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Effect of irradiation by He+ and Ga+ ions on the 2D-exciton susceptibility of InGaAs/GaAs quantum-well structures. / Kapitonov, Yu. V.; Shapochkin, P. Yu.; Petrov, Yu. V.; Efimov, Yu. P.; Eliseev, S. A.; Dolgikh, Yu. K.; Petrov, V. V.; Ovsyankin, V. V.

In: Physica Status Solidi (B): Basic Research, Vol. 252, No. 9, 2015, p. 1950-1954.

Research output: Contribution to journal › Article

Harvard

Kapitonov, YV, Shapochkin, PY, Petrov, YV, Efimov, YP, Eliseev, SA, Dolgikh, YK, Petrov, VV & Ovsyankin, VV 2015, 'Effect of irradiation by He+ and Ga+ ions on the 2D-exciton susceptibility of InGaAs/GaAs quantum-well structures', Physica Status Solidi (B): Basic Research, vol. 252, no. 9, pp. 1950-1954. https://doi.org/10.1002/pssb.201451611

APA

Kapitonov, Y. V., Shapochkin, P. Y., Petrov, Y. V., Efimov, Y. P., Eliseev, S. A., Dolgikh, Y. K., Petrov, V. V., & Ovsyankin, V. V. (2015). Effect of irradiation by He+ and Ga+ ions on the 2D-exciton susceptibility of InGaAs/GaAs quantum-well structures. Physica Status Solidi (B): Basic Research, 252(9), 1950-1954. https://doi.org/10.1002/pssb.201451611

Vancouver

Kapitonov YV, Shapochkin PY, Petrov YV, Efimov YP, Eliseev SA, Dolgikh YK et al. Effect of irradiation by He+ and Ga+ ions on the 2D-exciton susceptibility of InGaAs/GaAs quantum-well structures. Physica Status Solidi (B): Basic Research. 2015;252(9):1950-1954. https://doi.org/10.1002/pssb.201451611

Author

Kapitonov, Yu. V. ; Shapochkin, P. Yu. ; Petrov, Yu. V. ; Efimov, Yu. P. ; Eliseev, S. A. ; Dolgikh, Yu. K. ; Petrov, V. V. ; Ovsyankin, V. V. / Effect of irradiation by He+ and Ga+ ions on the 2D-exciton susceptibility of InGaAs/GaAs quantum-well structures. In: Physica Status Solidi (B): Basic Research. 2015 ; Vol. 252, No. 9. pp. 1950-1954.

BibTeX

@article{c6d0a09c4e104825bfacddecc85ebd1b,
title = "Effect of irradiation by He+ and Ga+ ions on the 2D-exciton susceptibility of InGaAs/GaAs quantum-well structures",
abstract = "The effect of irradiation by 30-keV Ga+ and 35-keV He+ ions (in relatively small doses) on the excitonic reflectivity spectra of single InGaAs/GaAs quantum-well structures is studied. It is found that the irradiation results in decreasing intensity and broadening of the excitonic resonances in the reflectivity spectra for all the doses. It is shown that these changes are not related to a decrease of the exciton transition oscillator strength and, therefore, to the irradiation-induced destruction of the excitonic states, but can be rather ascribed to a common cause, namely, to inhomogeneous broadening of the excitonic resonances proportional to the exposure dose. A tentative model of the irradiation-induced broadening is considered, with the mechanism of the process being a consequence of scattering of the 2D excitons by structural defects associated with Ga(In) and As vacancies arising upon collisions of the high-energy ions with regular atoms of the crystal structure. The model is used to compare experimenta",
author = "Kapitonov, {Yu. V.} and Shapochkin, {P. Yu.} and Petrov, {Yu. V.} and Efimov, {Yu. P.} and Eliseev, {S. A.} and Dolgikh, {Yu. K.} and Petrov, {V. V.} and Ovsyankin, {V. V.}",
year = "2015",
doi = "10.1002/pssb.201451611",
language = "English",
volume = "252",
pages = "1950--1954",
journal = "Physica Status Solidi (B): Basic Research",
issn = "0370-1972",
publisher = "Wiley-Blackwell",
number = "9",

}

RIS

TY - JOUR

T1 - Effect of irradiation by He+ and Ga+ ions on the 2D-exciton susceptibility of InGaAs/GaAs quantum-well structures

AU - Kapitonov, Yu. V.

AU - Shapochkin, P. Yu.

AU - Petrov, Yu. V.

AU - Efimov, Yu. P.

AU - Eliseev, S. A.

AU - Dolgikh, Yu. K.

AU - Petrov, V. V.

AU - Ovsyankin, V. V.

PY - 2015

Y1 - 2015

N2 - The effect of irradiation by 30-keV Ga+ and 35-keV He+ ions (in relatively small doses) on the excitonic reflectivity spectra of single InGaAs/GaAs quantum-well structures is studied. It is found that the irradiation results in decreasing intensity and broadening of the excitonic resonances in the reflectivity spectra for all the doses. It is shown that these changes are not related to a decrease of the exciton transition oscillator strength and, therefore, to the irradiation-induced destruction of the excitonic states, but can be rather ascribed to a common cause, namely, to inhomogeneous broadening of the excitonic resonances proportional to the exposure dose. A tentative model of the irradiation-induced broadening is considered, with the mechanism of the process being a consequence of scattering of the 2D excitons by structural defects associated with Ga(In) and As vacancies arising upon collisions of the high-energy ions with regular atoms of the crystal structure. The model is used to compare experimenta

AB - The effect of irradiation by 30-keV Ga+ and 35-keV He+ ions (in relatively small doses) on the excitonic reflectivity spectra of single InGaAs/GaAs quantum-well structures is studied. It is found that the irradiation results in decreasing intensity and broadening of the excitonic resonances in the reflectivity spectra for all the doses. It is shown that these changes are not related to a decrease of the exciton transition oscillator strength and, therefore, to the irradiation-induced destruction of the excitonic states, but can be rather ascribed to a common cause, namely, to inhomogeneous broadening of the excitonic resonances proportional to the exposure dose. A tentative model of the irradiation-induced broadening is considered, with the mechanism of the process being a consequence of scattering of the 2D excitons by structural defects associated with Ga(In) and As vacancies arising upon collisions of the high-energy ions with regular atoms of the crystal structure. The model is used to compare experimenta

U2 - 10.1002/pssb.201451611

DO - 10.1002/pssb.201451611

M3 - Article

VL - 252

SP - 1950

EP - 1954

JO - Physica Status Solidi (B): Basic Research

JF - Physica Status Solidi (B): Basic Research

SN - 0370-1972

IS - 9

ER -

ID: 3948781