The results of studying the electronic states of the conduction band of ultrathin films of furan-
phenylene co-oligomer 1,4-bis(5-phenylfuran-2-yl)benzene and the results of analyzing the interfacial
potential barrier upon the formation of these films on the surfaces of (SiO2)n-Si and layer-by-layer deposited
ZnO are presented. The formation of a (8–10)-nm-thick co-oligomer film was investigated by total current
spectroscopy; the energy range from 5 to 20 eV above EF was analyzed. Furan-phenylene co-oligomer films
on the (SiO2)n-Si surface have a domain structure with a characteristic domain size of ~1 × 1 μm and surface
roughness within a domain of no more than 1 nm. The films on the ZnO surface have a granular structure
with a grain height of 40–50 nm.