Standard

Electroluminescence evaluation of the SiO2-Si structures using an electrolyte-SiO2-Si cell. / Baraban, A. P.; Konorov, P. P.; Bota, S. A.; Morante, J. R.

Materials Research Society Symposium Proceedings. ed. / M.A. Tischler; R.T. Collins; M.L.W. Thewalt; G. Abstreiter. Materials Research Society, 1993. p. 253-258 (Materials Research Society Symposium Proceedings; Vol. 298).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

Harvard

Baraban, AP, Konorov, PP, Bota, SA & Morante, JR 1993, Electroluminescence evaluation of the SiO2-Si structures using an electrolyte-SiO2-Si cell. in MA Tischler, RT Collins, MLW Thewalt & G Abstreiter (eds), Materials Research Society Symposium Proceedings. Materials Research Society Symposium Proceedings, vol. 298, Materials Research Society, pp. 253-258, Proceedings of the Symposium on Silicon-Based Optoelectronic Materials, San Francisco, CA, USA, 12/04/93.

APA

Baraban, A. P., Konorov, P. P., Bota, S. A., & Morante, J. R. (1993). Electroluminescence evaluation of the SiO2-Si structures using an electrolyte-SiO2-Si cell. In M. A. Tischler, R. T. Collins, M. L. W. Thewalt, & G. Abstreiter (Eds.), Materials Research Society Symposium Proceedings (pp. 253-258). (Materials Research Society Symposium Proceedings; Vol. 298). Materials Research Society.

Vancouver

Baraban AP, Konorov PP, Bota SA, Morante JR. Electroluminescence evaluation of the SiO2-Si structures using an electrolyte-SiO2-Si cell. In Tischler MA, Collins RT, Thewalt MLW, Abstreiter G, editors, Materials Research Society Symposium Proceedings. Materials Research Society. 1993. p. 253-258. (Materials Research Society Symposium Proceedings).

Author

Baraban, A. P. ; Konorov, P. P. ; Bota, S. A. ; Morante, J. R. / Electroluminescence evaluation of the SiO2-Si structures using an electrolyte-SiO2-Si cell. Materials Research Society Symposium Proceedings. editor / M.A. Tischler ; R.T. Collins ; M.L.W. Thewalt ; G. Abstreiter. Materials Research Society, 1993. pp. 253-258 (Materials Research Society Symposium Proceedings).

BibTeX

@inproceedings{8a09a2a9f018460a86fad46d539379f3,
title = "Electroluminescence evaluation of the SiO2-Si structures using an electrolyte-SiO2-Si cell",
abstract = "The use of an Electrolyte-SiO2-Si system allows a detailed control of the electron injection from the electrolyte into SiO2 layer, and makes feasible to reach the electron heating in the conduction band of SiO2 before to take place the irreversible breakdown. The injected and heated electrons enhanced the probability of the SiO2 defect excitation as well as the Si-O bond breaking. Both features give raise to the relaxation processes which are responsible of the electroluminescence characteristics of the oxide. So, the measured electroluminescence spectrum presents straightforward information on the defect types, their nature and possible precursor defect behaviour. Results on silicon oxides obtained from different technological processes and treatments, corroborate the above analysis and show the electro-luminescence of SiO2 as an interesting and powerful method to evaluate the SiO2 properties.",
author = "Baraban, {A. P.} and Konorov, {P. P.} and Bota, {S. A.} and Morante, {J. R.}",
year = "1993",
month = dec,
day = "1",
language = "English",
isbn = "1558991948",
series = "Materials Research Society Symposium Proceedings",
publisher = "Materials Research Society",
pages = "253--258",
editor = "M.A. Tischler and R.T. Collins and M.L.W. Thewalt and G. Abstreiter",
booktitle = "Materials Research Society Symposium Proceedings",
address = "United States",
note = "Proceedings of the Symposium on Silicon-Based Optoelectronic Materials ; Conference date: 12-04-1993 Through 14-04-1993",

}

RIS

TY - GEN

T1 - Electroluminescence evaluation of the SiO2-Si structures using an electrolyte-SiO2-Si cell

AU - Baraban, A. P.

AU - Konorov, P. P.

AU - Bota, S. A.

AU - Morante, J. R.

PY - 1993/12/1

Y1 - 1993/12/1

N2 - The use of an Electrolyte-SiO2-Si system allows a detailed control of the electron injection from the electrolyte into SiO2 layer, and makes feasible to reach the electron heating in the conduction band of SiO2 before to take place the irreversible breakdown. The injected and heated electrons enhanced the probability of the SiO2 defect excitation as well as the Si-O bond breaking. Both features give raise to the relaxation processes which are responsible of the electroluminescence characteristics of the oxide. So, the measured electroluminescence spectrum presents straightforward information on the defect types, their nature and possible precursor defect behaviour. Results on silicon oxides obtained from different technological processes and treatments, corroborate the above analysis and show the electro-luminescence of SiO2 as an interesting and powerful method to evaluate the SiO2 properties.

AB - The use of an Electrolyte-SiO2-Si system allows a detailed control of the electron injection from the electrolyte into SiO2 layer, and makes feasible to reach the electron heating in the conduction band of SiO2 before to take place the irreversible breakdown. The injected and heated electrons enhanced the probability of the SiO2 defect excitation as well as the Si-O bond breaking. Both features give raise to the relaxation processes which are responsible of the electroluminescence characteristics of the oxide. So, the measured electroluminescence spectrum presents straightforward information on the defect types, their nature and possible precursor defect behaviour. Results on silicon oxides obtained from different technological processes and treatments, corroborate the above analysis and show the electro-luminescence of SiO2 as an interesting and powerful method to evaluate the SiO2 properties.

UR - http://www.scopus.com/inward/record.url?scp=0027849022&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0027849022

SN - 1558991948

T3 - Materials Research Society Symposium Proceedings

SP - 253

EP - 258

BT - Materials Research Society Symposium Proceedings

A2 - Tischler, M.A.

A2 - Collins, R.T.

A2 - Thewalt, M.L.W.

A2 - Abstreiter, G.

PB - Materials Research Society

T2 - Proceedings of the Symposium on Silicon-Based Optoelectronic Materials

Y2 - 12 April 1993 through 14 April 1993

ER -

ID: 47620756