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Electronic charge distribution at interfaces between Cu-phthalocyanine films and semiconductor surfaces. / Komolov, AS; Moller, PJ.

In: Surface Science, Vol. 532, 10.06.2003, p. 1004-1010.

Research output: Contribution to journal › Article › peer-review

Harvard

Komolov, AS & Moller, PJ 2003, 'Electronic charge distribution at interfaces between Cu-phthalocyanine films and semiconductor surfaces', Surface Science, vol. 532, pp. 1004-1010. https://doi.org/10.1016/S0039-6028(03)00459-X

APA

Komolov, AS., & Moller, PJ. (2003). Electronic charge distribution at interfaces between Cu-phthalocyanine films and semiconductor surfaces. Surface Science, 532, 1004-1010. https://doi.org/10.1016/S0039-6028(03)00459-X

Vancouver

Komolov AS, Moller PJ. Electronic charge distribution at interfaces between Cu-phthalocyanine films and semiconductor surfaces. Surface Science. 2003 Jun 10;532:1004-1010. https://doi.org/10.1016/S0039-6028(03)00459-X

Author

Komolov, AS ; Moller, PJ. / Electronic charge distribution at interfaces between Cu-phthalocyanine films and semiconductor surfaces. In: Surface Science. 2003 ; Vol. 532. pp. 1004-1010.

BibTeX

@article{d7b3648f7f9841a2be39d57bddc88050,
title = "Electronic charge distribution at interfaces between Cu-phthalocyanine films and semiconductor surfaces",
abstract = "Total current electron spectroscopy (TCS) that uses a probing beam of low energy electrons was applied to study electronic charge transfer at interfaces between Cu-phthalocyanine (CuPc) films thermally deposited in situ onto ZnO, oxidized and crystalline silicon substrates. Analysis of the TCS data provided us also with new data on the density of unoccupied electron states (DOUS) of the CuPc films at 0-25 eV above E-F. A most significant electronic charge transfer from the CuPc film to SiO2/n-Si and n-Si(1 0 0) was observed and the polarization layer extended up to 10 nm into the CuPc film bulk. the electronic structure of the CuPc molecules on n-Si(1 0 0) and on ZnO(0 0 0 1) was perturbed within 1-2 nm of the deposit due to interaction with the substrates. Admission of O-2 and NO2 at 10(-5) Pa and 300 K resulted in a reversible decrease and increase of the film surface potential, respectively. Formation of TC peaks related to O-orbitals on the gas adsorption on the CuPc surface was also registered. (C) 2003 Elsevier Science B.V. All rights reserved.",
keywords = "surface electronic phenomena (work function, surface potential, surface states, etc.), electron-solid scattering and transmission - elastic, surface chemical reaction, semiconductor-semiconductor interfaces, silicon, silicon oxides, zinc oxide, COPPER-PHTHALOCYANINE, SPECTROSCOPY, MOLECULES, METAL, ADSORPTION, ALIGNMENT, DEVICES, LAYERS, ENERGY",
author = "AS Komolov and PJ Moller",
year = "2003",
month = jun,
day = "10",
doi = "10.1016/S0039-6028(03)00459-X",
language = "Английский",
volume = "532",
pages = "1004--1010",
journal = "Surface Science",
issn = "0039-6028",
publisher = "Elsevier",
note = "null ; Conference date: 24-06-2002 Through 28-06-2002",

}

RIS

TY - JOUR

T1 - Electronic charge distribution at interfaces between Cu-phthalocyanine films and semiconductor surfaces

AU - Komolov, AS

AU - Moller, PJ

PY - 2003/6/10

Y1 - 2003/6/10

N2 - Total current electron spectroscopy (TCS) that uses a probing beam of low energy electrons was applied to study electronic charge transfer at interfaces between Cu-phthalocyanine (CuPc) films thermally deposited in situ onto ZnO, oxidized and crystalline silicon substrates. Analysis of the TCS data provided us also with new data on the density of unoccupied electron states (DOUS) of the CuPc films at 0-25 eV above E-F. A most significant electronic charge transfer from the CuPc film to SiO2/n-Si and n-Si(1 0 0) was observed and the polarization layer extended up to 10 nm into the CuPc film bulk. the electronic structure of the CuPc molecules on n-Si(1 0 0) and on ZnO(0 0 0 1) was perturbed within 1-2 nm of the deposit due to interaction with the substrates. Admission of O-2 and NO2 at 10(-5) Pa and 300 K resulted in a reversible decrease and increase of the film surface potential, respectively. Formation of TC peaks related to O-orbitals on the gas adsorption on the CuPc surface was also registered. (C) 2003 Elsevier Science B.V. All rights reserved.

AB - Total current electron spectroscopy (TCS) that uses a probing beam of low energy electrons was applied to study electronic charge transfer at interfaces between Cu-phthalocyanine (CuPc) films thermally deposited in situ onto ZnO, oxidized and crystalline silicon substrates. Analysis of the TCS data provided us also with new data on the density of unoccupied electron states (DOUS) of the CuPc films at 0-25 eV above E-F. A most significant electronic charge transfer from the CuPc film to SiO2/n-Si and n-Si(1 0 0) was observed and the polarization layer extended up to 10 nm into the CuPc film bulk. the electronic structure of the CuPc molecules on n-Si(1 0 0) and on ZnO(0 0 0 1) was perturbed within 1-2 nm of the deposit due to interaction with the substrates. Admission of O-2 and NO2 at 10(-5) Pa and 300 K resulted in a reversible decrease and increase of the film surface potential, respectively. Formation of TC peaks related to O-orbitals on the gas adsorption on the CuPc surface was also registered. (C) 2003 Elsevier Science B.V. All rights reserved.

KW - surface electronic phenomena (work function

KW - surface potential, surface states, etc.)

KW - electron-solid scattering and transmission - elastic

KW - surface chemical reaction

KW - semiconductor-semiconductor interfaces

KW - silicon

KW - silicon oxides

KW - zinc oxide

KW - COPPER-PHTHALOCYANINE

KW - SPECTROSCOPY

KW - MOLECULES

KW - METAL

KW - ADSORPTION

KW - ALIGNMENT

KW - DEVICES

KW - LAYERS

KW - ENERGY

U2 - 10.1016/S0039-6028(03)00459-X

DO - 10.1016/S0039-6028(03)00459-X

M3 - статья

VL - 532

SP - 1004

EP - 1010

JO - Surface Science

JF - Surface Science

SN - 0039-6028

Y2 - 24 June 2002 through 28 June 2002

ER -

ID: 18881433