TY - JOUR

T1 - Enhancement of IR emission from a dislocation network in Si due to an external bias voltage

AU - Yu, X.

AU - Vyvenko, O. F.

AU - Reiche, M.

AU - Kittler, M.

PY - 2007/9

Y1 - 2007/9

N2 - Si-based light emitters with efficient emission at 1.5 or 1.3 μm are required for on-chip optical interconnection for the ultra large scale integrated circuits in the future. In this paper, we have shown that dislocation networks in Si formed by direct wafer bonding emit a quartet of luminescence D-lines. The D-line spectrum can be tailored by the structure of the dislocation network. The D1 or D3, with a wavelength of 1.5 or 1.3 μm respectively, can be made dominating in the luminescence spectrum. An external bias voltage applied to the bonded interface can significantly enhance the luminescence intensity of D-lines.

AB - Si-based light emitters with efficient emission at 1.5 or 1.3 μm are required for on-chip optical interconnection for the ultra large scale integrated circuits in the future. In this paper, we have shown that dislocation networks in Si formed by direct wafer bonding emit a quartet of luminescence D-lines. The D-line spectrum can be tailored by the structure of the dislocation network. The D1 or D3, with a wavelength of 1.5 or 1.3 μm respectively, can be made dominating in the luminescence spectrum. An external bias voltage applied to the bonded interface can significantly enhance the luminescence intensity of D-lines.

KW - Cathodoluminescence

KW - D-line

KW - Deep levels

KW - Dislocation network

KW - Silicon

UR - http://www.scopus.com/inward/record.url?scp=34547652749&partnerID=8YFLogxK

U2 - 10.1016/j.msec.2006.06.025

DO - 10.1016/j.msec.2006.06.025

M3 - Article

AN - SCOPUS:34547652749

VL - 27

SP - 1026

EP - 1029

JO - Materials Science and Engineering C

JF - Materials Science and Engineering C

SN - 0928-4931

IS - 5-8 SPEC. ISS.

ER -