The electroluminescence of Si-SiO₂ structures subjected to sequential implantation with 130- and 60-keV silicon ions and 60-keV carbon ions into a silicon dioxide layer is investigated. It is found that implantation of the structures with silicon and carbon ions is responsible for the electroluminescence bands with maxima at energies of approximately 2.7 and 4.3 eV. It is assumed that these bands are associated with the formation of silylene centers. Postimplantation annealing leads to a decrease in the intensity of the observed electroluminescence bands and gives rise to a shoulder in the short-wavelength wing of the band with a maximum at 2.7 eV.