Standard

Electroluminescence analysis of the structural damage created in SiO2/Si systems by Ar ion implantation. / Bota, S.; Garrido, B.; Morante, J. R.; Baraban, A.; Konorov, P. P.

In: Solid-State Electronics, Vol. 39, No. 3, 01.01.1996, p. 355-359.

Research output: Contribution to journal › Article › peer-review

Harvard

Bota, S, Garrido, B, Morante, JR, Baraban, A & Konorov, PP 1996, 'Electroluminescence analysis of the structural damage created in SiO2/Si systems by Ar ion implantation', Solid-State Electronics, vol. 39, no. 3, pp. 355-359. https://doi.org/10.1016/0038-1101(95)00137-9

APA

Bota, S., Garrido, B., Morante, J. R., Baraban, A., & Konorov, P. P. (1996). Electroluminescence analysis of the structural damage created in SiO2/Si systems by Ar ion implantation. Solid-State Electronics, 39(3), 355-359. https://doi.org/10.1016/0038-1101(95)00137-9

Vancouver

Bota S, Garrido B, Morante JR, Baraban A, Konorov PP. Electroluminescence analysis of the structural damage created in SiO2/Si systems by Ar ion implantation. Solid-State Electronics. 1996 Jan 1;39(3):355-359. https://doi.org/10.1016/0038-1101(95)00137-9

Author

Bota, S. ; Garrido, B. ; Morante, J. R. ; Baraban, A. ; Konorov, P. P. / Electroluminescence analysis of the structural damage created in SiO2/Si systems by Ar ion implantation. In: Solid-State Electronics. 1996 ; Vol. 39, No. 3. pp. 355-359.

BibTeX

@article{f9ac8eb69c464c7aa6d8e6afe630c8ec,
title = "Electroluminescence analysis of the structural damage created in SiO2/Si systems by Ar ion implantation",
abstract = "The influence of ion implantation of Ar in defect generation in Si/SiO2 structures is examined by the application of an electroluminescence technique. The nature of the electroluminescence spectra is examined and bands at 1.9, 2.7 and 4.3 eV are identified. Each band is related to different intrinsic defects in the oxide. Structural analysis of the irradiated SiO2 films, performed with i.r. spectroscopy, points to atomic displacements and broken Si-O bonds as the origin of the damage induced by the irradiation.",
author = "S. Bota and B. Garrido and Morante, {J. R.} and A. Baraban and Konorov, {P. P.}",
year = "1996",
month = jan,
day = "1",
doi = "10.1016/0038-1101(95)00137-9",
language = "English",
volume = "39",
pages = "355--359",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier",
number = "3",

}

RIS

TY - JOUR

T1 - Electroluminescence analysis of the structural damage created in SiO2/Si systems by Ar ion implantation

AU - Bota, S.

AU - Garrido, B.

AU - Morante, J. R.

AU - Baraban, A.

AU - Konorov, P. P.

PY - 1996/1/1

Y1 - 1996/1/1

N2 - The influence of ion implantation of Ar in defect generation in Si/SiO2 structures is examined by the application of an electroluminescence technique. The nature of the electroluminescence spectra is examined and bands at 1.9, 2.7 and 4.3 eV are identified. Each band is related to different intrinsic defects in the oxide. Structural analysis of the irradiated SiO2 films, performed with i.r. spectroscopy, points to atomic displacements and broken Si-O bonds as the origin of the damage induced by the irradiation.

AB - The influence of ion implantation of Ar in defect generation in Si/SiO2 structures is examined by the application of an electroluminescence technique. The nature of the electroluminescence spectra is examined and bands at 1.9, 2.7 and 4.3 eV are identified. Each band is related to different intrinsic defects in the oxide. Structural analysis of the irradiated SiO2 films, performed with i.r. spectroscopy, points to atomic displacements and broken Si-O bonds as the origin of the damage induced by the irradiation.

UR - http://www.scopus.com/inward/record.url?scp=0030103705&partnerID=8YFLogxK

U2 - 10.1016/0038-1101(95)00137-9

DO - 10.1016/0038-1101(95)00137-9

M3 - Article

AN - SCOPUS:0030103705

VL - 39

SP - 355

EP - 359

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 3

ER -

ID: 47620605