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Effect of helium ion beam treatment on wet etching of silicon dioxide. / Petrov, Yu.V.; Grigoryev, E.A.; Sharov, T.V.; Baraban, A.P.

In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol. 418, 01.03.2018, p. 94-100.

Research output: Contribution to journal › Article › peer-review

Harvard

Petrov, YV, Grigoryev, EA, Sharov, TV & Baraban, AP 2018, 'Effect of helium ion beam treatment on wet etching of silicon dioxide', NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, vol. 418, pp. 94-100. https://doi.org/10.1016/j.nimb.2018.01.011

APA

Petrov, Y. V., Grigoryev, E. A., Sharov, T. V., & Baraban, A. P. (2018). Effect of helium ion beam treatment on wet etching of silicon dioxide. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 418, 94-100. https://doi.org/10.1016/j.nimb.2018.01.011

Vancouver

Petrov YV, Grigoryev EA, Sharov TV, Baraban AP. Effect of helium ion beam treatment on wet etching of silicon dioxide. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS. 2018 Mar 1;418:94-100. https://doi.org/10.1016/j.nimb.2018.01.011

Author

Petrov, Yu.V. ; Grigoryev, E.A. ; Sharov, T.V. ; Baraban, A.P. / Effect of helium ion beam treatment on wet etching of silicon dioxide. In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS. 2018 ; Vol. 418. pp. 94-100.

BibTeX

@article{7da8484393ed421d9a3196feca9b2339,
title = "Effect of helium ion beam treatment on wet etching of silicon dioxide",
abstract = "We investigated the effect of helium ion beam treatment on the etching rate of silicon dioxide in a water based solution of hydrofluoric acid. A 460-nm-thick silicon dioxide film on silicon was irradiated with helium ions having energies of 20 keV and 30 keV with ion fluences ranging from 10 14 cm −2 to 10 17 cm −2. The dependence of the etching rate on depth was obtained and compared with the depth distribution of ion-induced defects, which was obtained from numerical simulation. Irradiation with helium ions results in an increase of the etching rate of silicon dioxide. The dependence of the etching rate on the calculated concentration of ion-induced defects is described. ",
keywords = "Helium ion microscope, Ion beam enhanced etching, Radiation-induced defects, Silicon dioxide, MECHANISM, AMORPHOUS SIO2, MICROSCOPY, NITRIDE, DAMAGE, RATES, IMPLANTATION, SIO2-FILMS, FOCUSED HELIUM, HF",
author = "Yu.V. Petrov and E.A. Grigoryev and T.V. Sharov and A.P. Baraban",
year = "2018",
month = mar,
day = "1",
doi = "10.1016/j.nimb.2018.01.011",
language = "English",
volume = "418",
pages = "94--100",
journal = "NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS",
issn = "0168-583X",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Effect of helium ion beam treatment on wet etching of silicon dioxide

AU - Petrov, Yu.V.

AU - Grigoryev, E.A.

AU - Sharov, T.V.

AU - Baraban, A.P.

PY - 2018/3/1

Y1 - 2018/3/1

N2 - We investigated the effect of helium ion beam treatment on the etching rate of silicon dioxide in a water based solution of hydrofluoric acid. A 460-nm-thick silicon dioxide film on silicon was irradiated with helium ions having energies of 20 keV and 30 keV with ion fluences ranging from 10 14 cm −2 to 10 17 cm −2. The dependence of the etching rate on depth was obtained and compared with the depth distribution of ion-induced defects, which was obtained from numerical simulation. Irradiation with helium ions results in an increase of the etching rate of silicon dioxide. The dependence of the etching rate on the calculated concentration of ion-induced defects is described.

AB - We investigated the effect of helium ion beam treatment on the etching rate of silicon dioxide in a water based solution of hydrofluoric acid. A 460-nm-thick silicon dioxide film on silicon was irradiated with helium ions having energies of 20 keV and 30 keV with ion fluences ranging from 10 14 cm −2 to 10 17 cm −2. The dependence of the etching rate on depth was obtained and compared with the depth distribution of ion-induced defects, which was obtained from numerical simulation. Irradiation with helium ions results in an increase of the etching rate of silicon dioxide. The dependence of the etching rate on the calculated concentration of ion-induced defects is described.

KW - Helium ion microscope

KW - Ion beam enhanced etching

KW - Radiation-induced defects

KW - Silicon dioxide

KW - MECHANISM

KW - AMORPHOUS SIO2

KW - MICROSCOPY

KW - NITRIDE

KW - DAMAGE

KW - RATES

KW - IMPLANTATION

KW - SIO2-FILMS

KW - FOCUSED HELIUM

KW - HF

UR - http://www.scopus.com/inward/record.url?scp=85041284475&partnerID=8YFLogxK

U2 - 10.1016/j.nimb.2018.01.011

DO - 10.1016/j.nimb.2018.01.011

M3 - Article

VL - 418

SP - 94

EP - 100

JO - NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

JF - NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

SN - 0168-583X

ER -

ID: 33285664