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Effect of thermal annealing on the hyperfine interaction in InAs/GaAs quantum dots. / Petrov, M. Yu.; Ignatiev, I. V.; Poltavtsev, S. V.; Greilich, A.; Bauschulte, A.; Yakovlev, D. R.; Bayer, M.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 78, No. 4, 2008, p. 045315_1-9.

Research output: Contribution to journal › Article

Harvard

Petrov, MY, Ignatiev, IV, Poltavtsev, SV, Greilich, A, Bauschulte, A, Yakovlev, DR & Bayer, M 2008, 'Effect of thermal annealing on the hyperfine interaction in InAs/GaAs quantum dots', Physical Review B - Condensed Matter and Materials Physics, vol. 78, no. 4, pp. 045315_1-9. https://doi.org/10.1103/PhysRevB.78.045315

APA

Petrov, M. Y., Ignatiev, I. V., Poltavtsev, S. V., Greilich, A., Bauschulte, A., Yakovlev, D. R., & Bayer, M. (2008). Effect of thermal annealing on the hyperfine interaction in InAs/GaAs quantum dots. Physical Review B - Condensed Matter and Materials Physics, 78(4), 045315_1-9. https://doi.org/10.1103/PhysRevB.78.045315

Vancouver

Petrov MY, Ignatiev IV, Poltavtsev SV, Greilich A, Bauschulte A, Yakovlev DR et al. Effect of thermal annealing on the hyperfine interaction in InAs/GaAs quantum dots. Physical Review B - Condensed Matter and Materials Physics. 2008;78(4):045315_1-9. https://doi.org/10.1103/PhysRevB.78.045315

Author

Petrov, M. Yu. ; Ignatiev, I. V. ; Poltavtsev, S. V. ; Greilich, A. ; Bauschulte, A. ; Yakovlev, D. R. ; Bayer, M. / Effect of thermal annealing on the hyperfine interaction in InAs/GaAs quantum dots. In: Physical Review B - Condensed Matter and Materials Physics. 2008 ; Vol. 78, No. 4. pp. 045315_1-9.

BibTeX

@article{bdd6605b60974426a4c8682dccdc049d,
title = "Effect of thermal annealing on the hyperfine interaction in InAs/GaAs quantum dots",
abstract = "The hyperfine interaction of an electron with the unpolarized nuclei in thermally annealed self-assembled InAs/GaAs quantum dots (QDs) is theoretically analyzed. For this purpose, the thermal annealing process of the quantum dots is numerically modeled to obtain the nuclear composition as well as the electron ground state in the QDs. To check the reliability of calculations, the ground-state excitonic transition energies are compared with photoluminescence data from a set of annealed dots. From these results, the electron localization volume and the partial contributions of the In, Ga, and As nuclei to the hyperfine interaction are calculated as functions of annealing temperature. The contribution of the indium nuclei to the hyperfine interaction dominates up to high temperatures of the annealing (Ta =980°C), for which the In content in the dots does not exceed 25%. Simulations of the effect of the nuclear-spin fluctuations on the electron-spin polarization decay are in good agreement with the experiment.",
author = "Petrov, {M. Yu.} and Ignatiev, {I. V.} and Poltavtsev, {S. V.} and A. Greilich and A. Bauschulte and Yakovlev, {D. R.} and M. Bayer",
year = "2008",
doi = "10.1103/PhysRevB.78.045315",
language = "English",
volume = "78",
pages = "045315_1--9",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "4",

}

RIS

TY - JOUR

T1 - Effect of thermal annealing on the hyperfine interaction in InAs/GaAs quantum dots

AU - Petrov, M. Yu.

AU - Ignatiev, I. V.

AU - Poltavtsev, S. V.

AU - Greilich, A.

AU - Bauschulte, A.

AU - Yakovlev, D. R.

AU - Bayer, M.

PY - 2008

Y1 - 2008

N2 - The hyperfine interaction of an electron with the unpolarized nuclei in thermally annealed self-assembled InAs/GaAs quantum dots (QDs) is theoretically analyzed. For this purpose, the thermal annealing process of the quantum dots is numerically modeled to obtain the nuclear composition as well as the electron ground state in the QDs. To check the reliability of calculations, the ground-state excitonic transition energies are compared with photoluminescence data from a set of annealed dots. From these results, the electron localization volume and the partial contributions of the In, Ga, and As nuclei to the hyperfine interaction are calculated as functions of annealing temperature. The contribution of the indium nuclei to the hyperfine interaction dominates up to high temperatures of the annealing (Ta =980°C), for which the In content in the dots does not exceed 25%. Simulations of the effect of the nuclear-spin fluctuations on the electron-spin polarization decay are in good agreement with the experiment.

AB - The hyperfine interaction of an electron with the unpolarized nuclei in thermally annealed self-assembled InAs/GaAs quantum dots (QDs) is theoretically analyzed. For this purpose, the thermal annealing process of the quantum dots is numerically modeled to obtain the nuclear composition as well as the electron ground state in the QDs. To check the reliability of calculations, the ground-state excitonic transition energies are compared with photoluminescence data from a set of annealed dots. From these results, the electron localization volume and the partial contributions of the In, Ga, and As nuclei to the hyperfine interaction are calculated as functions of annealing temperature. The contribution of the indium nuclei to the hyperfine interaction dominates up to high temperatures of the annealing (Ta =980°C), for which the In content in the dots does not exceed 25%. Simulations of the effect of the nuclear-spin fluctuations on the electron-spin polarization decay are in good agreement with the experiment.

U2 - 10.1103/PhysRevB.78.045315

DO - 10.1103/PhysRevB.78.045315

M3 - Article

VL - 78

SP - 045315_1-9

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 4

ER -

ID: 5048529