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Electronic properties of binary and mixed [RMNH] n (R=H,CH 3 , M=Al,Ga,In) oligomers. / Oranskaya, A. A.; Pomogaeva, A. V.; Timoshkin, A. Y.

4th International Congress in Advances in Applied Physics and Materials Science, APMAS 2014. ed. / Zehra Banu Bahsi; Mehmet Emre Okoz; Ahmet Yavuz Oral; Mehmet Ozer; Mehmet Sezer. American Institute of Physics, 2015. 020083 (AIP Conference Proceedings; Vol. 1653).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

Harvard

Oranskaya, AA, Pomogaeva, AV & Timoshkin, AY 2015, Electronic properties of binary and mixed [RMNH] n (R=H,CH 3 , M=Al,Ga,In) oligomers. in ZB Bahsi, ME Okoz, AY Oral, M Ozer & M Sezer (eds), 4th International Congress in Advances in Applied Physics and Materials Science, APMAS 2014., 020083, AIP Conference Proceedings, vol. 1653, American Institute of Physics, 4th International Congress in Advances in Applied Physics and Materials Science, APMAS 2014, Fethiye, Turkey, 24/04/14. https://doi.org/10.1063/1.4914274, https://doi.org/10.1063/1.4914274

APA

Oranskaya, A. A., Pomogaeva, A. V., & Timoshkin, A. Y. (2015). Electronic properties of binary and mixed [RMNH] n (R=H,CH 3 , M=Al,Ga,In) oligomers. In Z. B. Bahsi, M. E. Okoz, A. Y. Oral, M. Ozer, & M. Sezer (Eds.), 4th International Congress in Advances in Applied Physics and Materials Science, APMAS 2014 [020083] (AIP Conference Proceedings; Vol. 1653). American Institute of Physics. https://doi.org/10.1063/1.4914274, https://doi.org/10.1063/1.4914274

Vancouver

Oranskaya AA, Pomogaeva AV, Timoshkin AY. Electronic properties of binary and mixed [RMNH] n (R=H,CH 3 , M=Al,Ga,In) oligomers. In Bahsi ZB, Okoz ME, Oral AY, Ozer M, Sezer M, editors, 4th International Congress in Advances in Applied Physics and Materials Science, APMAS 2014. American Institute of Physics. 2015. 020083. (AIP Conference Proceedings). https://doi.org/10.1063/1.4914274, https://doi.org/10.1063/1.4914274

Author

Oranskaya, A. A. ; Pomogaeva, A. V. ; Timoshkin, A. Y. / Electronic properties of binary and mixed [RMNH] n (R=H,CH 3 , M=Al,Ga,In) oligomers. 4th International Congress in Advances in Applied Physics and Materials Science, APMAS 2014. editor / Zehra Banu Bahsi ; Mehmet Emre Okoz ; Ahmet Yavuz Oral ; Mehmet Ozer ; Mehmet Sezer. American Institute of Physics, 2015. (AIP Conference Proceedings).

BibTeX

@inproceedings{b18e1c24fa744f63933463426e6099c5,
title = "Electronic properties of binary and mixed [RMNH] n (R=H,CH 3 , M=Al,Ga,In) oligomers",
abstract = " Theoretical investigation of structural and electronic properties is presented for the rod-like oligomers R 3 -[MRNH] 3n -H 3 and [RMNH] n+1 (M=Ga,Al,In R=H,CH 3 ) of different lengths. Electronic structures of the oligomers with and without substitutions of Ga atoms with Al or In were studied at DFT level of theory. Clusters up to 8nm of length were considered. A type of terminal groups of the oligomers is found to have a dominant influence on their electronic properties. ",
keywords = "DFT, Electronic structure, oligomers",
author = "Oranskaya, {A. A.} and Pomogaeva, {A. V.} and Timoshkin, {A. Y.}",
note = "Publisher Copyright: {\textcopyright} 2015 AIP Publishing LLC. Copyright: Copyright 2019 Elsevier B.V., All rights reserved.; 4th International Congress in Advances in Applied Physics and Materials Science, APMAS 2014 ; Conference date: 24-04-2014 Through 27-04-2014",
year = "2015",
month = mar,
day = "30",
doi = "10.1063/1.4914274",
language = "English",
isbn = "9780735412958",
series = "AIP Conference Proceedings",
publisher = "American Institute of Physics",
editor = "Bahsi, {Zehra Banu} and Okoz, {Mehmet Emre} and Oral, {Ahmet Yavuz} and Mehmet Ozer and Mehmet Sezer",
booktitle = "4th International Congress in Advances in Applied Physics and Materials Science, APMAS 2014",
address = "United States",

}

RIS

TY - GEN

T1 - Electronic properties of binary and mixed [RMNH] n (R=H,CH 3 , M=Al,Ga,In) oligomers

AU - Oranskaya, A. A.

AU - Pomogaeva, A. V.

AU - Timoshkin, A. Y.

N1 - Publisher Copyright: © 2015 AIP Publishing LLC. Copyright: Copyright 2019 Elsevier B.V., All rights reserved.

PY - 2015/3/30

Y1 - 2015/3/30

N2 - Theoretical investigation of structural and electronic properties is presented for the rod-like oligomers R 3 -[MRNH] 3n -H 3 and [RMNH] n+1 (M=Ga,Al,In R=H,CH 3 ) of different lengths. Electronic structures of the oligomers with and without substitutions of Ga atoms with Al or In were studied at DFT level of theory. Clusters up to 8nm of length were considered. A type of terminal groups of the oligomers is found to have a dominant influence on their electronic properties.

AB - Theoretical investigation of structural and electronic properties is presented for the rod-like oligomers R 3 -[MRNH] 3n -H 3 and [RMNH] n+1 (M=Ga,Al,In R=H,CH 3 ) of different lengths. Electronic structures of the oligomers with and without substitutions of Ga atoms with Al or In were studied at DFT level of theory. Clusters up to 8nm of length were considered. A type of terminal groups of the oligomers is found to have a dominant influence on their electronic properties.

KW - DFT

KW - Electronic structure

KW - oligomers

UR - http://www.scopus.com/inward/record.url?scp=85063823134&partnerID=8YFLogxK

U2 - 10.1063/1.4914274

DO - 10.1063/1.4914274

M3 - Conference contribution

SN - 9780735412958

T3 - AIP Conference Proceedings

BT - 4th International Congress in Advances in Applied Physics and Materials Science, APMAS 2014

A2 - Bahsi, Zehra Banu

A2 - Okoz, Mehmet Emre

A2 - Oral, Ahmet Yavuz

A2 - Ozer, Mehmet

A2 - Sezer, Mehmet

PB - American Institute of Physics

T2 - 4th International Congress in Advances in Applied Physics and Materials Science, APMAS 2014

Y2 - 24 April 2014 through 27 April 2014

ER -

ID: 3921961