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Effect of nanobridges on emission spectra of the quantum dot−quantum well tunneling pair. / Talalaev, V.G.; Cirlin, G.E.; Goray, L.I.; Novikov, B.V.; Labzovskaya, M.E.; Tomm, J.W.; Werner, P.; Fuhrmann, B.; Schilling, J.; Racec, P.N.

In: Semiconductors, Vol. 48, No. 9, 2014, p. 1178-1184.

Research output: Contribution to journal › Article

Harvard

Talalaev, VG, Cirlin, GE, Goray, LI, Novikov, BV, Labzovskaya, ME, Tomm, JW, Werner, P, Fuhrmann, B, Schilling, J & Racec, PN 2014, 'Effect of nanobridges on emission spectra of the quantum dot−quantum well tunneling pair', Semiconductors, vol. 48, no. 9, pp. 1178-1184. https://doi.org/10.1134/S1063782614090218

APA

Talalaev, V. G., Cirlin, G. E., Goray, L. I., Novikov, B. V., Labzovskaya, M. E., Tomm, J. W., Werner, P., Fuhrmann, B., Schilling, J., & Racec, P. N. (2014). Effect of nanobridges on emission spectra of the quantum dot−quantum well tunneling pair. Semiconductors, 48(9), 1178-1184. https://doi.org/10.1134/S1063782614090218

Vancouver

Talalaev VG, Cirlin GE, Goray LI, Novikov BV, Labzovskaya ME, Tomm JW et al. Effect of nanobridges on emission spectra of the quantum dot−quantum well tunneling pair. Semiconductors. 2014;48(9):1178-1184. https://doi.org/10.1134/S1063782614090218

Author

Talalaev, V.G. ; Cirlin, G.E. ; Goray, L.I. ; Novikov, B.V. ; Labzovskaya, M.E. ; Tomm, J.W. ; Werner, P. ; Fuhrmann, B. ; Schilling, J. ; Racec, P.N. / Effect of nanobridges on emission spectra of the quantum dot−quantum well tunneling pair. In: Semiconductors. 2014 ; Vol. 48, No. 9. pp. 1178-1184.

BibTeX

@article{3f8734cad66e46bfad61a867bf72c35e,
title = "Effect of nanobridges on emission spectra of the quantum dot−quantum well tunneling pair",
abstract = "Emission in the narrow spectral range 950-1000 nm is obtained at the nanobridge optical transition involving experimentally and theoretically observed hybrid states in the InGaAs system, i.e., quantum dot-nanobridge-quantum well. It is experimentally shown that the oscillator strength of the new transition sharply increases in the built-in electric field of a pin junction. In the mode of weak currents in the system under study, the nanobridge transition is the dominant electroluminescence channel. At current densities >10 A cm2, nanobridge {"}burning{"} is observed, after which the system becomes a {"}quasi-classical{"} quantum dot-quantum well tunneling pair separated by a barrier. {\textcopyright} 2014 Pleiades Publishing, Ltd.",
author = "V.G. Talalaev and G.E. Cirlin and L.I. Goray and B.V. Novikov and M.E. Labzovskaya and J.W. Tomm and P. Werner and B. Fuhrmann and J. Schilling and P.N. Racec",
year = "2014",
doi = "10.1134/S1063782614090218",
language = "English",
volume = "48",
pages = "1178--1184",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "9",

}

RIS

TY - JOUR

T1 - Effect of nanobridges on emission spectra of the quantum dot−quantum well tunneling pair

AU - Talalaev, V.G.

AU - Cirlin, G.E.

AU - Goray, L.I.

AU - Novikov, B.V.

AU - Labzovskaya, M.E.

AU - Tomm, J.W.

AU - Werner, P.

AU - Fuhrmann, B.

AU - Schilling, J.

AU - Racec, P.N.

PY - 2014

Y1 - 2014

N2 - Emission in the narrow spectral range 950-1000 nm is obtained at the nanobridge optical transition involving experimentally and theoretically observed hybrid states in the InGaAs system, i.e., quantum dot-nanobridge-quantum well. It is experimentally shown that the oscillator strength of the new transition sharply increases in the built-in electric field of a pin junction. In the mode of weak currents in the system under study, the nanobridge transition is the dominant electroluminescence channel. At current densities >10 A cm2, nanobridge "burning" is observed, after which the system becomes a "quasi-classical" quantum dot-quantum well tunneling pair separated by a barrier. © 2014 Pleiades Publishing, Ltd.

AB - Emission in the narrow spectral range 950-1000 nm is obtained at the nanobridge optical transition involving experimentally and theoretically observed hybrid states in the InGaAs system, i.e., quantum dot-nanobridge-quantum well. It is experimentally shown that the oscillator strength of the new transition sharply increases in the built-in electric field of a pin junction. In the mode of weak currents in the system under study, the nanobridge transition is the dominant electroluminescence channel. At current densities >10 A cm2, nanobridge "burning" is observed, after which the system becomes a "quasi-classical" quantum dot-quantum well tunneling pair separated by a barrier. © 2014 Pleiades Publishing, Ltd.

U2 - 10.1134/S1063782614090218

DO - 10.1134/S1063782614090218

M3 - Article

VL - 48

SP - 1178

EP - 1184

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 9

ER -

ID: 5745597