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Electrical and morphological properties of CdTe films synthesized by the method of molecular deposition. / Mayorov, V. A.; Yafaysov, A. M.; Bogevolnov, V. B.; Radanstev, V. F.

In: Semiconductors, Vol. 44, No. 5, 2010, p. 564-567.

Research output: Contribution to journal › Article › peer-review

Harvard

Mayorov, VA, Yafaysov, AM, Bogevolnov, VB & Radanstev, VF 2010, 'Electrical and morphological properties of CdTe films synthesized by the method of molecular deposition', Semiconductors, vol. 44, no. 5, pp. 564-567. https://doi.org/10.1134/S1063782610050039

APA

Mayorov, V. A., Yafaysov, A. M., Bogevolnov, V. B., & Radanstev, V. F. (2010). Electrical and morphological properties of CdTe films synthesized by the method of molecular deposition. Semiconductors, 44(5), 564-567. https://doi.org/10.1134/S1063782610050039

Vancouver

Mayorov VA, Yafaysov AM, Bogevolnov VB, Radanstev VF. Electrical and morphological properties of CdTe films synthesized by the method of molecular deposition. Semiconductors. 2010;44(5):564-567. https://doi.org/10.1134/S1063782610050039

Author

Mayorov, V. A. ; Yafaysov, A. M. ; Bogevolnov, V. B. ; Radanstev, V. F. / Electrical and morphological properties of CdTe films synthesized by the method of molecular deposition. In: Semiconductors. 2010 ; Vol. 44, No. 5. pp. 564-567.

BibTeX

@article{0cd5b82e13ee400c9ab6c4e5a5e3d711,
title = "Electrical and morphological properties of CdTe films synthesized by the method of molecular deposition",
abstract = "Films of cadmium telluride are synthesized by molecular deposition on the substrates made of graphite, mica, and Si. Homogeneous photosensitive layers with the area 65 cm2 and thickness from 0. 5 to 5 μm and hole concentration of 6. 3 × 1016 cm-3 (300 K) are obtained.",
author = "Mayorov, {V. A.} and Yafaysov, {A. M.} and Bogevolnov, {V. B.} and Radanstev, {V. F.}",
note = "Copyright: Copyright 2010 Elsevier B.V., All rights reserved.",
year = "2010",
doi = "10.1134/S1063782610050039",
language = "English",
volume = "44",
pages = "564--567",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "5",

}

RIS

TY - JOUR

T1 - Electrical and morphological properties of CdTe films synthesized by the method of molecular deposition

AU - Mayorov, V. A.

AU - Yafaysov, A. M.

AU - Bogevolnov, V. B.

AU - Radanstev, V. F.

N1 - Copyright: Copyright 2010 Elsevier B.V., All rights reserved.

PY - 2010

Y1 - 2010

N2 - Films of cadmium telluride are synthesized by molecular deposition on the substrates made of graphite, mica, and Si. Homogeneous photosensitive layers with the area 65 cm2 and thickness from 0. 5 to 5 μm and hole concentration of 6. 3 × 1016 cm-3 (300 K) are obtained.

AB - Films of cadmium telluride are synthesized by molecular deposition on the substrates made of graphite, mica, and Si. Homogeneous photosensitive layers with the area 65 cm2 and thickness from 0. 5 to 5 μm and hole concentration of 6. 3 × 1016 cm-3 (300 K) are obtained.

UR - http://www.scopus.com/inward/record.url?scp=77952408003&partnerID=8YFLogxK

U2 - 10.1134/S1063782610050039

DO - 10.1134/S1063782610050039

M3 - Article

AN - SCOPUS:77952408003

VL - 44

SP - 564

EP - 567

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 5

ER -

ID: 77319561