM, Ermakov, IA, Kovalev, DS, Ivanova, SA, Usikov, AS, Medvedev, OS, Papchenko, BP, Kurin, SY, Antipov, AA & Chernyakov, AE 2016, 'Etching of GaN layers at electrolysis under UV-irradiation', Journal of Physics: Conference Series, vol. 741, no. 1, 012050. https://doi.org/10.1088/1742-6596/741/1/012050

APA

Zubenko, T. K., Puzyk, M. V., Stozharov, V. M., Ermakov, I. A., Kovalev, D. S., Ivanova, S. A., Usikov, A. S., Medvedev, O. S., Papchenko, B. P., Kurin, S. Y., Antipov, A. A., & Chernyakov, A. E. (2016). Etching of GaN layers at electrolysis under UV-irradiation. Journal of Physics: Conference Series, 741(1), [012050]. https://doi.org/10.1088/1742-6596/741/1/012050

Vancouver

Zubenko TK, Puzyk MV, Stozharov VM, Ermakov IA, Kovalev DS, Ivanova SA et al. Etching of GaN layers at electrolysis under UV-irradiation. Journal of Physics: Conference Series. 2016 Sep 15;741(1). 012050. https://doi.org/10.1088/1742-6596/741/1/012050

Author

Zubenko, T. K. ; Puzyk, M. V. ; Stozharov, V. M. ; Ermakov, I. A. ; Kovalev, D. S. ; Ivanova, S. A. ; Usikov, A. S. ; Medvedev, O. S. ; Papchenko, B. P. ; Kurin, S. Yu ; Antipov, A. A. ; Chernyakov, A. E. / Etching of GaN layers at electrolysis under UV-irradiation. In: Journal of Physics: Conference Series. 2016 ; Vol. 741, No. 1.

BibTeX

@article{49ec3a64cb1e4b7a9c00e7d9020a4e03,
title = "Etching of GaN layers at electrolysis under UV-irradiation",
abstract = "Etching of the GaN layers in 1M KOH aqua solution under irradiation was studied by the electro-stimulated photolysis using N2-laser (337 nm, 60 W/m2) as a light source. It was observed that the size and the depth of the failure monotonically depend on the optical power and the irradiation time of the N2 laser and the GaN layer type of conductivity. The GaN layers etching rate was evaluated. A mechanism of the failure in the n-GaN layers is discussed.",
author = "Zubenko, {T. K.} and Puzyk, {M. V.} and Stozharov, {V. M.} and Ermakov, {I. A.} and Kovalev, {D. S.} and Ivanova, {S. A.} and Usikov, {A. S.} and Medvedev, {O. S.} and Papchenko, {B. P.} and Kurin, {S. Yu} and Antipov, {A. A.} and Chernyakov, {A. E.}",
year = "2016",
month = sep,
day = "15",
doi = "10.1088/1742-6596/741/1/012050",
language = "English",
volume = "741",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",
note = "3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, Saint Petersburg OPEN 2016 ; Conference date: 28-03-2016 Through 30-03-2016",

}

RIS

TY - JOUR

T1 - Etching of GaN layers at electrolysis under UV-irradiation

AU - Zubenko, T. K.

AU - Puzyk, M. V.

AU - Stozharov, V. M.

AU - Ermakov, I. A.

AU - Kovalev, D. S.

AU - Ivanova, S. A.

AU - Usikov, A. S.

AU - Medvedev, O. S.

AU - Papchenko, B. P.

AU - Kurin, S. Yu

AU - Antipov, A. A.

AU - Chernyakov, A. E.

PY - 2016/9/15

Y1 - 2016/9/15

N2 - Etching of the GaN layers in 1M KOH aqua solution under irradiation was studied by the electro-stimulated photolysis using N2-laser (337 nm, 60 W/m2) as a light source. It was observed that the size and the depth of the failure monotonically depend on the optical power and the irradiation time of the N2 laser and the GaN layer type of conductivity. The GaN layers etching rate was evaluated. A mechanism of the failure in the n-GaN layers is discussed.

AB - Etching of the GaN layers in 1M KOH aqua solution under irradiation was studied by the electro-stimulated photolysis using N2-laser (337 nm, 60 W/m2) as a light source. It was observed that the size and the depth of the failure monotonically depend on the optical power and the irradiation time of the N2 laser and the GaN layer type of conductivity. The GaN layers etching rate was evaluated. A mechanism of the failure in the n-GaN layers is discussed.

UR - http://www.scopus.com/inward/record.url?scp=84989347569&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/741/1/012050

DO - 10.1088/1742-6596/741/1/012050

M3 - Conference article

AN - SCOPUS:84989347569

VL - 741

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012050

T2 - 3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, Saint Petersburg OPEN 2016

Y2 - 28 March 2016 through 30 March 2016

ER -

ID: 36387684