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Electronic spectrum of Bi2Sr2CaCu2O8 near the Fermi level from results of numerical calculations and ultraviolet (8.43 eV) photoelectron spectroscopy. / Aprelev, A. M.; Lisachenko, A. A.

In: Technical Physics Letters, Vol. 24, No. 2, 01.01.1998, p. 112-114.

Research output: Contribution to journal › Article › peer-review

Harvard

Aprelev, AM & Lisachenko, AA 1998, 'Electronic spectrum of Bi2Sr2CaCu2O8 near the Fermi level from results of numerical calculations and ultraviolet (8.43 eV) photoelectron spectroscopy', Technical Physics Letters, vol. 24, no. 2, pp. 112-114. https://doi.org/10.1134/1.1262015

APA

Aprelev, A. M., & Lisachenko, A. A. (1998). Electronic spectrum of Bi2Sr2CaCu2O8 near the Fermi level from results of numerical calculations and ultraviolet (8.43 eV) photoelectron spectroscopy. Technical Physics Letters, 24(2), 112-114. https://doi.org/10.1134/1.1262015

Vancouver

Aprelev AM, Lisachenko AA. Electronic spectrum of Bi2Sr2CaCu2O8 near the Fermi level from results of numerical calculations and ultraviolet (8.43 eV) photoelectron spectroscopy. Technical Physics Letters. 1998 Jan 1;24(2):112-114. https://doi.org/10.1134/1.1262015

Author

Aprelev, A. M. ; Lisachenko, A. A. / Electronic spectrum of Bi2Sr2CaCu2O8 near the Fermi level from results of numerical calculations and ultraviolet (8.43 eV) photoelectron spectroscopy. In: Technical Physics Letters. 1998 ; Vol. 24, No. 2. pp. 112-114.

BibTeX

@article{7cf84057544546ed83a83ba2b2796ce5,
title = "Electronic spectrum of Bi2Sr2CaCu2O8 near the Fermi level from results of numerical calculations and ultraviolet (8.43 eV) photoelectron spectroscopy",
abstract = "The structure of the spectrum of the partial density of filled states of Bi2Sr2CaCu2O8 in the range Eb<4 eV, obtained by ultraviolet (hv= 8.43 eV) photoelectron spectroscopy was compared with that calculated by the strong coupling method. The results of the calculations agree with the experimental results in the range of binding energies 1<Eb<4 eV. Analysis of the evolution of the spectra under thermal and phototreatment in ultrahigh vacuum and in oxygen reveals that oxygen atoms from Cu-O planes possess the highest mobility in the lattice and the surface of the single crystal is formed by Bi-O planes.",
author = "Aprelev, {A. M.} and Lisachenko, {A. A.}",
year = "1998",
month = jan,
day = "1",
doi = "10.1134/1.1262015",
language = "English",
volume = "24",
pages = "112--114",
journal = "Technical Physics Letters",
issn = "1063-7850",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "2",

}

RIS

TY - JOUR

T1 - Electronic spectrum of Bi2Sr2CaCu2O8 near the Fermi level from results of numerical calculations and ultraviolet (8.43 eV) photoelectron spectroscopy

AU - Aprelev, A. M.

AU - Lisachenko, A. A.

PY - 1998/1/1

Y1 - 1998/1/1

N2 - The structure of the spectrum of the partial density of filled states of Bi2Sr2CaCu2O8 in the range Eb<4 eV, obtained by ultraviolet (hv= 8.43 eV) photoelectron spectroscopy was compared with that calculated by the strong coupling method. The results of the calculations agree with the experimental results in the range of binding energies 1<Eb<4 eV. Analysis of the evolution of the spectra under thermal and phototreatment in ultrahigh vacuum and in oxygen reveals that oxygen atoms from Cu-O planes possess the highest mobility in the lattice and the surface of the single crystal is formed by Bi-O planes.

AB - The structure of the spectrum of the partial density of filled states of Bi2Sr2CaCu2O8 in the range Eb<4 eV, obtained by ultraviolet (hv= 8.43 eV) photoelectron spectroscopy was compared with that calculated by the strong coupling method. The results of the calculations agree with the experimental results in the range of binding energies 1<Eb<4 eV. Analysis of the evolution of the spectra under thermal and phototreatment in ultrahigh vacuum and in oxygen reveals that oxygen atoms from Cu-O planes possess the highest mobility in the lattice and the surface of the single crystal is formed by Bi-O planes.

UR - http://www.scopus.com/inward/record.url?scp=0032390273&partnerID=8YFLogxK

U2 - 10.1134/1.1262015

DO - 10.1134/1.1262015

M3 - Article

AN - SCOPUS:0032390273

VL - 24

SP - 112

EP - 114

JO - Technical Physics Letters

JF - Technical Physics Letters

SN - 1063-7850

IS - 2

ER -

ID: 43496059