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Electromechanical Switch Based on InxGa1– xAs Nanowires. / Alekseev, P. A.; Sharov, V. A.; Dunaevskiy, M. S.; Cirlin, G. E.; Reznik, R. R.; Berkovits, V. L.

In: Semiconductors, Vol. 52, No. 14, 01.12.2018, p. 1833-1835.

Research output: Contribution to journal › Article › peer-review

Harvard

Alekseev, PA, Sharov, VA, Dunaevskiy, MS, Cirlin, GE, Reznik, RR & Berkovits, VL 2018, 'Electromechanical Switch Based on InxGa1– xAs Nanowires', Semiconductors, vol. 52, no. 14, pp. 1833-1835. https://doi.org/10.1134/S1063782618140026

APA

Alekseev, P. A., Sharov, V. A., Dunaevskiy, M. S., Cirlin, G. E., Reznik, R. R., & Berkovits, V. L. (2018). Electromechanical Switch Based on InxGa1– xAs Nanowires. Semiconductors, 52(14), 1833-1835. https://doi.org/10.1134/S1063782618140026

Vancouver

Alekseev PA, Sharov VA, Dunaevskiy MS, Cirlin GE, Reznik RR, Berkovits VL. Electromechanical Switch Based on InxGa1– xAs Nanowires. Semiconductors. 2018 Dec 1;52(14):1833-1835. https://doi.org/10.1134/S1063782618140026

Author

Alekseev, P. A. ; Sharov, V. A. ; Dunaevskiy, M. S. ; Cirlin, G. E. ; Reznik, R. R. ; Berkovits, V. L. / Electromechanical Switch Based on InxGa1– xAs Nanowires. In: Semiconductors. 2018 ; Vol. 52, No. 14. pp. 1833-1835.

BibTeX

@article{e5afa1b7131d458b96d62cc608a36635,
title = "Electromechanical Switch Based on InxGa1– xAs Nanowires",
abstract = "Abstract: Piezoresistance effect of the InxGa1 – xAs nanowires was studied by scanning probe microscopy. The effect was investigated by measuring of the I–V curves with simultaneous bending of the nanowire by the probe. A modulation of the conductivity of In0.85Ga0.15As NWs induced by a mechanical stress exceeding three orders of magnitude was observed. For the explanation a model based on the surface states is presented. Such an observation opens new ways for the design of electromechanical switches with record parameters.",
author = "Alekseev, {P. A.} and Sharov, {V. A.} and Dunaevskiy, {M. S.} and Cirlin, {G. E.} and Reznik, {R. R.} and Berkovits, {V. L.}",
note = "Publisher Copyright: {\textcopyright} 2018, Pleiades Publishing, Ltd.",
year = "2018",
month = dec,
day = "1",
doi = "10.1134/S1063782618140026",
language = "English",
volume = "52",
pages = "1833--1835",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "14",

}

RIS

TY - JOUR

T1 - Electromechanical Switch Based on InxGa1– xAs Nanowires

AU - Alekseev, P. A.

AU - Sharov, V. A.

AU - Dunaevskiy, M. S.

AU - Cirlin, G. E.

AU - Reznik, R. R.

AU - Berkovits, V. L.

N1 - Publisher Copyright: © 2018, Pleiades Publishing, Ltd.

PY - 2018/12/1

Y1 - 2018/12/1

N2 - Abstract: Piezoresistance effect of the InxGa1 – xAs nanowires was studied by scanning probe microscopy. The effect was investigated by measuring of the I–V curves with simultaneous bending of the nanowire by the probe. A modulation of the conductivity of In0.85Ga0.15As NWs induced by a mechanical stress exceeding three orders of magnitude was observed. For the explanation a model based on the surface states is presented. Such an observation opens new ways for the design of electromechanical switches with record parameters.

AB - Abstract: Piezoresistance effect of the InxGa1 – xAs nanowires was studied by scanning probe microscopy. The effect was investigated by measuring of the I–V curves with simultaneous bending of the nanowire by the probe. A modulation of the conductivity of In0.85Ga0.15As NWs induced by a mechanical stress exceeding three orders of magnitude was observed. For the explanation a model based on the surface states is presented. Such an observation opens new ways for the design of electromechanical switches with record parameters.

UR - http://www.scopus.com/inward/record.url?scp=85059465499&partnerID=8YFLogxK

U2 - 10.1134/S1063782618140026

DO - 10.1134/S1063782618140026

M3 - Article

AN - SCOPUS:85059465499

VL - 52

SP - 1833

EP - 1835

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 14

ER -

ID: 98507189