Standard

Electroluminescence in SiO2 layers in various structures. / Baraban, A. P.; Konorov, P. P.; Miloglyadova, L. V.; Troshikhin, A. G.

In: Physics of the Solid State, Vol. 46, No. 4, 01.04.2004, p. 770-774.

Research output: Contribution to journal › Article › peer-review

Harvard

Baraban, AP, Konorov, PP, Miloglyadova, LV & Troshikhin, AG 2004, 'Electroluminescence in SiO2 layers in various structures', Physics of the Solid State, vol. 46, no. 4, pp. 770-774. https://doi.org/10.1134/1.1711472

APA

Baraban, A. P., Konorov, P. P., Miloglyadova, L. V., & Troshikhin, A. G. (2004). Electroluminescence in SiO2 layers in various structures. Physics of the Solid State, 46(4), 770-774. https://doi.org/10.1134/1.1711472

Vancouver

Baraban AP, Konorov PP, Miloglyadova LV, Troshikhin AG. Electroluminescence in SiO2 layers in various structures. Physics of the Solid State. 2004 Apr 1;46(4):770-774. https://doi.org/10.1134/1.1711472

Author

Baraban, A. P. ; Konorov, P. P. ; Miloglyadova, L. V. ; Troshikhin, A. G. / Electroluminescence in SiO2 layers in various structures. In: Physics of the Solid State. 2004 ; Vol. 46, No. 4. pp. 770-774.

BibTeX

@article{023ad0f0345d4c7b8340476fca3fad1f,
title = "Electroluminescence in SiO2 layers in various structures",
abstract = "Electroluminescence (EL) in an electrolyte-insulator-semiconductor system is used to study oxide layers in Si-SiO2-Si3N4 and Si-SiO2 structures prepared using various techniques. The EL spectra of all the structures contained the 2.7-eV emission band characteristic of the radiative relaxation of excited sililene centers. A comparative study of the conditions conducive to the formation of such luminescence centers in various structures containing SiO2 layers was made, and their nature was refined.",
author = "Baraban, {A. P.} and Konorov, {P. P.} and Miloglyadova, {L. V.} and Troshikhin, {A. G.}",
year = "2004",
month = apr,
day = "1",
doi = "10.1134/1.1711472",
language = "English",
volume = "46",
pages = "770--774",
journal = "Physics of the Solid State",
issn = "1063-7834",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "4",

}

RIS

TY - JOUR

T1 - Electroluminescence in SiO2 layers in various structures

AU - Baraban, A. P.

AU - Konorov, P. P.

AU - Miloglyadova, L. V.

AU - Troshikhin, A. G.

PY - 2004/4/1

Y1 - 2004/4/1

N2 - Electroluminescence (EL) in an electrolyte-insulator-semiconductor system is used to study oxide layers in Si-SiO2-Si3N4 and Si-SiO2 structures prepared using various techniques. The EL spectra of all the structures contained the 2.7-eV emission band characteristic of the radiative relaxation of excited sililene centers. A comparative study of the conditions conducive to the formation of such luminescence centers in various structures containing SiO2 layers was made, and their nature was refined.

AB - Electroluminescence (EL) in an electrolyte-insulator-semiconductor system is used to study oxide layers in Si-SiO2-Si3N4 and Si-SiO2 structures prepared using various techniques. The EL spectra of all the structures contained the 2.7-eV emission band characteristic of the radiative relaxation of excited sililene centers. A comparative study of the conditions conducive to the formation of such luminescence centers in various structures containing SiO2 layers was made, and their nature was refined.

UR - http://www.scopus.com/inward/record.url?scp=2442443897&partnerID=8YFLogxK

U2 - 10.1134/1.1711472

DO - 10.1134/1.1711472

M3 - Article

AN - SCOPUS:2442443897

VL - 46

SP - 770

EP - 774

JO - Physics of the Solid State

JF - Physics of the Solid State

SN - 1063-7834

IS - 4

ER -

ID: 41086099