Electron Spin Relaxation and Resonant Cooling of Nuclear Spins in GaAs:Mn Structures

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Electron Spin Relaxation and Resonant Cooling of Nuclear Spins in GaAs:Mn Structures. / Evdokimov, A. E.; Kuznetsova, M. S.; Mikhailov, A. V.; Kavokin, K. V.; Dzhioev, R. I.

In: Semiconductors, 19.04.2021.

Research output: Contribution to journal › Article › peer-review

BibTeX

@article{de590493a96e47c79e36db72c781eca1,

title = "Electron Spin Relaxation and Resonant Cooling of Nuclear Spins in GaAs:Mn Structures",

abstract = "Abstract: The behavior of the electron spin relaxation time in bulk GaAs layers doped with Mn was studied experimentally. We investigated the dependence of the degree of circular polarization of photoluminescence in transverse and longitudinal magnetic fields. An increase in the relaxation time of the electron spin is found from 25 ns at low pumping power to 400 ns at the threshold pumping power. The effect of resonant cooling of the nuclear spin system by optically-oriented electron spins is demonstrated.",

keywords = "GaAs:Mn structures, spin relaxation of electrons, transverse and longitudinal magnetic fields",

author = "Evdokimov, {A. E.} and Kuznetsova, {M. S.} and Mikhailov, {A. V.} and Kavokin, {K. V.} and Dzhioev, {R. I.}",

note = "Publisher Copyright: {\textcopyright} 2021, Pleiades Publishing, Ltd.",

year = "2021",

month = apr,

day = "19",

doi = "10.1134/S1063782621090049",

language = "English",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "МАИК {"}Наука/Интерпериодика{"}",

}

RIS

TY - JOUR

T1 - Electron Spin Relaxation and Resonant Cooling of Nuclear Spins in GaAs:Mn Structures

AU - Evdokimov, A. E.

AU - Kuznetsova, M. S.

AU - Mikhailov, A. V.

AU - Kavokin, K. V.

AU - Dzhioev, R. I.

PY - 2021/4/19

Y1 - 2021/4/19

N2 - Abstract: The behavior of the electron spin relaxation time in bulk GaAs layers doped with Mn was studied experimentally. We investigated the dependence of the degree of circular polarization of photoluminescence in transverse and longitudinal magnetic fields. An increase in the relaxation time of the electron spin is found from 25 ns at low pumping power to 400 ns at the threshold pumping power. The effect of resonant cooling of the nuclear spin system by optically-oriented electron spins is demonstrated.

AB - Abstract: The behavior of the electron spin relaxation time in bulk GaAs layers doped with Mn was studied experimentally. We investigated the dependence of the degree of circular polarization of photoluminescence in transverse and longitudinal magnetic fields. An increase in the relaxation time of the electron spin is found from 25 ns at low pumping power to 400 ns at the threshold pumping power. The effect of resonant cooling of the nuclear spin system by optically-oriented electron spins is demonstrated.

KW - GaAs:Mn structures

KW - spin relaxation of electrons

KW - transverse and longitudinal magnetic fields

UR - http://www.scopus.com/inward/record.url?scp=85124715519&partnerID=8YFLogxK

U2 - 10.1134/S1063782621090049

DO - 10.1134/S1063782621090049

M3 - Article

AN - SCOPUS:85124715519

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

ER -

ID: 93273583