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EPR, ESE, and pulsed ENDOR study of the nitrogen donors in 15R SiC grown under carbon-rich conditions. / Savchenko, D.; Kalabukhova, E.; Shanina, B.; Pöppl, A.; Yukhymchuk, V.; Lan ok, J.; Ubyivovk, E.; Mokhov, E.

In: Physica Status Solidi (B): Basic Research, Vol. 252, No. 3, 2015, p. 566-572.

Research output: Contribution to journal › Article

Harvard

Savchenko, D, Kalabukhova, E, Shanina, B, Pöppl, A, Yukhymchuk, V, Lan ok, J, Ubyivovk, E & Mokhov, E 2015, 'EPR, ESE, and pulsed ENDOR study of the nitrogen donors in 15R SiC grown under carbon-rich conditions', Physica Status Solidi (B): Basic Research, vol. 252, no. 3, pp. 566-572. https://doi.org/10.1002/pssb.201451452

APA

Savchenko, D., Kalabukhova, E., Shanina, B., Pöppl, A., Yukhymchuk, V., Lan ok, J., Ubyivovk, E., & Mokhov, E. (2015). EPR, ESE, and pulsed ENDOR study of the nitrogen donors in 15R SiC grown under carbon-rich conditions. Physica Status Solidi (B): Basic Research, 252(3), 566-572. https://doi.org/10.1002/pssb.201451452

Vancouver

Savchenko D, Kalabukhova E, Shanina B, Pöppl A, Yukhymchuk V, Lan ok J et al. EPR, ESE, and pulsed ENDOR study of the nitrogen donors in 15R SiC grown under carbon-rich conditions. Physica Status Solidi (B): Basic Research. 2015;252(3):566-572. https://doi.org/10.1002/pssb.201451452

Author

Savchenko, D. ; Kalabukhova, E. ; Shanina, B. ; Pöppl, A. ; Yukhymchuk, V. ; Lan ok, J. ; Ubyivovk, E. ; Mokhov, E. / EPR, ESE, and pulsed ENDOR study of the nitrogen donors in 15R SiC grown under carbon-rich conditions. In: Physica Status Solidi (B): Basic Research. 2015 ; Vol. 252, No. 3. pp. 566-572.

BibTeX

@article{36691fc1245c45cf816283c2507ce8f0,
title = "EPR, ESE, and pulsed ENDOR study of the nitrogen donors in 15R SiC grown under carbon-rich conditions",
abstract = "X-band field-sweep electron spin echo and pulsed electron nuclear double resonance (ENDOR) spectroscopy were used to study n-type 15R SiC wafers grown under carbon (C)-rich conditions with the aim to verify the recently proposed concept that nitrogen (N) donors substitute both carbon (C) and silicon (Si) sites and may occupy nonequivalent positions at Si sites. It was found that besides the 14N ENDOR spectra of the C substituting quasicubic {"}k1{"}, {"}k2{"}, and {"}k3{"} positions five doublet lines due to 14N nuclei at other lattice positions were observed in the ENDOR spectrum of highly compensated C-rich n-type 15R SiC. Three of them with the hyperfine interaction (HFI) constants 34.66, 32.20, and 29.77MHz were attributed to the N donors substituting {"}k1{"}, {"}k2{"}, and {"}k3{"} positions at Si sites. Two other additional ENDOR spectra were explained by the presence of the C antisite (CSi) defects in C-rich 15R SiC, which leads to the formation of CSiNC complexes with donor levels close to the conduction-band minimum and is",
keywords = "15R SiC, ENDOR, Nitrogen donors, Stoichiometry",
author = "D. Savchenko and E. Kalabukhova and B. Shanina and A. P{\"o}ppl and V. Yukhymchuk and {Lan ok}, J. and E. Ubyivovk and E. Mokhov",
year = "2015",
doi = "10.1002/pssb.201451452",
language = "English",
volume = "252",
pages = "566--572",
journal = "Physica Status Solidi (B): Basic Research",
issn = "0370-1972",
publisher = "Wiley-Blackwell",
number = "3",

}

RIS

TY - JOUR

T1 - EPR, ESE, and pulsed ENDOR study of the nitrogen donors in 15R SiC grown under carbon-rich conditions

AU - Savchenko, D.

AU - Kalabukhova, E.

AU - Shanina, B.

AU - Pöppl, A.

AU - Yukhymchuk, V.

AU - Lan ok, J.

AU - Ubyivovk, E.

AU - Mokhov, E.

PY - 2015

Y1 - 2015

N2 - X-band field-sweep electron spin echo and pulsed electron nuclear double resonance (ENDOR) spectroscopy were used to study n-type 15R SiC wafers grown under carbon (C)-rich conditions with the aim to verify the recently proposed concept that nitrogen (N) donors substitute both carbon (C) and silicon (Si) sites and may occupy nonequivalent positions at Si sites. It was found that besides the 14N ENDOR spectra of the C substituting quasicubic "k1", "k2", and "k3" positions five doublet lines due to 14N nuclei at other lattice positions were observed in the ENDOR spectrum of highly compensated C-rich n-type 15R SiC. Three of them with the hyperfine interaction (HFI) constants 34.66, 32.20, and 29.77MHz were attributed to the N donors substituting "k1", "k2", and "k3" positions at Si sites. Two other additional ENDOR spectra were explained by the presence of the C antisite (CSi) defects in C-rich 15R SiC, which leads to the formation of CSiNC complexes with donor levels close to the conduction-band minimum and is

AB - X-band field-sweep electron spin echo and pulsed electron nuclear double resonance (ENDOR) spectroscopy were used to study n-type 15R SiC wafers grown under carbon (C)-rich conditions with the aim to verify the recently proposed concept that nitrogen (N) donors substitute both carbon (C) and silicon (Si) sites and may occupy nonequivalent positions at Si sites. It was found that besides the 14N ENDOR spectra of the C substituting quasicubic "k1", "k2", and "k3" positions five doublet lines due to 14N nuclei at other lattice positions were observed in the ENDOR spectrum of highly compensated C-rich n-type 15R SiC. Three of them with the hyperfine interaction (HFI) constants 34.66, 32.20, and 29.77MHz were attributed to the N donors substituting "k1", "k2", and "k3" positions at Si sites. Two other additional ENDOR spectra were explained by the presence of the C antisite (CSi) defects in C-rich 15R SiC, which leads to the formation of CSiNC complexes with donor levels close to the conduction-band minimum and is

KW - 15R SiC

KW - ENDOR

KW - Nitrogen donors

KW - Stoichiometry

U2 - 10.1002/pssb.201451452

DO - 10.1002/pssb.201451452

M3 - Article

VL - 252

SP - 566

EP - 572

JO - Physica Status Solidi (B): Basic Research

JF - Physica Status Solidi (B): Basic Research

SN - 0370-1972

IS - 3

ER -

ID: 3943259